IPC분류정보
국가/구분 |
United States(US) Patent
등록
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국제특허분류(IPC7판) |
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출원번호 |
US-0349661
(2003-01-23)
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발명자
/ 주소 |
- Lawson, John
- Irwin, Dale
- Chervenak, Steve
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출원인 / 주소 |
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대리인 / 주소 |
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인용정보 |
피인용 횟수 :
12 인용 특허 :
8 |
초록
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A replacement chamber shield is provided for a wafer processing machine that replaces many prior art shield components with a single piece shield. The shield is particularly suitable for use in a processing chamber of a vacuum processing machine of a type for processing a wafer in a vertically-orien
A replacement chamber shield is provided for a wafer processing machine that replaces many prior art shield components with a single piece shield. The shield is particularly suitable for use in a processing chamber of a vacuum processing machine of a type for processing a wafer in a vertically-oriented split-plenum, such as machines of the type described in U.S. Pat. Nos. 4,909,695 and 4,915,564 and the machine marketed under the trademark ECLIPSE MARK II by Tokyo Electron Limited. The shield is formed of sheet material formed into an axially-extending cylindrical sidewall that turns radially inwardly into an annular shoulder that oppositely turns into an at least partially axially-extending section that further turns oppositely back radially inwardly into an annular disc having a central circular opening that is larger in diameter than the given wafer diameter. Advantageous dimensions and geometric relationships to components of the machine are described and claimed.
대표청구항
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1. A chamber shield for a vacuum processing machine for processing a wafer of a given wafer diameter at a given target-to-substrate spacing from a sputtering target in a vertically-oriented split-plenum that is divided by a vertical index plate that rotates in a vertical plane in the plenum on a hor
1. A chamber shield for a vacuum processing machine for processing a wafer of a given wafer diameter at a given target-to-substrate spacing from a sputtering target in a vertically-oriented split-plenum that is divided by a vertical index plate that rotates in a vertical plane in the plenum on a horizontal axis to index each of a plurality of wafer holders carried by the plate among a corresponding plurality of vacuum chambers of which a plurality are processing chambers that are each formed in two halves on opposite sides of the index plate by the movement toward each other of a pair of closure members that clamp against a seal ring that is mounted in an opening in the index plate and has one of the wafer holders mounted in its center, the shield comprising:sheet material having a generally circular cross-section and formed into an axially-extending cylindrical sidewall that turns radially inwardly into an annular shoulder that oppositely turns into an at least partially axially-extending section that further turns oppositely back radially inwardly into an annular disc having a central circular opening that is larger in diameter than the given wafer diameter the overall height of the shield is greater than the given target-to-substrate spacing. 2. The shield of claim 1 wherein:the at least partially axially extending section is frusto-conical. 3. A chamber shield for a vacuum processing machine for processing a wafer of a given wafer diameter at a given target-to-substrate spacing from a sputtering target in a vertically-oriented split-plenum that is divided by a vertical index plate that rotates in a vertical plane in the plenum on a horizontal axis o index each of a plurality of wafer holders carried by the plate among a corresponding plurality of vacuum chambers of which a plurality are processing chambers that are each formed in two halves on opposite sides of the index plate by the movement toward each other of a pair of closure members that damn against a seal ring that is mounted in an opening in the index plate and has one o the wafer holders mounted in its center the shield comprising:sheet material having a generally circular cross-section and formed into an axially-extending cylindrical sidewall that turns radially inwardly into an annular shoulder that oppositely turns into an at least partially axially-extending section that further turns oppositely back radially inwardly into an annular disc having a central circular opening that is larger in diameter than the given wafer diameter: the shield having a feature selected from the group consisting of: the material having a thickness 0.070 inches +/?0.010 inches; the cylindrical sidewall having a maximum outside diameter of 13.188 inches; the cylindrical sidewall having a diameter of 13.188 inches, +0.000/?0.010 inches; the cylindrical sidewall having an inside diameter greater than 13 inches; the cylindrical sidewall having an axial length not greater than 2.847 inches; the cylindrical sidewall having an axial length not more than 0.347 inches greater than the given target-to-substrate spacing; the cylindrical sidewall having an axial length of not more than 2.12 inches; the cylindrical sidewall having an axial length of 2.12 +0.0000/?0.02 inches; the annular shoulder has an inside diameter of not more than 11.08 inches; the at least partially axially-extending section having an axial length of 0.65 inches +/?0.02 inches; the at least partially axially-extending section having an axial length of less than 0.7 inches; the circular opening having a diameter of 5.591+/?0.005 inches for a given wafer diameter of 100 mm, 6.575+/?0.005 for a given wafer diameter of 125 mm, 7.560+/?0.005 inches for a given wafer diameter of 150 mm, and 9.528+/?0.005 inches for a given wafer diameter of 200 mm; and the shield having a plurality of vent holes or slots therein configured to lock line-of-sight paths through the shield. 4. A wafer processing machine for processing a wafer of the given wafer diameter at the given target-to-substrate spacing from a sputtering target in a chamber lined with a single piece chamber shield according claim 3, the machine comprising:a plurality of chambers including at least one processing chamber having a door having a sputtering target supported thereon having a sputtering surface; a vertically-oriented split-plenum; a vertical index plate having a plurality of openings therein, each having a seal ring supported in the opening and a wafer holder supported at the center of the seal ring, the index plate being rotatable in a vertical plane in the plenum on the horizontal axis to index each of the wafer holders among the chambers; a pair of closure members moveable toward each other that clamp against a seal ring to form a sealed chamber enclosing the wafer and the target with the sputtering surface of the target facing the wafer with the target spaced from the wafer at a given target-to-substrate spacing of from 1.7 to 2.5 inches. 5. The wafer processing machine of claim 4 wherein:the clearance for the target, with the shield installed, is sufficient to allow adequate clearance when the door swings on hinges carrying the target into and out of the chamber. 6. The wafer processing machine of claim 4 wherein:the clearance between the target and the cylindrical sidewall of the shield, when installed in the chamber, is at least 0.094 inches. 7. The wafer processing machine of claim 4 wherein:the cylindrical sidewall covers the wall of the chamber to 0.493 inches beyond the sputtering surface of the target for given target-to-substrate spacings including 2.5, 2.0 and 1.7 inches. 8. A chamber shield for a vacuum processing machine for processing a wafer of a given wafer diameter at a given target-to-substrate spacing from a sputtering target in a vertically-oriented split-plenum that is divided by a vertical index plate that rotates in a vertical plane in the plenum on a horizontal axis index each of a plurality of wafer holders carried by the plate among a corresponding plurality of vacuum chambers of which a plurality are processing chambers that are each formed in two halves on opposite sides of the index plate by the movement toward each other of a pair of closure members that clamp against a seal ring that is mounted in an opening in the index plate and has one of the wafer holders mounted in its center, the shield comprising;sheet material having a generally circular cross-section and formed into an axially-extending cylindrical sidewall that turns radially inwardly into an annular shoulder that oppositely turns into an at least partially axially-extending section that further turns oppositely back radially inwardly into an annular disc having a central circular opening that is larger in diameter than the given wafer diameter; the shield having at least two features selected from the group consisting of: the material having a thickness of 0.070 inches +/?0.010 inches; the cylindrical sidewall having a maximum outside diameter of 13.188 inches; the cylindrical sidewall having an inside diameter greater than 13 inches; the cylindrical sidewall having an axial length not greater than 2.847 inches; the annular shoulder has an inside diameter of not more than 11.08 inches; the at least partially axially-extending section having an axial length of not more than 0.67 inches; the circular opening having a diameter of 5.591 +/?0.005 inches for a given wafer diameter of 100 mm, 6.575 +/?0.005 for a given wafer diameter of 125 mm, 7.560 +/?0.005 inches for a given wafer diameter of 150 mm, and 9.528 +/?0.005 inches for a given wafer diameter of 200 mm; and the shield having a plurality of vent holes or slots therein configured to lock line-of-sight paths through the shield and located within a 90° quadrant of the cylindrical sidewall. 9. A chamber shield for a vacuum processing machine for processing a wafer of a given wafer diameter at a given target-to-substrate spacing from a sputtering target in a vertically-oriented split-plenum that is divided by a vertical index plate that rotates in a vertical plane in the plenum on a horizontal axis index each of a plurality of wafer holders carried by the plate among a corresponding plurality of vacuum chambers of which a plurality are processing chambers that are each formed in two halves on opposite sides of the index plate by the movement toward each other of a pair of closure members that clamp against a seal ring that is mounted in an opening in the index plate and has one o the wafer holders mounted in its center the shield comprising:sheet material having a generally circular cross-section and formed into an axially-extending cylindrical sidewall that turns radially inwardly into an annular shoulder that oppositely turns into an at least partially axially-extending section that further turns oppositely back radially inwardly into an annular disc having a central circular opening that is larger in diameter than the given wafer diameter; and wherein: the material has a thickness 0.070 inches +/?0.010 inches; the cylindrical sidewall has an outside diameter of 13.188 inches, +0.000/?0.010 inches, an inside diameter greater than 13 inches, and an axial length not greater than 0.347 inches greater than the given target-to-substrate spacing; the at least partially axially-extending section has an axial length of 0.65 inches +/?0.02 inches; the circular opening having a diameter of 5.591+/?0.005 inches for a given wafer diameter of 100 mm, 6.575+/?0.005 for a given wafer diameter of 125 mm, 7.560+/?0.005 inches for a given wafer diameter of 150 mm, and 9.528+/?0.005 inches for a given wafer diameter of 200 mm; and the shield has a plurality of vent holes or slots therein located wit in a 90° quadrant of the cylindrical sidewall and configured to block line-of-sight paths through the shield. 10. A wafer processing machine for processing a wafer of the given wafer diameter at the given target-to-substrate spacing from a sputtering target in a chamber lined with a single piece chamber shield according claim 9, the machine comprising:a plurality of chambers including at least one processing chamber having a door having a sputtering target supported thereon having a sputtering surface; a vertically-oriented split-plenum; a vertical index plate having a plurality of openings therein, each having a seal ring supported in the opening and a wafer holder supported at the center of the seal ring, the index plate being rotatable in a vertical plane in the plenum on the horizontal axis to index each of the wafer holders among the chambers; a pair of closure members moveable toward each other that clamp against a seal ring to form a sealed chamber enclosing the wafer and the target with the sputtering surface of the target facing the wafer with the target spaced from the wafer at a given target-to-substrate spacing of from 1.7 to 2.5 inches. 11. The wafer processing machine of claim 10 wherein:the clearance for the target, with the shield installed, is sufficient to allow adequate clearance when the door swings on hinges carrying the target into and out of th chamber. 12. The wafer processing machine of claim 10 wherein:the clearance between the target and the cylindrical sidewall of the shield, when installed in the chamber, is at least 0.094 inches. 13. The wafer processing machine of claim 10 wherein:the cylindrical sidewall covers the wall of the chamber to 0.493 inches beyond the sputtering surface of the target for given target-to-substrate spacings including 2.5, 2.0 and 1.7 inches. 14. A wafer processing machine for processing wafer of the given wafer diameter at the given target-to-substrate spacing from a sputtering target a chamber lined with a single piece chamber shield, the machine comprising:a chamber shield comprising sheet material having a generally circular cross-section and formed into an axially-extending cylindrical sidewall that turns radially inwardly into an annular shoulder that oppositely turns into an at least partially axially-extending section that further turns oppositely back radially inwardly into an annular disc having a central circular opening that is larger in diameter than the given wafer diameter; a plurality of chambers including at least one processing chamber having a door having a sputtering target supported thereon having a sputtering surface; a vertically-oriented split-plenum; a vertical index plate having a plurality of openings therein, each having a seal ring supported in the opening and a wafer holder supported at the center of the seal ring, the index plate being rotatable in a vertical plane in the plenum on the horizontal axis to index each of the wafer holders among the chambers; and a pair of closure members moveable toward each other that clam against a seal ring to form a sealed chamber enclosing the wafer and the target with the sputtering surface of the target facing the wafer with the target spaced from the wafer at a given target-to-substrate spacing of from 1.7 to 2.5 inches. 15. The wafer processing machine of claim 14 wherein:the clearance for the target, with the shield installed, is sufficient to allow adequate clearance when the door swings on hinges carrying the target into and out of the chamber. 16. The wafer processing machine of claim 14 wherein:the clearance between the target and the cylindrical sidewall of the shield, when installed in the chamber, is at least 0.094 inches. 17. The wafer processing machine of claim 14 wherein:the cylindrical sidewall covers the wall of the chamber to 0.493 inches beyond the sputtering surface of the target for given target-to-substrate spacings including 2.5, 2.0 and 1.7 inches. 18. A method of maintaining a vertical plenum wafer processing machine comprising a shield formed of sheet material having a generally circular cross-section and formed into an axially-extending cylindrical sidewall that turns radially inwardly into an annular shoulder that oppositely turns into an at least partially axially-extending section that further turns oppositely back radially inwardly into an annular disc having a central circular opening that is larger in diameter than the given wafer diameter in a processing chamber of a vacuum processing machine that is configured for processing a wafer of a given wafer diameter at a given target-to-substrate spacing from a sputtering target in a vertically-oriented split-plenum that is divided by a vertical index plate that rotates in a vertical plane in the plenum on horizontal axis to index each of a plurality of wafer holders carried by the plate among a corresponding plurality of vacuum chambers of which a plurality are processing chambers that are each formed in two halves on opposite sides of the index plate by the movement toward each other of a pair o closure members that clamp against a seal ring that is mounted in an opening in the index plate and has one of the wafer holders mounted in its center.19. The method of claim 18 including:installing the shield and replacing therewith at least two of a pod shield, gate valve shield, two corner shields, a cathode adapter shield, a spacer ring, and a wafer holder shield. 20. The method of claim 18 wherein: the cylindrical sidewall, when installed, is at least 0.032 inches from a pod chamber sidewall.
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