Forming submicron integrated-circuit wiring from gold, silver, copper, and other metals
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
H01L-02358
H01L-02348
출원번호
US-0789091
(2001-02-20)
발명자
/ 주소
Farrar, Paul A.
출원인 / 주소
Micron Technology, Inc.
대리인 / 주소
Schwegman, Lundberg, Woessner &
인용정보
피인용 횟수 :
12인용 특허 :
75
초록▼
A typical integrated circuit interconnects millions of microscopic transistors and resistors with aluminum wires buried in silicon-dioxide insulation. Yet, aluminum wires and silicon-dioxide insulation are a less attractive combination than gold, silver, or copper wires combined with polymer-based i
A typical integrated circuit interconnects millions of microscopic transistors and resistors with aluminum wires buried in silicon-dioxide insulation. Yet, aluminum wires and silicon-dioxide insulation are a less attractive combination than gold, silver, or copper wires combined with polymer-based insulation, which promise both lower electrical resistance and capacitance and thus faster, more efficient circuits. Unfortunately, conventional etch-based techniques are ineffective with gold, silver, or copper, and conventional polymer formation promote reactions with metals that undermine the insulative properties of polymer-based insulations. Accordingly, the inventor devised methods which use a liftoff procedure to avoid etching problems and a non-acid-polymeric precursor and non-oxidizing cure procedure to preserve the insulative properties of the polymeric insulator. The resulting interconnective structures facilitate integrated circuits with better speed and efficiency.
대표청구항▼
1. An integrated circuit comprising:a plurality of transistors; and an oxidation-resistant polymeric layer supporting at least one conductive structure that is electrically coupled to at least one of the transistors, with the at least one conductive structure comprising at least one of zirconium, ha
1. An integrated circuit comprising:a plurality of transistors; and an oxidation-resistant polymeric layer supporting at least one conductive structure that is electrically coupled to at least one of the transistors, with the at least one conductive structure comprising at least one of zirconium, hafnium, tantalum, and titanium and at least one of gold, silver, and copper. 2. A system comprising a processor coupled to at least one integrated memory circuit, each of which comprises a plurality of transistors and an oxidation-resistant polymeric layer supporting a plurality of conductive structures each of which is electrically coupled to to at least one of the transistors, with at least one of the conductive structures comprising at least one of zirconium, hafnium, tantalum, and titanium and at least one of gold, silver, and copper.3. An integrated circuit comprising:a plurality of transistors; and an oxidation-resistant polymeric layer supporting at least one conductive structure which is electrically coupled to at least one of the transistors, with said at least one conductive structure comprising silver and at least one of zirconium, hafnium, tantalum, and titanium. 4. The integrated circuit of claim 3 wherein each of at least one said conductive structure comprises a barrier layer and a silver layer on top of the barrier layer, with the barrier layer comprising at least one of zirconium, hafnium, and tantalum.5. The integrated circuit of claim 4 wherein said at least one conductive structure has a width of about 0.15 microns.6. A system comprising a processor coupled to at least one integrated memory circuit that comprises a plurality of transistors and an oxidation-resistant polymeric layer supporting at least one conductive structure that is electrically coupled to at least one of the transistors, with said at least one conductive structure comprising silver and at least one of zirconium, hafnium, tantalum, and titanium.7. The system of claim 6 wherein said at least one conductive structure comprises a barrier layer and a silver layer on top of the barrier layer, with the barrier layer comprising at least one of zirconium, hafnium, and tantalum.8. The system of claim 7 wherein said at least one conductive structure has a width of about 0.15 microns.9. A system comprising a processor coupled to at least one integrated memory circuit which comprises a plurality of transistors and an oxidation-resistant polymeric layer supporting at least one conductive structure that is electrically coupled to at least one of the transistors, with said at least one conductive structure comprising silver and at least one of zirconium and hafnium.10. An integrated circuit comprising:a plurality of transistors; and an oxidation-resistant polymeric layer supporting at least one conductive structure which is electrically coupled to at least one of the transistors, with said at least one conductive structure comprising silver and zirconium. 11. An integrated circuit comprising:a plurality of transistors; and an oxidation-resistant polymeric layer supporting at least one conductive structure which is electrically coupled to at least one of the transistors, with said at least one conductive structure comprising silver and hafnium. 12. An integrated circuit comprising:a plurality of transistors; and an oxidation-resistant polymeric layer supporting at least one conductive structure which is electrically coupled to at least one of the transistors, with said at least one conductive structure comprising silver and tantalum. 13. An integrated circuit comprising:a plurality of transistors; and an oxidation-resistant polymeric layer supporting at least one conductive structure which is electrically coupled to at least one of the transistors, with said at least one conductive structure comprising silver and titanium. 14. An integrated circuit comprising:a plurality of transistors; and an oxidation-resistant polymeric layer supporting at least one conductive structure that is electrically coupled to at least one of the transistors, with said at least one conductive structure comprising copper and at least one of zirconium, hafnium, tantalum, and titanium. 15. The integrated circuit of claim 14 wherein said at least one conductive structure comprises a barrier layer and a copper layer on top of the barrier layer, with the barrier layer comprising at least one of zirconium, hafnium, and tantalum.16. The integrated circuit of claim 15 wherein said at least one conductive structure has a width of about 0.15 microns.17. An integrated circuit comprising:a plurality of transistors; and an oxidation-resistant polymeric layer supporting at least one conductive structure which is electrically coupled to at least one of the transistors, with said at least one conductive structure comprising copper and zirconium. 18. An integrated circuit comprising:a plurality of transistors; and an oxidation-resistant polymeric layer supporting at least one conductive structure which is electrically coupled to at least one of the transistors, with said at least one conductive structure comprising copper and hafnium. 19. An integrated circuit comprising;a plurality of transistors; and an oxidation-resistant polymeric layer supporting at least one conductive structure which is electrically coupled to at least one of the transistors, with said at least one conductive structure comprising copper and tantalum. 20. An integrated circuit comprising:a plurality of transistors; and an oxidation-resistant polymeric layer supporting at least one conductive structure which is electrically coupled to at least one of the transistors, with said at least one conductive structure comprising copper and titanium. 21. A system comprising a processor coupled to at least one integrated memory circuit which comprises a plurality of transistors and an oxidation-resistant polymeric layer supporting at least one conductive structure that is electrically coupled to at least one of the transistors, with said at least one conductive structure comprising copper and at least one of zirconium, hafnium, tantalum, and titanium.22. The system of claim 21 wherein said at least one conductive structure comprises a barrier layer and a copper layer on top of the barrier layer, with the barrier layer comprising at least one of zirconium, hafnium, and tantalum.23. The system of claim 22 wherein said at least one conductive structure has a width of about 0.15 microns.24. A system comprising a processor coupled to at least one integrated memory circuit which comprises a plurality of transistors and an oxidation-resistant polymeric layer supporting at least one conductive structures that is electrically coupled to at least one of the transistors, with said at least one conductive structure comprising copper and at least one of zirconium and hafnium.25. An integrated circuit comprising:a plurality of transistors; and an oxidation-resistant polymeric layer supporting at least one conductive structure which is electrically coupled to at least one of the transistors, with said at least one conductive structure comprising gold and at least one of zirconium, hafnium, tantalum, and titanium. 26. An integrated circuit comprising:a plurality of transistors; and an oxidation-resistant polymeric layer supporting at least one conductive structure which is electrically coupled to at least one of the transistors, with at least one conductive structure comprising gold and zirconium. 27. An integrated circuit comprising:a plurality of transistors; and an oxidation-resistant polymeric layer supporting at least one conductive structure which is electrically coupled to at least one of the transistors, with said at least one conductive structure comprising gold and hafnium. 28. An integrated circuit comprising:a plurality of transistors; and an oxidation-resistant polymeric layer supporting at least one conductive structure which is electrically coupled to at least one of the transistors, with said at least one conductive structure comprising gold and tantalum. 29. An integrated circuit comprising:a plurality of transistors; and an oxidation-resistant polymeric layer supporting at least one conductive structure which is electrically coupled to at least one of the transistors, with said at least one conductive structure comprising gold and titanium. 30. A system comprising a processor coupled to at least one integrated memory circuit which comprises a plurality of transistors and an oxidation-resistant polymeric layer supporting at least one conductive structure that is electrically coupled to at least one of the transistors, with said at least one conductive structure comprising gold and at least one of zirconium and hafnium.
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