IPC분류정보
국가/구분 |
United States(US) Patent
등록
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국제특허분류(IPC7판) |
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출원번호 |
US-0118605
(2002-04-08)
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발명자
/ 주소 |
- Yang, Michael Xi
- Yoon, Hyungsuk Alexander
- Zhang, Hui
- Fang, Hongbin
- Xi, Ming
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출원인 / 주소 |
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대리인 / 주소 |
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인용정보 |
피인용 횟수 :
75 인용 특허 :
203 |
초록
▼
Embodiments of the present invention relate to an apparatus and method of cyclical deposition utilizing three or more precursors in which delivery of at least two of the precursors to a substrate structure at least partially overlap. One embodiment of depositing a ternary material layer over a subst
Embodiments of the present invention relate to an apparatus and method of cyclical deposition utilizing three or more precursors in which delivery of at least two of the precursors to a substrate structure at least partially overlap. One embodiment of depositing a ternary material layer over a substrate structure comprises providing at least one cycle of gases to deposit a ternary material layer. One cycle comprises introducing a pulse of a first precursor, introducing a pulse of a second precursor, and introducing a pulse of a third precursor in which the pulse of the second precursor and the pulse of the third precursor at least partially overlap. In one aspect, the ternary material layer includes, but is not limited to, tungsten boron silicon (WBxSiy), titanium silicon nitride (TiSixNy), tantalum silicon nitride (TaSixNy), silicon oxynitride (SiOxNy), and hafnium silicon oxide (HfSixOy). In one aspect, the composition of the ternary material layer may be tuned by changing the flow ratio of the second precursor to the third precursor between cycles.
대표청구항
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1. A method of depositing a ternary material layer over a substrate structure comprising:providing at least one cycle of gases to deposit a ternary material layer comprising WBxSiy, wherein WBxSiy comprises tungsten to borane to silicon in a ratio in which X is between about 0.0 and about 0.35 and Y
1. A method of depositing a ternary material layer over a substrate structure comprising:providing at least one cycle of gases to deposit a ternary material layer comprising WBxSiy, wherein WBxSiy comprises tungsten to borane to silicon in a ratio in which X is between about 0.0 and about 0.35 and Y is between about 0.0 and about 0.20, the at least one cycle comprising: introducing a pulse of a first precursor; introducing a pulse of a second precursor; and introducing a pulse of a third precursor, wherein the pulse of the second precursor and the pulse of the third precursor at least partially overlap. 2. The method of claim 1, wherein the first precursor is a tungsten precursor, the second precursor is a borane precursor, and the third precursor is a silicon precursor.3. The method of claim 2, wherein the tungsten precursor comprises tungsten hexafluoride (WF6), the borane precursor comprises diborane (B2H6), and the silicon precursor comprises silane (SiH4).4. The method of claim 1, further comprising changing the flow ratio of the second precursor to the third precursor between cycles.5. A method of depositing a ternary material layer over a substrate structure comprising:providing at least one cycle of gases to deposit a ternary material layer comprising HfSixOy wherein HfSixOy comprises hafnium to silicon to oxygen in a ratio in which X is between about 0.0 and about 0.5 and Y is between about 0.0 and about 1.0, the at least one cycle comprising: introducing a pulse of a hafnium precursor, introducing a pulse of a silicon precursor; and introducing a pulse of an oxygen precursor, wherein the pulse of the silicon precursor and the pulse of the oxygen precursor at least partially overlap. 6. The method of claim 5, further comprising changing the flow ratio of the silicon precursor to the oxygen precursor between cycles.7. A method of depositing a ternary material layer over a substrate structure comprising:providing at least one cycle of gases to deposit a ternary material layer comprising WBxSiy, wherein WBxSiy comprises tungsten to borane to silicon in a ratio in which X is between about 0.0 and about 0.35 and Y is between about 0.0 and about 0.20, the at least one cycle comprising: introducing a pulse of a first precursor; introducing a first pulse of a purge gas; introducing a pulse of a second precursor; introducing a pulse of a third precursor without a pulse of a purge gas; and introducing a second pulse of the purge gas. 8. The method of claim 7, wherein the first precursor is a tungsten precursor, the second precursor is a borane precursor, and the third precursor is a silicon precursor.9. The method of claim 7, wherein the first pulse of the purge gas and the second pulse of the purge comprise a continuous flow of the purge gas.10. The method of claim 7, wherein the first pulse of the purge gas and the second pulse of the purge comprise separate flows of the purge gas.11. The method of claim 7, further comprising changing the flow ratio of the second precursor to the third precursor between cycles.12. A method of depositing a ternary material layer over a substrate structure comprising:providing at least one cycle of gases to deposit a ternary material layer comprising HfSixOy, wherein HfSixOy comprises hafnium to silicon to oxygen in a ratio in which X is between about 0.0 and about 0.5 and Y is between about 0.0 and about 1.0, the at least one cycle comprising: introducing a pulse of a hafnium precursor; introducing a first pulse of a purge gas; introducing a pulse of a silicon precursor; introducing a pulse of an oxygen precursor without a pulse of a purge gas; and introducing a second pulse of the purge gas. 13. The method of claim 12, wherein the first pulse of the purge gas and the second pulse of the purge comprise a continuous flow of the purge gas.14. The method of claim 12, wherein the first pulse of the purge gas and the second pulse of the purge comprise separate flows of the purge gas.15. The method of claim 12, further comprising changing the flow ratio of the second precursor to the third precursor between cycles.
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