IPC분류정보
국가/구분 |
United States(US) Patent
등록
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국제특허분류(IPC7판) |
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출원번호 |
US-0338137
(2003-01-08)
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발명자
/ 주소 |
- Lee, Hsing-Chung
- Chui, Liew-Chuang
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출원인 / 주소 |
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대리인 / 주소 |
Allen, Dyer, Doppelt, Milbrath & Gilchrist, P.A.
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인용정보 |
피인용 횟수 :
5 인용 특허 :
177 |
초록
▼
Planar index guided vertical cavity surface emitting laser (PIG VCSEL) utilizes index guiding to provide improved optical confinement and proton implantation to improve current confinement. Index guiding is achieved by etching index guide openings (holes or partial ridges) around the optical confine
Planar index guided vertical cavity surface emitting laser (PIG VCSEL) utilizes index guiding to provide improved optical confinement and proton implantation to improve current confinement. Index guiding is achieved by etching index guide openings (holes or partial ridges) around the optical confinement region and may be adjusted by varying the etched volume of the index guide openings (holes and partial ridges). The top contact surface area is increased in the PIG VCSEL thereby lowering contact and device resistance to improve VCSEL performance further. The PIG VCSEL is a substantially planarized device for ease of manufacture.
대표청구항
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1. An index guided vertical cavity surface emitting laser comprising:a substrate;a first distributed Bragg reflective (DBR) mirror coupled to the substrate,an active area coupled to the first DBR mirror, a plurality of layers of the active area forming one or more quantum wells;a second DBR mirror c
1. An index guided vertical cavity surface emitting laser comprising:a substrate;a first distributed Bragg reflective (DBR) mirror coupled to the substrate,an active area coupled to the first DBR mirror, a plurality of layers of the active area forming one or more quantum wells;a second DBR mirror coupled to the active area, the second DBR mirror including,index guide openings to form an optical confinement region,an implanted proton region surrounding the optical confinement region,an electrically insulating material layer to coat surfaces in the index guide openings, anda partially oxidized layer above the active area, the partially oxidized layer to provide current blocking for current confinement and lower a threshold current for lasing;a first metal layer in a top contact pattern on a surface of the second DBR mirror to form a first contact terminal, provide a low resistive contact, and allow emission of photons from the optical confinement region; and,a second metal layer coupled to a surface of the substrate to form a second contact terminal. 2. The index guided vertical cavity surface emitting laser of claim 1 wherein,the index guide openings are holes in the second DBR mirror. 3. The index guided vertical cavity surface emitting laser of claim 1 wherein,the index guide openings are arc shaped open regions in the second DBR mirror. 4. The index guided vertical cavity surface emitting laser of claim 1 wherein,the electrically insulating material layer is SiN x where x is a variable. 5. The index guided vertical cavity surface emitting laser of claim 1 further comprising:a polyamide filled into the index guide openings to substantially planarize the second DBR mirror and provide a differing index of refraction from air. 6. The index guided vertical cavity surface emitting laser of claim 1 further comprising:a dielectric filled into the index guide openings to substantially planarize the second DBR mirror and provide a differing index of refraction from air. 7. The index guided vertical cavity surface emitting laser of claim 1 wherein,the second DBR mirror is a p-type distributed Bragg reflective (p-DBR) mirror. 8. The index guided vertical cavity surface emitting laser of claim 1 wherein,the second DBR mirror is an n-type distributed Bragg reflective (n-DBR) mirror. 9. The index guided vertical cavity surface emitting laser of claim 1 wherein,the first DBR mirror is an n-type distributed Bragg reflective (n-DBR) mirror, andthe second DBR mirror is a p-type distributed Bragg reflective (p-DBR) mirror. 10. The index guided vertical cavity surface emitting laser of claim 1 wherein,the first DBR mirror is a p-type distributed Bragg reflective (p-DBR) mirror, andthe second DBR mirror is an n-type distributed Bragg reflective (n-DBR) mirror. 11. The index guided vertical cavity surface emitting laser of claim 6 wherein,the dielectric is silicon nitride (SiN), silicon oxy nitride (SiO x N y ), or silicon dioxide (SiO 2 );the first DBR mirror is an n-type distributed Bragg reflective (n-DBR) mirror;the second DBR mirror is a p-type distributed Bragg reflective (p-DBR) mirror;the first metal layer is Ti:W/Au, Ti:Au/Au, or Cr/ZnAu/Au;the second metal layer is Ni/GeAu/Au; andthe substrate is gallium arsenide (GaAs). 12. The index guided vertical cavity surface emitting laser of claim 11 wherein,the gallium arsenide (GaAs) substrate includes a p-type dopant, an n-type dopant, or a semi-insulating material. 13. The index guided vertical cavity surface emitting laser of claim 1 wherein,the substrate, the first DBR mirror, the active area, the second DBR mirror, the first metal layer, and the second metal layer are substantially planar. 14. An index guided vertical cavity surface emitting laser comprising:a first-distributed-Bragg-reflective (first-DBR) mirror;an active area coupled to the first-DBR mirror;a second-distributed-Bragg-reflective (second-DBR) mirror coupled to the active area, the second-DBR mirror including,a plural ity of index guide openings in the second-DBR mirror surrounding an optical confinement region extending from the active area to a surface of the second-DBR mirror, the index guide openings providing a different index of refraction from an index of refraction of the second-DBR mirror to provide total internal reflection for index guiding and optical confinement in the optical confinement region,an implanted proton region surrounding the optical confinement region,an electrically insulating material coating surfaces of the second-DBR mirror within the plurality of index guide openings, anda partially oxidized layer above the active area, the partially oxidized layer to provide current blocking for current confinement and lower a threshold current for lasing;a first contact terminal coupled to the second-DBR mirror to allow emission of photons from a surface of the second-DBR mirror in the optical confinement region and provide a large contact surface area with a low contact resistance; anda second contact terminal under the first-DBR mirror. 15. The index guided vertical cavity surface emitting laser of claim 14 wherein,the plurality of index guide openings are holes in the second-DBR mirror surrounding the optical confinement region. 16. The index guided vertical cavity surface emitting laser of claim 14 wherein,the plurality of index guide openings are partial ridges in the second-DBR mirror surrounding the optical confinement region. 17. The index guided vertical cavity surface emitting laser of claim 16 wherein,the partial ridges in the second-DBR mirror surrounding the optical confinement region are arc shaped open regions in the second-DBR mirror. 18. The index guided vertical cavity surface emitting laser of claim 14 wherein,the implanted proton region to further improve current confinement in the active area and further lower the threshold current for lasing. 19. The index guided vertical cavity surface emitting laser of claim 14 wherein,the first-DBR mirror is an n-type distributed Bragg reflective (n-DBR) mirror, andthe second-DBR mirror is a p-type distributed Bragg reflective (p-DBR) mirror. 20. The index guided vertical cavity surface emitting laser of claim 14 further comprising:a substrate coupled between the second contact terminal and the first DBR mirror. 21. The index guided vertical cavity surface emitting laser of claim 14 wherein,the first contact terminal has multiple terminal regions that may be separately modulated to control current confinement. 22. The index guided vertical cavity surface emitting laser of claim 14 wherein,the substrate, the first DBR mirror, the active area, the second DBR mirror, the first metal layer, and the second metal layer are substantially planar. 23. A method of improving performance in a vertical cavity surface emitting laser (VCSEL), the method comprising:index guiding photons in the VCSEL using a plurality of index guide openings in a distributed Bragg reflective (DBR) mirror to improve optical confinement in an optical confinement region;implanting protons into the DBR mirror to form a proton region therein; andconfining current in the VCSEL using a partially oxidized layer to provide current blocking for current confinement. 24. The method of claim 23 wherein,the DBR mirror is a p-type distributed Bragg reflective (p-DBR) mirror, andthe index guide openings are holes in the p-DBR mirror surrounding the optical confinement region. 25. The method of claim 23 wherein,the DBR mirror is a p-type distributed Bragg reflective (p-DBR) mirror, andthe index guide openings are partial ridges in the p-DBR mirror surrounding the optical confinement region. 26. The method of claim 25 wherein,the partial ridges in the p-DBR mirror surrounding the optical confinement region are arc shaped open regions therein. 27. The method of claim 23 wherein,the partially oxidized layer is a partially oxidized Aluminum-Arsenide (AlAs) layer above an active region of the VCSEL. 28. The method of clai m 23 further comprising:increasing surface area of a top electrical contact of the VCSEL to lower contact and device resistance. 29. The method of claim 23, whereinthe proton region to further improve current confinement in an active area of the VCSEL and further lower a threshold current for lasing. 30. The method of claim 23 wherein,the VCSEL is substantially planar. 31. The method of claim 23 wherein,the index guide openings are holes in the DBR mirror within the optical confinement region. 32. The method of claim 23 wherein,the index guide openings are partial ridges in the DBR mirror within the optical confinement region. 33. An index guided vertical cavity surface emitting laser (VCSEL) to generate a laser beam output comprising:an n-type distributed Bragg reflective (n-DBR) mirror;an active region coupled to the n-DBR mirror, the active region having one or more quantum wells to generate photons;a p-type distributed Bragg reflective (p-DBR) mirror coupled to the active region, the p-DBR mirror having a plurality of index guide openings, an implanted proton region, and a first partially oxidized layer above the active region, the index guide openings to provide internal reflection to index guide and optically confine photons in the VCSEL to generate the laser beam output, the implanted proton region to confine current in the active region, the first partially oxidized layer to provide current blocking for further current confinement in the active region;a first contact terminal over the p-DBR mirror, the first contact terminal shaped to allow emission of photons from the VCSEL; anda second contact terminal under the n-DBR mirror. 34. The index guided vertical cavity surface emitting laser (VCSEL) of claim 33 wherein,the index guide openings are holes in the p-DBR mirror. 35. The index guided vertical cavity surface emitting laser (VCSEL) of claim 33 wherein,the index guide openings are arc shaped open regions in the p-DBR mirror. 36. The index guided vertical cavity surface emitting laser (VCSEL) of claim 33 wherein,the n-DBR mirror has a second partially oxidized layer under the active region to further provide current blocking for current confinement. 37. The index guided vertical cavity surface emitting laser (VCSEL) of claim 33 further comprising:a substrate coupled between the second contact terminal and the n-DBR mirror. 38. The index guided vertical cavity surface emitting laser (VCSEL) of claim 37 wherein,the substrate, the n-DBR mirror, the active region, the p-DBR mirror, the first contact terminal, and the second contact terminal are substantially planar. 39. The index guided vertical cavity surface emitting laser of claim 1, whereinthe partially oxidized layer has an oxidized portion and a non-oxidized portion. 40. The index guided vertical cavity surface emitting laser of claim 1, whereinthe partially oxidized layer above the active area is a partially oxidized Aluminum-Arsenide (AlAs) layer. 41. The index guided vertical cavity surface emitting laser of claim 1, whereinthe implanted proton region to further improve current confinement in the active area and further lower the threshold current for lasing. 42. The index guided vertical cavity surface emitting laser of claim 1, whereinthe implanted proton region includes protons. 43. The index guided vertical cavity surface emitting laser of claim 1, whereinthe implanted proton region is washer shaped and concentric with the optical confinement region. 44. The index guided vertical cavity surface emitting laser of claim 14, whereinthe partially oxidized layer has an oxidized portion and a non-oxidized portion. 45. The index guided vertical cavity surface emitting laser of claim 14, whereinthe partially oxidized layer above the active area is a partially oxidized Aluminum-Arsenide (AlAs) layer. 46. The index guided vertical cavity surface emitting laser of claim 14, whereinthe implanted proton region includes protons. 47. The index guided vertical cavity surfac e emitting laser of claim 14, whereinthe implanted proton region is washer shaped and concentric with the optical confinement region. 48. The method of claim 23, whereinthe partially oxidized layer has an oxidized portion and a non-oxidized portion. 49. The method of claim 23, whereinthe proton region is washer shaped and concentric with the optical confinement region. 50. The index guided vertical cavity surface emitting laser (VCSEL) of claim 33, whereinthe first partially oxidized layer has an oxidized portion and a non-oxidized portion. 51. The index guided vertical cavity surface emitting laser (VCSEL) of claim 33, whereinthe first partially oxidized layer above the active area is a partially oxidized Aluminum-Arsenide (AlAs) layer. 52. The index guided vertical cavity surface emitting laser (VCSEL) of claim 36, whereinthe first partially oxidized layer has a first oxidized portion and a first non-oxidized portion, andthe second partially oxidized layer has a second oxidized portion and a second non-oxidized portion. 53. The index guided vertical cavity surface emitting laser (VCSEL) of claim 36, whereinthe first partially oxidized layer and the second partially oxidized layer are partially oxidized Aluminum-Arsenide (AlAs) layers. 54. The index guided vertical cavity surface emitting laser (VCSEL) of claim 33, whereinthe implanted proton region includes protons. 55. The index guided vertical cavity surface emitting laser of (VCSEL) claim 33, whereinthe implanted proton region is washer shaped and concentric with the plurality of index guide openings.
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