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Regenerable gas purifier materials are provided capable of reducing the level of contaminants such as oxygen and water in an inert, nonreactive or reactive gas stream to parts-per-billion levels or sub-parts-per-billion levels. The purifier materials of this invention comprise a thin layer of one or

Regenerable gas purifier materials are provided capable of reducing the level of contaminants such as oxygen and water in an inert, nonreactive or reactive gas stream to parts-per-billion levels or sub-parts-per-billion levels. The purifier materials of this invention comprise a thin layer of one or more reduced forms of a metal oxide coated on the surface of a nonreactive substrate. The thin layer may further contain the completely reduced form of the metal.

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1. A method of removing contaminants from an inert, nonreactive or reactive gas stream comprising contacting said contaminated gas stream with a purifier material for a period of time sufficient to reduce the level of said contaminants to parts-per-billion levels, said purifier material consisting e

1. A method of removing contaminants from an inert, nonreactive or reactive gas stream comprising contacting said contaminated gas stream with a purifier material for a period of time sufficient to reduce the level of said contaminants to parts-per-billion levels, said purifier material consisting essentially of a nonreactive substrate selected from the group consisting of alumina, amorphous silica-alumina, silica, aluminosilicate molecular sieves, titania, and zirconia, said substrate having a surface and a thin layer of one or more metal oxides deposited on said surface, wherein said metal oxide is selected from the group consisting of oxides of molybdenum, antimony, bismuth, tin, chromium, cobalt, copper, tungsten, manganese, iron, and mixtures thereof and the oxidation state of at least a portion of said metal oxide is less than the highest oxidation state of the metal and greater than the zero oxidation state of the metal. 2. The method of claim 1, wherein the oxidation state of said metal of said purifier thin layer is lower than the maximum oxidation state of said metal. 3. The method of claim 2, wherein said thin layer of said purifier material further contains said metal in a zero oxidation state. 4. The method of claim 1, wherein said inert or nonreactive gas is selected from the group consisting of nitrogen, hydrogen, helium, neon, argon, krypton, xenon, radon, saturated and unsaturated hydrocarbons, saturated and unsaturated halocarbons, NF 3 , and SF 6 , and mixtures thereof. 5. The method of claim 1, wherein said reactive gas is selected from the group consisting of SO 2 , CO, NO, NO 2 , N 2 O, CO 2 , H 2 S, primary amines, secondary amines, and tertiary amines. 6. The method of claim 1, wherein said contaminants are one or more contaminants selected from the group consisting of oxygen, water, CO, CO 2 , NO, NO 2 , N 2 O 4 , SO 2 , SO 3 , SO, S 2 O 2 , and SO 4 . 7. The method of claim 1, wherein said purifier material is prepared by the method comprising:(a) providing a precursor comprising said nonreactive substrate having a surface and a thin layer of a metal of a first oxidation state deposited on the substrate surface;(b) heating said precursor under a flow of a gas at a temperature between about 100° C. and 600° C. for a period of time; and(c) treating said precursor from step (b) under reductive conditions sufficient to reduce the oxidation state of said metal of said precursor thin layer, thereby producing said purifier material, wherein the metal of the purifier thin layer has a second oxidation state that is lower than said first oxidation state. 8. The method of claim 7, wherein said metal of a first oxidation state is selected from the group consisting of an oxide, a salt, an acid, an organic complex, and an inorganic complex of said metal. 9. The method of claim 7, wherein said precursor thin layer is deposited on said substrate surface by a method selected from the group consisting of incipient wetness impregnation, ion exchange methods, vapor deposition, spraying of reagent solutions, co-precipitation, and physical mixing. 10. The method of claim 7, wherein said precursor is heated under a flow of nitrogen gas for about 1 to 200 hours. 11. The method of claim 7, wherein said precursor is heated under a flow of hydrogen gas for about 1 to 200 hours. 12. The method of claim 7, wherein said precursor is heated under a flow of ammonia gas for about 1 to 200 hours. 13. The method of claim 1, wherein said purifier material comprises between about 1 to 90% of said reduced forms of said metal oxide and about 10-99% of said substrate. 14. A method of removing contaminants from an inert, nonreactive or reactive gas stream comprising contacting said contaminated gas stream with a purifier material for a period of time sufficient to reduce the level of said contaminants to parts-per-billion levels, said purifier material comprising a nonreactive substrate selected from the group cons isting of alumina, amorphous silica-alumina, silica, aluminosilicate molecular sieves, titania, and zirconia, said substrate having a surface and a thin layer of one or more reduced forms of an oxide of a metal deposited on said surface, wherein the oxidation state of at least a portion of said metal oxide is less than the highest oxidation state of the metal and greater than the zero oxidation state of the metal, and said thin layer has a total surface area less than 100 m 2 /g. 15. The method of claim 14, wherein said purifier material further comprises an alkaline metal, alkaline metal oxide, or alkaline metal hydroxide deposited over said metal oxide thin layer and/or mixed in with said metal oxide thin layer. 16. The method of claim 14, wherein the oxidation state of said metal of said purifier thin layer is lower than the maximum oxidation state of said metal. 17. The method of claim 16, wherein said thin layer of said purifier material further contains said metal in a zero oxidation state. 18. A method of removing contaminants from an inert, nonreactive or reactive gas stream comprising contacting said contaminated gas stream with a purifier material for a period of time sufficient to reduce the level of said contaminants to parts-per-billion levels, said purifier material consisting essentially of a nonreactive substrate selected from the group consisting of alumina, amorphous silica-alumina, silica, aluminosilicate molecular sieves, titania, and zirconia, said substrate having a surface and a thin layer of one or more reduced forms of an oxide of a metal other than nickel deposited on said surface, wherein the oxidation state of at least a portion of said metal oxide is less than the highest oxidation state of the metal and greater than the zero oxidation state of the metal. 19. The method of claim 18, wherein said thin layer of said purifier material further contains said metal in a zero oxidation state. 20. A method of removing contaminants from an inert, nonreactive or reactive gas stream comprising contacting said contaminated gas stream with a purifier material for a period of time sufficient to reduce the level of said contaminants to parts-per-billion levels, said purifier material consisting essentially of a nonreactive substrate selected from the group consisting of alumina, amorphous silica-alumina, silica, aluminosilicate molecular sieves, titania, and zirconia, said substrate having a surface and a thin layer of one or more metal oxides deposited on said surface and an alkaline metal, alkaline metal oxide, or alkaline metal hydroxide deposited over said metal oxide thin layer and/or mixed in with said metal oxide thin layer,wherein said metal oxide is selected from the group consisting of oxides of molybdenum, antimony, bismuth, tin, chromium, cobalt, copper, tungsten, manganese, iron, and mixtures thereof and the oxidation state of at least a portion of said metal oxide is less than the highest oxidation state of the metal and greater than the zero oxidation state of the metal. 21. A method of removing contaminants from an inert, nonreactive or reactive gas stream comprising contacting said contaminated gas stream with a purifier material for a period of time sufficient to reduce the level of said contaminants to parts-per-billion levels, said purifier material consisting essentially of a nonreactive substrate selected from the group consisting of alumina, amorphous silica-alumina, silica, aluminosilicate molecular sieves, titania, and zirconia, said substrate having a surface and a thin layer of one or more reduced forms of an oxide of a metal other than nickel deposited on said surface and an alkaline metal, alkaline metal oxide, or alkaline metal hydroxide deposited over said metal oxide thin layer and/or mixed in with said metal oxide thin layer,wherein the oxidation state of at least a portion of said metal oxide is less than the highest oxidation state of the metal and greater than the zero oxidati on state of the metal.