초록 ▼

Improved microelectromechanical systems (MEMS), processes and apparatus using thermocompression bonding are disclosed. For example, process embodiments are disclosed in which wafer-scale as well as die-scale thermocompression bonding is utilized to encapsulate MEMS and/or to provide electrical inter

Improved microelectromechanical systems (MEMS), processes and apparatus using thermocompression bonding are disclosed. For example, process embodiments are disclosed in which wafer-scale as well as die-scale thermocompression bonding is utilized to encapsulate MEMS and/or to provide electrical interconnections with MEMS. Apparatus embodiments include apparatus for performing thermocompression bonding and bonded hybrid structures manufactured in accordance with the process embodiments. Devices having various substrate bonding and/or sealing configurations variously offer the advantage of reduced size, higher manufacturing yields, reduced costs, improved reliability, improved compatibility with existing semiconductor manufacturing process and/or greater versatility of applications.

대표청구항 ▼

1. An integrated device, comprising:a first substrate; a first device disposed on the first substrate and having at least one electrical terminal; a first feature of conductive bonding material disposed on the first substrate and surrounding the first device; a bump of conductive bonding material wi

1. An integrated device, comprising:a first substrate; a first device disposed on the first substrate and having at least one electrical terminal; a first feature of conductive bonding material disposed on the first substrate and surrounding the first device; a bump of conductive bonding material within the first feature disposed on the first substrate, the bump being in electrical contact with the terminal of the first device; a second substrate which is in aligned confronting relation to the first substrate; a second device disposed on the second substrate, the second device having at least one terminal; a second feature of conductive bonding material disposed on the second substrate and at least partially congruent with the first feature; and a target feature of conductive bonding material disposed within the second feature of conductive bonding material and in electrical contact with the terminal of the second device, wherein the first and second substrates are thermocompression bonded together in aligned confronting relation and the first feature is bonded to the second feature forming a sealed cavity enclosing the first device and the bump is bonded to the target feature to thereby electrically couple the first device and the second device. 2. The integrated device of claim 1, wherein the first feature of bonding material has a minimum height of about 2 microns.3. The integrated device of claim 1, wherein the first and second features of bonding material are rings, the bonds between the first and second rings are thermocompression bonds, at least one of the first or second rings is plastically deformed, the bond between the bump and the target feature is a thermocompression bond, and at least one of the bump or target feature is plastically deformed and the bump is smaller than 10,000 square microns in area.4. The integrated device of claim 1, wherein the bonding material contains barrier adhesion layers and at least one noble metal from the group of noble metals including gold, platinum, rhodium, palladium, and iridium.5. The integrated device of claim 1, wherein the first device disposed on the first substrate is a microelectromechanical device and the second device is an integrated circuit, and wherein the bonding process does not heat the second substrate to a temperature above 400 degrees Celsius.6. The integrated device of claim 1, wherein the target feature and at least one of the bonding features are disposed on the first substrate and the bump and at least one of the bonding features are disposed on the second substrate.7. The integrated device of claim 1, wherein the bonding does not involve heating either substrate during bonding.8. An integrated device, comprising:a first substrate; a device disposed on the first substrate having at least one electrical terminal; a bump of conductive bonding material disposed on the first substrate, the bump being in electrical contact with the at least one terminal of the device; a bonding feature of conductive material disposed on the first substrate and surrounding at least a portion of the device; a second substrate in aligned confronting relation to the first substrate; a first target feature of conductive bonding material disposed on the second substrate and bonded to the bump on the first substrate; and a second target feature of conductive bonding material disposed on the second substrate and bonded to the bonding feature on the first substrate, forming a sealed cavity containing at least a portion of the device, wherein the second target feature is electrically isolated from the bump. 9. The integrated device of claim 8, wherein the bond between the bonding feature and the second target feature is a thermocompressive bond or at least one of the bonding and target features is plastically deformed.10. The integrated device of claim 8, wherein the first and second target features are disposed on the first substrate, and wherein the bonding feature and bump are disposed on the second substrate.11. An integrated device, comprising:a first substrate; a device disposed on the first substrate; a first bonding feature made of conductive bonding material disposed on the first substrate; a bump of conductive bonding material disposed on the first substrate, the bump being in electrical contact with the device; a second substrate substantially aligned in confronting relation to the first substrate; a second bonding feature made of conductive bonding material disposed on the second substrate; a target feature made of conductive bonding material disposed on the second substrate; and a wirebond pad disposed on the second substrate and electrically connected to the target feature, wherein the first substrate and the second substrate are pressed together with a thermocompression bonding process, the bonding process bonding the first bonding feature disposed on the first substrate to the second bonding feature disposed on the second substrate, sealing the device in a cavity between the first substrate and the second substrate, the bonding process forming an electrical connection between the device and the target feature. 12. The integrated device of claim 11, wherein the first bonding feature is a seal ring and the second bonding feature is at least partially congruent with the seal ring.13. The integrated device of claim 12, wherein the target feature is electrically isolated from the seal ring.14. The integrated device of claim 12, wherein the seal ring is selected from a group of shapes consisting of: a shape that encloses and seals a cavity, a shape that encloses a cavity but partially seals the cavity, and a shape that encloses and seals a cavity in combination with an additional sealing means.15. The integrated device of claim 12, wherein the seal ring or the second bonding feature is plastically deformed after bonding.16. The integrated device of claim 12, wherein the seal ring is reduced by about twenty-five percent after bonding.17. The integrated device of claim 12, wherein a portion of the seal ring has a height less than about 50 microns after bonding.18. The integrated device of claim 11, wherein the wirebond pad is outside the sealed cavity, and the bump is in the sealed cavity and electrically connected to the wirebond pad with a trace of conductive bonding material, wherein the trace of conductive bonding material is electrically isolated from the second bonding feature.19. The integrated device of claim 11, wherein the wirebond pad is electrically connected to the device via the target feature.20. The integrated device of claim 18, wherein the conductive trace is at least 0.5 micron in height.21. The integrated device of claim 18, wherein the conductive trace is at least about 1 micron in height.22. The integrated device of claim 18, wherein the first bonding feature is a seal ring which has a height that is less than about 100 microns after bonding and is electrically isolated from the conductive trace.23. The integrated device of claim 11, wherein the bonding process heats the first substrate and the second substrate to a temperature that does not exceed 400 degrees Celsius.24. The integrated device of claim 11, wherein the bonding process does not heat the first substrate or the second substrate.25. The integrated device of claim 11, wherein the bonding process is a wafer scale bonding process.26. The integrated device of claim 11, wherein the percentage of area bonded is less than fifteen percent of the first substrate.27. The integrated device of claim 11, wherein the percentage of area bonded is less than fifteen percent of the second substrate.28. The integrated device of claim 11, wherein the bump and the target feature are sized to reduce parasitic capacitance between the device and the target feature.29. The integrated device of claim 11, wherein the bump is less than about 10,000 square microns in area after bonding.30. The integrated device of claim 11, wherein at least one dimension of the bump is less than about 50 microns after bonding.31. The integrated device of claim 11, wherein the bump is at least 2 microns high after bonding.32. The integrated device of claim 11, wherein the bump is plastically deformed after bonding.33. The integrated device of claim 11, wherein the height of the deformed bump is less than about ¾ of its height before bonding.34. The integrated device of claim 11, wherein the conductive bonding material includes at least one noble metal from the group of noble metals including gold, platinum, palladium, iridium and rhodium.35. The integrated device of claim 11, wherein the conductive bonding material includes barrier/adhesion layers and at least one noble metal from the group of noble metals including gold, platinum, palladium, iridium and rhodium.36. The integrated device of claim 21, wherein the first and second bonding features include non-conductive bonding materials.37. The integrated device of claim 11, wherein at least one of the bump and the first bonding feature are disposed on the second substrate and at least one of the second bonding feature and the target feature are disposed on the first substrate.38. An integrated device, comprising:a first substrate; a seal ring of conductive bonding material disposed on the first substrate including barrier adhesion layers and at least one noble metal from the group of noble metals including gold, platinum, palladium, iridium and rhodium, disposed on the first substrate; a device disposed on the first substrate; a bump of conductive bonding material disposed on the first substrate electrically connected to the device, wherein the percentage of area bonded is either less than 15 percent of the total surface area of the first substrate or less than 15 percent of the total surface area of the second substrate; a second substrate substantially aligned in confronting relation to the first substrate; a target feature of conductive bonding material disposed on the second substrate; a bonding feature made of conductive bonding material including barrier adhesion layers and at least one noble metal from the group of noble metals including gold, platinum, palladium, iridium and rhodium; and a wirebond pad disposed on the second substrate outside the bonding feature and electrically connected to the target feature via a trace of conductive bonding material, wherein the bonding feature overlaps the trace, and wherein the bonding feature and the trace are electrically isolated by a nonconductive material, and wherein the first substrate and the second substrate are pressed together with a thermocompression bonding process, the bonding process bonding the seal ring disposed on the first substrate to the bonding feature disposed on the second substrate, and the bonding process forming a sealed cavity between the first and the second substrates containing the device, wherein the device is electrically connected to the wirebond pad and isolated from the seal ring. 39. The integrated device of claim 38, wherein the first substrate and the second substrate are not heated during bonding.40. The integrated device of claim 39, wherein at least one of the seal ring and the bump are disposed on the second substrate and at least one of the bonding feature and target feature are disposed on the first substrate.41. The integrated device of claim 39, wherein the bonding process does not heat the first substrate and the second substrate to a temperature above 400 degree Celsius.