Method for producing a buried layer of material in another material
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
H01L-021/00
H01L-021/84
H01L-021/76
출원번호
US-0806511
(1999-10-13)
우선권정보
FR-1998-812950 (1998-10-15)
국제출원번호
PCT/FR99/02476
(1999-10-13)
국제공개번호
WO00/22669
(2000-04-20)
발명자
/ 주소
Aspar, Bernard
Bruel, Michel
Moriceau, Hubert
출원인 / 주소
Commissariat a l'Energie Atomique
대리인 / 주소
Oblon, Spivak, McClelland, Maier & Neustadt, P.C.
인용정보
피인용 횟수 :
13인용 특허 :
6
초록▼
The aim of the invention is a method for producing a layer ( 2 ) of a first material embedded in a substrate ( 1 ) comprising at least one second material. The method comprises the following stages: formation in the substrate ( 1 ), at the level of the desired embedded layer, of a layer of mi
The aim of the invention is a method for producing a layer ( 2 ) of a first material embedded in a substrate ( 1 ) comprising at least one second material. The method comprises the following stages: formation in the substrate ( 1 ), at the level of the desired embedded layer, of a layer of microcavities intended to serve as centers of nucleation to produce said first material in said second material, formation of precipitate embryos from the nucleation centers formed, the precipitate embryos corresponding to the first material, growth of the precipitates from the embryos through species concentration corresponding to the first material and carried to the microcavity layer.
대표청구항▼
1. A method for producing a layer made of a first material buried in a substrate made of a second material, said substrate providing species able to combine with the second material to form the first material, the method comprising the following stages:formation in said substrate, at the level of th
1. A method for producing a layer made of a first material buried in a substrate made of a second material, said substrate providing species able to combine with the second material to form the first material, the method comprising the following stages:formation in said substrate, at the level of the desired buried layer, and by a method excluding the formation of a porous layer, of a layer of microcavities intended to serve as centers of nucleation and volume accommodation,formation of precipitate embryos of the first material from the nucleation centers,growth of the precipitates of the first material from the embryos by concentration of said species introduced into the substrate in order to obtain said layer made of the first material. 2. The method according to claim 1, in which the layer of microcavities is formed by introducing gaseous species into the second material. 3. The method according to claim 2, in which the gaseous species used to form the layer of microcavities are chosen from among hydrogen, helium and fluorine. 4. The method according to claim 1, in which the layer of microcavities is formed by an inclusion of gas provoked during formation of the substrate. 5. The method according to claim 1, in which the layer of microcavities is formed from the interface constituted by the solidarization of a first substrate element and a second substrate element, providing said substrate. 6. The method according to claim 5, in which the layer of microcavities results from the presence of particles at said interface. 7. The method according to claim 5, in which the layer of microcavities results from the surface roughness of at least one element among the first substrate element and the second substrate element. 8. The method according to claim 5, in which the layer of microcavities results from the presence of micro-recesses at the surface of at least one element among the first substrate element and the second substrate element. 9. The method according to claim 5, in which the layer of microcavities results from stresses induced at said interface. 10. The method according to claim 1, in which the precipitate embryos are formed from species present in the second material. 11. The method according to claim 1, in which the precipitate embryos are formed from species introduced into the second material. 12. The method according to claim 11, in which said introduction is carried out by thermally activated diffusion. 13. The method according to claim 12, in which, the formation of microcavities implementing a thermal treatment, the precipitate embryos are formed simultaneously with the microcavities. 14. The method according to claim 1, in which the growth of the precipitates is produced by concentration of species introduced into the substrate by thermally activated diffusion. 15. The method according to claim 1, in which the growth of the precipitates is produced by concentration of species introduced under pressure into the substrate. 16. The method according to claim 1, in which the growth of the precipitates is produced by concentration of species introduced into the substrate by means of a plasma. 17. The method according to claim 1, in which the growth of the precipitates is produced by concentration of species present in the substrate, under the effect of a thermal treatment. 18. The method according to claim 1, in which the formations of precipitate embryos and the growth of precipitates being two operations requiring a thermal treatment, these operations are carried out simultaneously. 19. The method according to claim 1, in which the layer of microcavities is formed in a semiconductor substrate. 20. The method according to claim 19, in which the substrate is silicon and the buried layer is a layer of silicon oxide.
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이 특허에 인용된 특허 (6)
Bruel Michel,FRX ; Aspar Bernard,FRX, Method for achieving a thin film of solid material and applications of this method.
Letertre, Fabrice, Methods of fabricating semiconductor structures and devices using glass bonding layers, and semiconductor structures and devices formed by such methods.
Arena, Chantal, Methods of fabricating semiconductor structures or devices using layers of semiconductor material having selected or controlled lattice parameters.
Arena, Chantal, Methods of fabricating semiconductor structures or devices using layers of semiconductor material having selected or controlled lattice parameters.
Sadaka, Mariam; Aspar, Bernard; Blanchard, Chrystelle Lagahe, Methods of forming semiconductor structures including MEMS devices and integrated circuits on opposing sides of substrates, and related structures and devices.
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