초록 ▼

The heat of arc plasma generated in arc welding is used to provide a welding method for a Si-based material. The method of the present invention is capable of welding a Si-based material, which is difficult to weld by conventional methods due to its brittle nature and high electric resistance. In an

The heat of arc plasma generated in arc welding is used to provide a welding method for a Si-based material. The method of the present invention is capable of welding a Si-based material, which is difficult to weld by conventional methods due to its brittle nature and high electric resistance. In an argon gas atmosphere, a tungsten electrode is used as a cathode. A water cooling copper sheet and plate is used as an anode. An arc is generated between this pair of electrodes. The arc length is gradually extended, and a pair of Si-based materials are near an arc column. Fusion welding of a weld zone is carried out while rotating the Si-based materials around an axis.

대표청구항 ▼

1. A method for welding a Si-based material containing a single crystal or a polycrystal silicon, comprising:generating an arc between first and second electrodes; bringing said Si-based material proximal to an arc column; and performing welding by melting said Si-based material using heat of an arc

1. A method for welding a Si-based material containing a single crystal or a polycrystal silicon, comprising:generating an arc between first and second electrodes; bringing said Si-based material proximal to an arc column; and performing welding by melting said Si-based material using heat of an arc plasma. 2. The method for welding a Si-based material according to claim 1, wherein a water cooling plate is used as an anode side electrode of said first and second electrodes.3. The method for welding a Si-based material according to claim 2, further comprising:providing means for improving a directionality of said arc. 4. The method for welding a Si-based material according to claim 1, wherein a tungsten electrode is used as a cathode side electrode of said first and second electrodes.5. The method for welding a Si-based material according to claim 4, further comprising:providing means for improving a directionality of said arc. 6. The method for welding a Si-based material according to claim 1, further comprising:providing means for improving a directionality of said arc. 7. The method for welding a Si-based material according to claim 6, wherein said arc directionality means includes a raised portion on a central surface portion of one of said first and second electrodes and projecting toward a other of said first and second electrodes.8. The method for welding a Si-based material according to claim 1, wherein:following said generating step, a length of said arc is gradually extended prior to bringing said Si-based material proximal said arc column.