Solar cell and method for making a solar cell
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
H01L-031068
H01L-03118
H01L-0310224
출원번호
US-0258720
(2001-04-21)
우선권정보
DE-0020541 (2000-04-27)
국제출원번호
PCT/DE01/01542
(2002-10-25)
§371/§102 date
20021025
(20021025)
국제공개번호
WO01/82383
(2001-11-01)
발명자
/ 주소
Fath, Peter
Jooss, Wolfgang
출원인 / 주소
Universitat Konstanz
대리인 / 주소
Baker &
인용정보
피인용 횟수 :
18인용 특허 :
9
초록▼
A solar cell with buried contacts in recesses (7) on a first surface (2). On a lateral face (4), a metal layer (12) is produced. The metal layer (12) extends into a lateral zone (9) of a second surface (3) opposite the first surface (2). The metal layer serves as a first electrode (14). On the secon
A solar cell with buried contacts in recesses (7) on a first surface (2). On a lateral face (4), a metal layer (12) is produced. The metal layer (12) extends into a lateral zone (9) of a second surface (3) opposite the first surface (2). The metal layer serves as a first electrode (14). On the second surface (3) a second electrode (15), electrically separate from the first electrode (14), is produced so that the solar cell is provided with a back connection.
대표청구항▼
1. A method for producing a solar cell with a semiconducting doped substrate (1), said substrate having a first surface (2), a second surface (3) opposite said first surface (1), and an edge face (4), said method comprising:forming an emitter layer (5) on at least portions of the first surface (2),
1. A method for producing a solar cell with a semiconducting doped substrate (1), said substrate having a first surface (2), a second surface (3) opposite said first surface (1), and an edge face (4), said method comprising:forming an emitter layer (5) on at least portions of the first surface (2), the edge face (4), and an edge region (9) of the second surface (3); introducing a plurality of longitudinal recesses (7) in the first surface (2), said recesses extending between portions of the edge face (4); producing a doped layer (8), complementary to the substrate (1) in at least said recesses (7); applying a metal layer (12) on electrically conductive regions of the first and second surfaces (2, 3) and of the edge face (4), and thereby filling said recesses (7); and forming a first electrode (14) which is electrically connected to the first surface (2) by means of the edge region (9), and forming a second electrode (15) on the second surface (3) in a region (18) located adjacent said edge region (9), the electrodes (14, 15) electrically separated from one another on the second surface (3). 2. The method according to claim 1 further comprising introducing insulation trenches (13) whereby said electrodes (14, 15) are electrically separated.3. The method according to claim 2 wherein said introducing comprises mechanical milling said insulation trenches (13).4. The method according to claim 1 further comprising applying insulation strips (17) to the second surface (3) whereby said electrodes (14, 15) are electrically separated.5. The method according to claim 1 wherein said emitter layer (5) is formed over the entire substrate (1) and is subsequently removed from at least the second surface (3).6. The method according to claim 1 further comprising applying a dielectric (6) to the first surface (2).7. The method according to claim 6 further comprising applying the dielectric (6) to said edge face (4) and keeping said second surface (3) free of dielectric (6).8. The method according to claim 7 wherein said dielectric (6) and said emitter layer (5) are first removed from said edge face (4) before applying said metal layer (12).9. The method according to claim 6, in which the dielectric (6) applied to the edge face (4) is activated for currentless metal deposition before applying the metal layer (12).10. The method according to claim 6, in which the doped layer (8) complementary to the substrate (1) is formed on all portions of the first surface (2), of the second surface (3), and of the edge face (4), which are free of dielectric (6).11. The method according to claim 1 further comprising applying a doped layer (11) corresponding to the substrate (1) on the second surface (3) in a region (18) which is located between the edge region (9) and between the substrate (1) and the second electrode (15).12. The method according to claim 1 further comprising introducing recesses into the second surface (3) and wherein said recesses introduced into the second surface (3) are filled with metal to form the second electrode (15).13. A solar cell comprising a semiconducting doped substrate (1) which has a first surface (2), a second surface (3) opposite the first surface (2), and an edge face (4);an emitter layer (5) disposed on the first surface (2); an edge region (9) located on said second surface and bounded by recesses (13) located in said second surface (3); a plurality of second recesses (7) in said first surface, said second recesses (7) extending to two opposed edges of said first surface (2) and into said edge face (4), said second recesses (7) filled with conductive metal and thereby defining electrical conductors; a first electrode (14) disposed on said second face (3); a metal layer (12) on said edge face (4), said metal layer (12) electrically connected to said electrical conductors located at said two opposed edges of said second surface (2) and to said first electrode (14); a metal layer (12) on the second surface (3) and forming a second electrode (15), the second electrode (15) surrounded by said edge region (9), the first electrode (14) and the second electrode (15) electrically separated from one another on the second surface (3) by said recesses (13). 14. Solar cell according to claim 13 further comprising a doped layer (8) complementary to the substrate (1) and located in the edge region (9).15. Solar cell according to claim 13 wherein said recesses (13) comprise insulation trenches (13) which extend into the substrate (1) on the inside of the edge region (9) thereby electrically separating the first and second electrodes (14, 15).16. A solar cell comprising a semiconducting doped substrate (1) which has a first surface (2), a second surface (3) opposite the first surface (2), and an edge face (4);an emitter layer (5) disposed on the first surface (2); an edge region (9) located on said second surface and bounded by insulation strips (17) located on said second surface (3); a plurality of second recesses (7) in said first surface, said second recesses (7) extending to two opposed edges of said first surface (2) and into said edge face (4), said second recesses (7) filled with conductive metal and thereby defining electrical conductors; a first electrode (14) disposed on said second face (3); a metal layer (12) on said edge face (4), said metal layer (12) electrically connected to said electrical conductors located at said two opposed edges of said second surface (2) and to said first electrode (14); a metal layer (12) on the second surface (3) and forming a second electrode (15), the second electrode (15) surrounded by said edge region (9), the first electrode (14) and the second electrode (15) electrically separated from one another on the second surface (3) by said insulation strips (17).
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이 특허에 인용된 특허 (9)
Safir Yakov (Giesegaardvej 104 DK-4100 Ringsted DKX), Bifacial solar cell.
Minahan Joseph A. (Simi Valley CA) Ralph Eugene L. (San Gabriel CA) Dill Hans G. (Newhall CA), Process for fabricating a wraparound contact solar cell.
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