초록 ▼

A circuit is arranged to provide a thermal shutdown signal in response to an overtemperature condition. The thermal shutdown circuit is typically implemented in the same die as the circuitry that is to be protected. The thermal shutdown circuit provides a first current in response to a change in tem

A circuit is arranged to provide a thermal shutdown signal in response to an overtemperature condition. The thermal shutdown circuit is typically implemented in the same die as the circuitry that is to be protected. The thermal shutdown circuit provides a first current in response to a change in temperature when a VBE associated with a transistor decreases below a predetermined level. The first current is mirrored to provide a scaled current. A thermal shutdown signal is activated when the scaled current becomes greater than a reference current. The first current is increased in response to the activated thermal shutdown signal such that the thermal shutdown circuit is deactivated at a temperature that is lower than the temperature at which the circuit is activated. The thermal shutdown circuit is deactivated when the temperature of the die decreases.

대표청구항 ▼

1. A circuit for detecting when a temperature exceeds a temperature threshold, comprising:a temperature sensor that includes a control terminal that is coupled to a reference voltage, wherein the temperature sensor is configured to provide a VBE that varies inversely with temperature;a resistive cir

1. A circuit for detecting when a temperature exceeds a temperature threshold, comprising:a temperature sensor that includes a control terminal that is coupled to a reference voltage, wherein the temperature sensor is configured to provide a VBE that varies inversely with temperature;a resistive circuit that is coupled to a noncontrol terminal of the temperature sensor, wherein the resistive circuit is arranged to select the temperature threshold;a current source that is arranged to source a fixed current to a sense node;a current mirror that is arranged to sink the fixed current from the sense node in response to the selected temperature threshold; anda detector that is arranged to provide an output signal in response to a voltage at the sense node. 2. The circuit of claim 1, wherein the temperature sensor comprises an NPN device, wherein the NPN device has a collector that is coupled to the reference voltage and wherein the NPN device has an emitter that is coupled to the resistive circuit and wherein the NPN device has a base that is coupled to the reference voltage. 3. The circuit of claim 1, wherein the reference voltage is a bandgap voltage. 4. The circuit of claim 1 wherein the resistive circuit is arranged to select between at least one of two resistance levels in response to a feedback signal from an output of the detector. 5. The circuit of claim 1 further comprising a switching circuit that is arranged to bypass a resistive element in the resistive circuit such an overall resistance associated with the resistive circuit is decreased, whereby the temperature threshold is reduced. 6. The circuit of claim 1 wherein the current mirror comprises a pair of bipolar transistors that are configured to operate as the current mirror. 7. The circuit of claim 1 wherein the detector is an inverter circuit. 8. The circuit of claim 1 wherein the current mirror is arranged to provide a load impedance that is less than a source impedance provided by the current source when the temperature exceeds a predetermined level. 9. The circuit of claim 1 wherein the circuit substantially draws no current when the reference voltage is less than the sum of a VBE of the temperature sensor and a VBE of a first transistor in the current mirror, wherein the first transistor has a base and a collector that are coupled to the resistive circuit. 10. A circuit for detecting when a temperature exceeds a temperature threshold, comprising:means for initiating a first current from the temperature sensor when the VBE of the temperature sensor decreases below a predetermined level, wherein the predetermined level is determined by the reference signal;means for coupling the first current through a resistive circuit such that the resistive circuit determines the temperature threshold;means for coupling the first current to a current mirror;means for sinking a second current, wherein the second current is related to the first current by the current mirror;means for sourcing a source current to a sense node; andmeans for detecting a change in voltage at the sense node when the source current is absorbed by the current mirror. 11. The circuit of claim 10, further comprising means for selecting between at least one of two resistive levels of the resistive circuit in response to the detection of the change of the sense node voltage. 12. The circuit of claim 10, further comprising a switching circuit to bypass a resistive element in a resistive circuit whereby the overall resistance of the resistive circuit is lowered and whereby the temperature threshold is reduced. 13. The circuit of claim 10, wherein the current mirror comprises bipolar transistors. 14. The circuit of claim 10, wherein the temperature sensor comprises an NPN device. 15. A method for detecting when a temperature exceeds a temperature threshold, comprising:applying a reference signal to a control terminal of a temperature sensor, wherein the temperature sensor has an associated VBE that has a negat ive temperature coefficient;initiating a first current from the temperature sensor when the VBE of the temperature sensor decreases below a predetermined level, wherein the predetermined level is determined by the reference signal;coupling the first current through a resistive circuit such that the resistive circuit determines the temperature threshold;coupling the first current to a current mirror;sinking a second current, wherein the second current is related to the first current by the current mirror;sourcing a source current to a sense node; anddetecting a change in voltage at the sense node when the source current is absorbed by the current mirror. 16. The method of claim 15, further comprising selecting between at least one of two resistive levels of the resistive circuit in response to the detection of the change of the sense node voltage. 17. The method of claim 16, further comprising using a switching circuit to bypass a resistive element in the resistive circuit whereby the overall resistance of the resistive circuit is lowered and whereby the temperature threshold is reduced. 18. The method of claim 15, further comprising using bipolar transistors in the current mirror. 19. The method of claim 15, further comprising using an inverter for the detector. 20. The method of claim 15, further comprising using an NPN device for the temperature sensor. 21. A circuit for detecting when a temperature exceeds a temperature threshold, comprising:a temperature sensor that includes a control terminal that is coupled to a reference voltage, wherein the temperature sensor is configured to provide a VBE that varies inversely with temperature;a resistive circuit that is coupled to a noncontrol terminal of the temperature sensor, wherein the resistive circuit is arranged to select the temperature threshold;a current source that is arranged to source a fixed current to a sense node such that the current source does not source current during normal operating conditions, wherein the normal operating conditions include operating at a temperature that is below the temperature threshold;a current mirror that is arranged to sink the fixed current from the sense node in response to the selected temperature threshold; anda detector that is arranged to provide an output signal in response to a voltage at the sense node. 22. The circuit of claim 21, wherein the current mirror is further arranged to neither source nor sink current during the normal operating conditions.