초록 ▼

Disclosed herein is a process for producing a narrow titanium-containing wire, comprising steps of:(i) providing a structure comprising a substrate having a titanium-containing surface and a porous layer containing narrow pores extending towards the surface; and(ii) forming narrow titanium-containin

Disclosed herein is a process for producing a narrow titanium-containing wire, comprising steps of:(i) providing a structure comprising a substrate having a titanium-containing surface and a porous layer containing narrow pores extending towards the surface; and(ii) forming narrow titanium-containing wires in the respective narrow pores by heat treatment of the structure obtained in the step (i).

대표청구항 ▼

1. A process for producing a structure comprising steps of:(i) providing a substrate having a surface consisting essentially of at least one of titanium and a titanium alloy and a porous layer containing narrow pores extending toward the surface; and (ii) growing wires from a portion of the substrat

1. A process for producing a structure comprising steps of:(i) providing a substrate having a surface consisting essentially of at least one of titanium and a titanium alloy and a porous layer containing narrow pores extending toward the surface; and (ii) growing wires from a portion of the substrate in the respective pores by heat treatment of the structure obtained in step (i). 2. The process according to claim 1, wherein the step (i) comprises sub-steps of:(a) forming an aluminum-containing film on the substrate; and (b) anodically oxidizing the aluminum-containing film to form the porous layer. 3. The process according to claim 1, wherein the step (ii) comprises a sub-step of conducting the heat treatment of the structure at a temperatures ranging from 500° C. to 900° C. under an atmosphere containing water vapor of at least 1 Pa.4. The process according to claim 1, wherein the step (ii) comprises a sub-step of conducting the heat treatment of the structure at a temperature ranging from 500° C. to 900° C. under an atmosphere containing water vapor of at least 1 Pa and hydrogen.5. The process according to claim 1, wherein said pores reach said surface.6. The process according to claim 1, wherein said heat treatment is conducted under a gas atmosphere containing a gas selected from the group consisting of hydrogen, oxygen, nitrogen, a hydrocarbon, SiH4, B2H5, PH3, Al(C2H5)3 and Fe(CO)5.7. The process according to claim 6, wherein said wires are formed by a reaction of said surface with the gas of said gas atmosphere.8. The process according to claim 1, wherein a diameter of said wires is less than a diameter of said pores.9. The process according to claim 1, further comprising a step of removing said porous layer after the step (ii).10. The process according to claim 1, further comprising a step of separating only said wires from said structure after the step (ii).11. A process for producing a device having an electrode comprising the steps of:i) providing a member having a porous region obtained by anodic oxidation; and ii) growing wires from a portion of the substrate comprising titanium or a titanium alloy in respective pores of the porous region by a heat treatment under an atmosphere containing a hydrocarbon, wherein a layer with which voltage can be applied between the layer and said electrode is provided under the porous region of said member. 12. The process according to claim 11, wherein said heat treatment is conducted at a temperature ranging from 500° C. to 900° C.13. The process according to claim 11, wherein a diameter of a pore is from 5 nm to 500 nm.14. The process according to claim 11, wherein the porous region is formed by anodically oxidizing an aluminum-containing layer.15. The process according to claim 11, wherein the porous region is subjected to a pore-widening treatment after said anodic oxidation.16. The process according to claim 11, wherein a bottom of the pores of the porous region reaches the layer.17. The process according to claim 11, wherein said member is obtained by a process comprising the steps of forming the layer on a substrate and forming the porous region on the layer.18. The process according to claim 11, wherein said electrode is an anode and said device is an electron-emitting device.19. A process for producing a structure comprising the steps of:(i) preparing a substrate having a layer containing at least one pore, wherein the pore penetrates the layer; and (ii) forming a wire in the pore by a heat treatment of the structure obtained in step (i), wherein the wire is made of (a) a material from the substrate, which said material comprises titanium or a titanium alloy and (b) a material from a gas.