Components for vacuum deposition apparatus and vacuum deposition apparatus therewith, and target apparatus
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
C23C-016/00
C23C-014/34
출원번호
US-0926041
(2000-12-28)
우선권정보
JP-0375687 (1999-12-28); JP-0375686 (1999-12-28)
국제출원번호
PCT/JP00/09379
(2001-08-20)
§371/§102 date
20010820
(20010820)
국제공개번호
WO01/48260
(2001-07-05)
발명자
/ 주소
Sato, Michio
Nakamura, Takashi
Yabe, Yoichiro
출원인 / 주소
Kabushiki Kaisha Toshiba
대리인 / 주소
Oblon, Spivak, McClelland, Maier &
인용정보
피인용 횟수 :
25인용 특허 :
2
초록▼
A component for a vacuum deposition apparatus comprises a component body and a spray deposit formed on a surface of a component body. A spray deposit has surface roughness in which a mean spacing S of tops of local peak of profile is in the range from 50 to 150 μm, and distances to a bottom of profi
A component for a vacuum deposition apparatus comprises a component body and a spray deposit formed on a surface of a component body. A spray deposit has surface roughness in which a mean spacing S of tops of local peak of profile is in the range from 50 to 150 μm, and distances to a bottom of profile valley line Rv and to a top of profile peak line are in the ranges from 20 to 70 μm, respectively. Furthermore, a spray deposit has a low hardness coat selected from an Al base spray deposit of Hv 30 (Vickers hardness) or less, a Cu base spray deposit of Hv 100 or less, a Ni base spray deposit of Hv 200 or less, a Ti base spray deposit of Hv 300 or less, a Mo base spray deposit of Hv 300 or less and a W base spray deposit of Hv 500 or less. Such component for a vacuum deposition apparatus may suppress, with stability and effectiveness, peeling of deposition material adhering on a component during deposition. In addition, the number of apparatus cleaning and of exchange of components may be largely reduced. A target comprises a similar spray deposit. A vacuum deposition apparatus is one in which above component for a vacuum deposition apparatus is applied in a holder of a sample to be deposited, a deposition material source holder, a preventive component and so on.
대표청구항▼
1. A component of a vacuum deposition apparatus, comprising:a component body; and a spray deposit coated on a surface of the component body and having surface roughness in which a mean spacing S of tops of local peak of profile is in a range from 50 to 150 μm, a distance from a mean line to a bottom
1. A component of a vacuum deposition apparatus, comprising:a component body; and a spray deposit coated on a surface of the component body and having surface roughness in which a mean spacing S of tops of local peak of profile is in a range from 50 to 150 μm, a distance from a mean line to a bottom of profile valley line Rv is in a range from 20 to 70 μm, and a distance from a mean line to a top of profile peak line Rp is in a range from 20 to 70 μm, wherein a difference in distance between the top of profile peak line Rp and the bottom of profile valley line Rv (Rp-Rv) is in a range from ?11 to 6 μm so that a film adhered on the surface of the spray deposit grows with a stable columnar structure. 2. The component as set forth in claim 1:wherein the spray deposit comprises a coat comprising metal of which thermal expansion coefficient is different by 15×10?6/K or less from that of a material deposited by the vacuum deposition apparatus. 3. The component as set forth in claim 1:wherein the spray deposit comprises a coat comprising metal of which thermal expansion coefficient is different by 20×10?6/K or less from that of the component body. 4. The component as set forth in claim 1:wherein the spray deposit comprises coats of two or more layers of different materials. 5. The component as set forth in claim 4:wherein the spray deposit comprises a stress relief layer formed on the component body and comprising at least one of Al, Cu, or Ni or alloys of Al, Cu, or Ni, and a thermal expansion relief layer formed on the stress relief layer and comprising metal of which thermal expansion coefficient is different by 10×10?6/K or less from that of a material deposited by the vacuum deposition apparatus. 6. The component as set forth in claim 1:wherein the spray deposit comprises at least one coat selected from an Al base spray deposit of Vickers hardness of Hv 30 or less, a Cu base spray deposit of Vickers hardness of Hv 100 or less, a Ni base spray deposit of Vickers hardness of Hv 200 or less, a Ti base spray deposit of Vickers hardness of Hv 300 or less, a Mo base spray deposit of Vickers hardness of Hv 300 or less, and a W base spray deposit of Vickers hardness of Hv 500 or less. 7. The component as set forth in claim 1:wherein the spray deposit has a thickness in the range from 50 to 500 μm. 8. The component as set forth in claim 1:wherein the mean spacing S of tops of local peak of profile is more than 100 μm. 9. The component as set forth in claim 1:wherein the mean spacing S of tops of local peak of profile is 107 μm or more. 10. A vacuum deposition apparatus, comprising:a vacuum chamber; a sample holder holding a sample to be deposited and disposed in the vacuum chamber; a deposition material source disposed in the vacuum chamber facing to the sample holder; a source holder holding the deposition material source; and a preventive component disposed in the surroundings of the sample holder or the source holder; wherein at least one selected from the sample holder, the source holder and the preventive component comprises the component for a vacuum deposition apparatus set forth in claim 1. 11. The vacuum deposition apparatus as set forth in claim 10:wherein the spray deposit formed on the surface of the component for a vacuum deposition apparatus comprises a coat containing at least one of metal forming the deposition material source. 12. The vacuum deposition apparatus as set forth in claim 10:wherein the deposition apparatus is a sputtering apparatus. 13. A target apparatus, comprising:a target body; and a spray deposit coated on a non-erosion area of the target body and having surface roughness in which a mean spacing S of tops of local peak of profile is in a range from 50 to 150 μm, a distance from a mean line to a bottom of profile valley line Rv is in a range from 20 to 70 μm, and a distance from a mean line to a top of profile peak line Rp is in a range from 20 to 70 μm, wherein a difference in distance between the top of profile peak line Rp and the bottom of profile valley line Rv (Rp-Rv) is in a range from ?11 to 6 μm so that a film adhered on the surface of the spray deposit grows with a stable columnar structure. 14. The target apparatus as set forth in claim 13:wherein the mean spacing S of tops of local peak of profile is more than 100 μm. 15. The target apparatus as set forth in claim 13:wherein the mean spacing S of tops of local peak of profile is 107 μm or more. 16. A target apparatus, comprising:a target; and a backing plate comprising a backing plate body holding the target, and a spray deposit coated on a surface of the backing plate body and having surface roughness in which a mean spacing S of tops of local peak of profile is in a range from 50 to 150 μm, a distance from a mean line to a bottom of profile valley line Rv is in a range from 20 to 70 μm, and a distance from a mean line to a top of profile peak line Rp is in a range from 20 to 70 μm, wherein a difference in distance between the top of profile peak line Rp and the bottom of profile valley line Rv (Rp-Rv) is in a range from ?11 to 6 μm so that a film adhered on the surface of the spray deposit grows with a stable columnar structure. 17. The target apparatus as set forth in claim 16:wherein the mean spacing S of tops of local peak of profile is more than 100 μm. 18. The target apparatus as set forth in claim 16:wherein the mean spacing S of tops of local peak of profile is 107 μm or more.
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이 특허에 인용된 특허 (2)
Bang Won ; Chen Chen-An, Coating for parts used in semiconductor processing chambers.
Miller, Steven A.; Kumar, Prabhat; Wu, Richard; Sun, Shuwei; Zimmermann, Stefan; Schmidt-Park, Olaf, Fine grained, non banded, refractory metal sputtering targets with a uniformly random crystallographic orientation, method for making such film, and thin film based devices and products made therefrom.
Volchko, Scott Jeffrey; Zimmermann, Stefan; Miller, Steven A.; Stawovy, Michael Thomas, Methods of manufacturing high-strength large-area sputtering targets.
Shekhter, Leonid N.; Miller, Steven A.; Haywiser, Leah F.; Wu, Rong-Chein R., Process for preparing metal powders having low oxygen content, powders so-produced and uses thereof.
Shekhter, Leonid N.; Miller, Steven A.; Haywiser, Leah F.; Wu, Rong-Chein Richard, Process for preparing metal powders having low oxygen content, powders so-produced and uses thereof.
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