[특허]Magnetoresistance effect element

[미국특허] Magnetoresistance effect element 원문보기

IPC분류정보
국가/구분	United States(US) Patent 등록
국제특허분류(IPC7판)	G11B-005/39
출원번호	US-0944075 (2001-09-04)
우선권정보	JP-0269099 (2000-09-05); JP-0268934 (2000-09-05)
발명자 / 주소	Fukuzawa, Hideaki Koi, Katsuhiko Fuke, Hiromi Tomita, Hiroshi Iwasaki, Hitoshi Sahashi, Masashi
출원인 / 주소	Kabushiki Kaisha Toshiba
대리인 / 주소	Oblon, Spivak, McClelland, Maier &
인용정보	피인용 횟수 : 34 인용 특허 : 8

초록 ▼

There are provided a magnetoresistance effect element, a magnetic head, a magnetic head assembly and a magnetic recording system, which have high sensitivity and high reliability. The magnetoresistance effect element has two ferromagnetic layers, a non-magnetic layer provided between the ferromagnetic layers, and a layer containing an oxide or nitride as a principal component, wherein the layer containing the oxide or nitride as the principal component contains a magnetic transition metal element which does not bond to oxygen and nitrogen and which is at least one of Co, Fe and Ni.

대표청구항 ▼

1. A magnetoresistance effect element comprising:two ferromagnetic layers, one of the two ferromagnetic layers being a magnetization fixed layer having a magnetization direction substantially fixed to one direction, and the other ferromagnetic layer being a magnetization free layer having a magnetization direction varying in response to an external magnetic field; a non-magnetic layer provided between the ferromagnetic layers; and a layer containing an oxide as a principal component containing a magnetic transition metal element which does not bond to oxygen and which is at least one of Co, Fe and Ni, and contacting an opposite surface of the magnetization free layer to the non-magnetic layer via a second non-magnetic layer, the magnetoresistance effect element having a resistance varying in response to a relative angle between the magnetization direction of the magnetization fixed layer and the magnetization direction of the magnetization free layer. 2. A magnetoresistance effect element as set forth in claim 1, wherein a total thickness of the magnetization free layer and the second non-magnetic layer is in the range of from 2 nm to 4 nm.3. A magnetoresistance effect element comprising a spin-valve film, the spin valve film including:a magnetization fixed layer having a ferromagnetic layer having a magnetization direction substantially fixed to one direction; a magnetization free layer having a ferromagnetic layer having a magnetization direction varying in response to an external magnetic field, the magnetization fixed layer and the magnetization free layer being configured to receive a current which flows in a direction parallel to the surfaces of the magnetization fixed layer and the magnetization free layer; a non-magnetic intermediate layer provided between the magnetization fixed layer and the magnetization free layer, and being made of metal; a high conductive layer having a higher conductivity than those of the magnetization fixed layer and the magnetization free layer, being stacked on one side of the magnetization free layer remoter from the non-magnetic intermediate layer; and a non-magnetic crystalline layer provided on one side of the high conductive layer remoter from the magnetization free layer, and containing a compound of an element, which is different from the principal element constituting the high conductive layer, as a principal component, the non-magnetic crystalline layer being substantially non-magnetic and being substantially crystalline.

이 특허에 인용된 특허 (8) 인용/피인용 타임라인 분석

Tan Minshen ; Tan Swie-In, Deposition of insulating thin film by a plurality of ion beams.
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Hardayal Singh Gill, GMR design with nano oxide layer in the second anti-parallel pinned layer.
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Sakakima, Hiroshi; Sugita, Yasunari; Satomi, Mitsuo; Kawawake, Yasuhiro; Hiramoto, Masayoshi; Matsukawa, Nozomu, Magnetoresistance effect element and method for producing the same, and magnetoresistance effect type head, magnetic recording apparatus, and magnetoresistance effect memory element.
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Knapp Kenneth E. ; Rottmayer Robert E. ; Ryan Francis, Magnetoresistive read sensor including a carbon barrier layer and method for making same.
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Kyusik Sin ; Yingjian Chen ; Ningja Zhu ; Bill Crue, Magnetoresistive sensor having hard biased current perpendicular to the plane sensor.
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Kamiguchi Yuzo,JPX ; Saito Akiko,JPX ; Koui Katsuhiko,JPX ; Yoshikawa Masatoshi,JPX ; Yuasa Hiromi,JPX ; Fukuzawa Hideaki,JPX ; Hashimoto Susumu,JPX ; Iwasaki Hitoshi,JPX ; Yoda Hiroaki,JPX ; Sahashi, Multi-layered thin-film functional device and magnetoresistance effect element.
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Gill Hardayal Singh, Read head with dual tunnel junction sensor.
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Mao, Sining; Gao, Zheng; Chen, Jian; Murdock, Edward Stephens, Spin valve sensors with an oxide layer utilizing electron specular scattering effect.
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이 특허를 인용한 특허 (34) 인용/피인용 타임라인 분석

Nagasaka,Keiichi; Seyama,Yoshihiko; Oshima,Hirotaka; Shimizu,Yutaka; Tanaka,Atsushi, CPP magnetoresistive effect element and magnetic storage device having a CPP magnetoresistive effect element.
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Hanawa,Hiroji; Tanaka,Tsutomu; Collins,Kenneth S.; Al Bayati,Amir; Ramaswamy,Kartik; Nguyen,Andrew, Chemical vapor deposition plasma process using an ion shower grid.
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Hanawa, Hiroji; Tanaka, Tsutomu; Collins, Kenneth S.; Al-Bayati, Amir; Ramaswamy, Kartik; Nguyen, Andrew, Chemical vapor deposition plasma reactor having plural ion shower grids.
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Choi,Kyung Ku; Murase,Taku; Yamazaki,Yohtaro, High frequency magnetic thin film, composite magnetic thin film and magnetic device using them.
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Fukuzawa, Hideaki; Fuji, Yoshihiko; Yuasa, Hiromi; Iwasaki, Hitoshi, Magnetic recording element including a thin film layer with changeable magnetization direction.
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Fuji, Yoshihiko; Fukuzawa, Hideaki; Yuasa, Hiromi, Magneto-resistance effect element.
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Fuke, Hiromi; Hashimoto, Susumu; Takagishi, Masayuki; Iwasaki, Hitoshi, Magneto-resistance effect element, magnetic head, magnetic recording/reproducing device and method for manufacturing a magneto-resistance effect element.
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Fukuzawa,Hideaki; Koi,Katsuhiko; Fuke,Hiromi; Tomita,Hiroshi; Iwasaki,Hitoshi; Sahashi,Masashi, Magnetoresistance effect element.
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Fukuzawa,Hideaki; Kamiguchi,Yuzo; Koui,Katsuhiko; Nakamura,Shin ichi; Iwasaki,Hitoshi; Saito,Kazuhiro; Fuke,Hiromi; Yoshikawa,Masatoshi; Hashimoto,Susumu; Sahashi,Masashi, Magnetoresistance effect element, magnetic head, and magnetic storage system using a giant magnetoresistance effect element.
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Fukuzawa,Hideaki; Kamiguchi,Yuzo; Koui,Katsuhiko; Nakamura,Shin ichi; Iwasaki,Hitoshi; Saito,Kazuhiro; Fuke,Hiromi; Yoshikawa,Masatoshi; Hashimoto,Susumu; Sahashi,Masashi, Magnetoresistance effect element, magnetic head, magnetic head assembly, magnetic storage system.
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Fukuzawa,Hideaki; Kamiguchi,Yuzo; Koui,Katsuhiko; Nakamura,Shin ichi; Iwasaki,Hitoshi; Saito,Kazuhiro; Fuke,Hiromi; Yoshikawa,Masatoshi; Hashimoto,Susumu; Sahashi,Masashi, Magnetoresistance effect element, magnetic head, magnetic head assembly, magnetic storage system.
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Fukuzawa, Hideaki; Yuasa, Hiromi; Fuke, Hiromi; Iwasaki, Hitoshi; Sahashi, Masashi, Magnetoresistance effect element, magnetic head, magnetic reproducing apparatus, and magnetic memory.
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Fukuzawa, Hideaki; Yuasa, Hiromi; Fuke, Hiromi; Iwasaki, Hitoshi; Sahashi, Masashi, Magnetoresistance effect element, magnetic head, magnetic reproducing apparatus, and magnetic memory.
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Fukuzawa,Hideaki; Yuasa,Hiromi; Fuke,Hiromi; Iwasaki,Hitoshi; Sahashi,Masashi, Magnetoresistance effect element, magnetic head, magnetic reproducing apparatus, and magnetic memory.
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Fukuzawa,Hideaki; Yuasa,Hiromi; Fuke,Hiromi; Iwasaki,Hitoshi; Sahashi,Masashi, Magnetoresistance effect element, magnetic head, magnetic reproducing apparatus, and magnetic memory.
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Fukuzawa, Hideaki; Yuasa, Hiromi; Fuji, Yoshihiko; Iwasaki, Hitoshi, Magnetoresistive effect element and manufacturing method thereof.
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Fuji, Yoshihiko; Fukuzawa, Hideaki; Yuasa, Hiromi, Magnetoresistive element having free and/or pinned layer magnetic compound expressed by M1M2O.
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Yuasa, Hiromi; Fukuzawa, Hideaki; Fuji, Yoshihiko; Iwasaki, Hitoshi, Method for manufacturing magnetoresistance effect element.
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Yamamoto,Yoshiaki, Method of fabricating semiconductor device.
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Fuke, Hiromi; Hashimoto, Susumu; Takagishi, Masayuki; Iwasaki, Hitoshi, Method of manufacturing magnetoresistive element, magnetoresistive element, magnetic head assembly and magnetic recording apparatus.
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Seino,Yuriko; Sato,Yasuhiko; Onishi,Yasunobu, Pattern forming method, underlayer film forming composition, and method of manufacturing semiconductor device.
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Zhang, Kunliang; Wang, Shengyuan; Zhao, Tong; Li, Min; Wang, Hui-Chuan, Pinning field in MR devices despite higher annealing temperature.
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Fukuzawa, Hideaki; Yuasa, Hiromi; Fuke, Hiromi; Iwasaki, Hitoshi; Sahashi, Masashi, Tunnel barrier sensor with multilayer structure.
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Mikhael, Michael G.; Yializis, Angelo, Ultra-bright passivated aluminum nano-flake pigments.
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[미국특허] Magnetoresistance effect element 원문보기

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