IPC분류정보
국가/구분 |
United States(US) Patent
등록
|
국제특허분류(IPC7판) |
|
출원번호 |
US-0960419
(2001-09-21)
|
우선권정보 |
JP-0116021 (2001-04-13) |
발명자
/ 주소 |
- Ikeda, Shoji
- Tagawa, Ikuya
- Uehara, Yuji
- Ohtsuka, Yoshinori
|
출원인 / 주소 |
|
대리인 / 주소 |
Greer, Burns & Crain, Ltd.
|
인용정보 |
피인용 횟수 :
7 인용 특허 :
6 |
초록
▼
A soft magnetic film comprising Fe, Co, a metallic element (M), and oxygen (O) is provided. The soft magnetic film is represented by a composition formula of (Fe 1-a Co a ) x M y O z . The metallic element (M) is one selected from a group consisting of Al, B, Ga, Si, Ge, Y, Ti, Zr, Hf, V, Nb, T
A soft magnetic film comprising Fe, Co, a metallic element (M), and oxygen (O) is provided. The soft magnetic film is represented by a composition formula of (Fe 1-a Co a ) x M y O z . The metallic element (M) is one selected from a group consisting of Al, B, Ga, Si, Ge, Y, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, Rh, Ru, Ni, Pd and Pt, or is an alloy composed of at least two selected from this group. The composition formula fulfills the following conditions: a=0.05-0.65; y=0.2-9 at %, z=1-12 at %, and y+z=<15 at %; and x=(100−y−z) at %. A crystal structure is formed by having a bcc phase as a principal phase. The bcc phase has a crystal grain not exceeding 50 nm in diameter. The bcc phase includes a solid solution of the metallic element (M) and the oxygen (O).
대표청구항
▼
1. A soft magnetic film comprising Fe, Co, a metallic element (M), and oxygen (O), the soft magnetic film being represented by a composition formula of(Fe 1-a Co a ) x M y O z ,wherein said metallic element (M) is one selected from a group consisting of Al, B, Ga, Si, Ge, Y, Ti, Zr, Hf, V, Nb,
1. A soft magnetic film comprising Fe, Co, a metallic element (M), and oxygen (O), the soft magnetic film being represented by a composition formula of(Fe 1-a Co a ) x M y O z ,wherein said metallic element (M) is one selected from a group consisting of Al, B, Ga, Si, Ge, Y, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, Rh, Ru, Ni, Pd and Pt,said composition formula fulfills the following conditions:a=0.05-0.65;y=0.2-9 at %,z=1-5 at %, and y+z=<15 at %, andx=(100−y−z) at %, anda crystal structure is formed by having a bcc phase as a principal phase, the bcc phase having a crystal grain not exceeding 50 nm in diameter, and the bcc phase including a solid solution of said metallic element (M) and said oxygen (O). 2. The soft magnetic film as claimed in claim 1, wherein said metallic element (M) is an alloy composed of at least two selected from said group. 3. The soft magnetic film as claimed in claim 2, wherein a uniaxial magnetic anisotropy is provided upon a formation thereof. 4. The soft magnetic film as claimed in claim 3, further comprising an anisotropic microstructure. 5. The soft magnetic film as claimed in claim 4, wherein said anisotropic microstructure has a major axis shorter than 50 nm, and a minor axis shorter than said major axis. 6. The soft magnetic film as claimed in claim 2, wherein a coercive force is decreased by being annealed at a temperature lower than 300° C. after a formation thereof. 7. The soft magnetic film as claimed in claim 6, further comprising an anisotropic microstructure. 8. The soft magnetic film as claimed in claim 7, wherein said anisotropic microstructure has a major axis shorter than 50 nm, and a minor axis shorter than said major axis. 9. The soft magnetic film as claimed in claim 2, wherein an electrical resistivity does not exceed 50 μΩcm. 10. The soft magnetic film as claimed in claim 2, further comprising a different magnetic film laminated on at least one of an upper surface and an under surface thereof so as to form a composite film structure. 11. The soft magnetic film as claimed in claim 1, wherein a uniaxial magnetic anisotropy is provided upon a formation thereof. 12. The soft magnetic film as claimed in claim 11, further comprising an anisotropic microstructure. 13. The soft magnetic film as claimed in claim 12, wherein said anisotropic microstructure has a major axis shorter than 50 nm, and a minor axis shorter than said major axis. 14. The soft magnetic film as claimed in claim 1, wherein a coercive force is decreased by being annealed at a temperature lower than 300° C. after a formation thereof. 15. The soft magnetic film as claimed in claim 14, further comprising an anisotropic microstructure. 16. The soft magnetic film as claimed in claim 15, wherein said anisotropic microstructure has a major axis shorter than 50 nm, and a minor axis shorter than said major axis. 17. The soft magnetic film as claimed in claim 1, wherein an electrical resistivity does not exceed 50 μΩcm. 18. The soft magnetic film as claimed in claim 1, further comprising a different magnetic film laminated on at least one of an upper surface and an under surface thereof so as to form a composite film structure. 19. A magnetic recording head comprising:a soft magnetic film used in one of a whole magnetic pole and an end of said magnetic pole near a gap, the soft magnetic film containing Fe, Co, a metallic element (M), and oxygen (O), the soft magnetic film being represented by a composition formula of (Fe 1-a Co a ) x M y O z ,wherein said metallic element (M) is one selected from a group consisting of Al, B, Ga, Si, Ge, Y, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, Rh, Ru, Ni, Pd and Pt,said composition formula fulfills the following conditions:a=0.05-0.65;y=0.2-9 at %, z=1-5 at %, and y+z=<15 at %; andx=(100−y−z) at %, anda crystal structure is formed by having a bcc phase as a principal phase, the bcc phase having a crystal grain not excee ding 50 nm in diameter, and the bcc phase including a solid solution of said metallic element (M) and said oxygen (O). 20. The magnetic recording head as claimed in claim 19, wherein said metallic element (M) is an alloy composed of at least two selected from said group. 21. A soft magnetic film comprising Fe, Co, a metallic element (M), and oxygen (O), the soft magnetic film being represented by a composition formula of (Fe 1-a Co a ) x M y O z ,wherein said metallic element (M) is one selected from a group consisting of Al, B, Ga, Si, Ge, Y, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, Rh, Ru, Ni, Pd and Pt,said composition formula fulfills the following conditions:a=0.05-0.65;y=0.2-9 at %, z=1-12 at %, and y+z=<15 at %; andx=(100−y−z) at %, anda crystal structure is formed by having a bcc phase as a principal phase, the bcc phase having a crystal grain not exceeding 50 nm in diameter, and the bcc phase including a solid solution of said metallic element (M) and said oxygen (O).
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