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An electronic device containing a polythiophene wherein R is an alkyl alkoxy; x represents the number of R groups; R′ is CF3, alkoxy, alkyl, or optionally alkylene; y and z represent the number of segments; and a and b represent the mole fractions of each moiety, respectively, wherein the sum of a+b

An electronic device containing a polythiophene wherein R is an alkyl alkoxy; x represents the number of R groups; R′ is CF3, alkoxy, alkyl, or optionally alkylene; y and z represent the number of segments; and a and b represent the mole fractions of each moiety, respectively, wherein the sum of a+b is equal to about 1.

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1. An electronic device comprised of a polythiophene wherein R is an alkyl, alkoxy; x represents the number of R groups; R′ is CF3, alkoxy, alkyl, or optionally alkylene; y and z represent the number of segments; and a and b represent the mole fractions of each moiety, respectively, wherein the sum

1. An electronic device comprised of a polythiophene wherein R is an alkyl, alkoxy; x represents the number of R groups; R′ is CF3, alkoxy, alkyl, or optionally alkylene; y and z represent the number of segments; and a and b represent the mole fractions of each moiety, respectively, wherein the sum of a+b is equal to about 1.2. An electronic device in accordance with claim 1 wherein R is alkyl with from about 6 to about 15 carbon atoms; R′ is CF3; y is 0 to about 3, and z is from about 1 to about 5.3. An electronic device in accordance with claim 1 wherein R is selected from the group consisting of pentyl, pentyloxy, hexyl, hexyloxy, heptyl, heptyloxy, octyl, octyloxy, nonyl, nonyloxy, decyl, decyloxy undecyl, undecyloxy, dodecyl, and dodecyloxy.4. An electronic device in accordance with claim 1 wherein x is 2, and two of said R substituents form an integral cyclic structure with said thiophene moiety.5. An electronic device in accordance with claim 1 wherein R′ is CF3; y is from about 1 to about 3, and z is from about 1 to about 5.6. An electronic device in accordance with claim 1 wherein a is from 0 to about 0.95, and b is from about 0.05 to about 1.7. An electronic device in accordance with claim 1 wherein the number average molecular weight (Mn) of said polythiophene is from about 2,000 to about 100,000, and the weight average molecular weight (Mw) is from about 4,000 to about 500,000, each measured by gel permeation chromatography using polystyrene standards.8. An electronic device in accordance with claim 1 wherein said polythiophene is of the alternative formulas 9. An electronic device in accordance with claim 1 wherein x is 1, or wherein x is 2.10. An electronic device in accordance with claim 1 wherein R′ is an alkylene.11. An electronic device in accordance with claim 1 wherein a is from about 0.05 to about 1.12. An electronic device in accordance with claim 1 wherein b is from about 0.25 to about 0.75.13. A thin film transistor in accordance with claim 1 wherein x is 1 or 2; R′ is CF3; a is from about 0.25 to about 0.75, and y is from about 0.75 to about 0.25.14. A thin film transistor comprised of a substrate, a gate electrode, a gate dielectric layer, a source electrode and a drain electrode, and in contact with the source/drain electrodes and the gate dielectric layer a layer comprised of a polythiophene (I) wherein R is an alkyl or alkoxy; x represents the number of R groups; R′ is CF3, alkoxy, or alkyl; y and z represent the number of repeating segments; and a and b represent the mole fractions of each segment.15. A thin film transistor in accordance with claim 14 wherein said polythiophene (I) possesses a number average molecular weight (Mn) of from about 2,000 to about 100,000; and a weight average molecular weight (Mw) of from about 4,000 to over 500,000, both Mw and Mn being measured by gel permeation chromatography using polystyrene standards.16. A thin film transistor in accordance with claim 14 wherein R is alkyl or alkoxy selected from the group consisting of methyl methoxy, ethyl, ethoxy, propyl, propoxy, butyl, butoxy, pentyl, pentyloxy, hexyl, hexyloxy, heptyl, heptyloxy, octyl, octyloxy, nonyl, nonyloxy, decyl, decyloxy undecyl, undecyloxy, dodecyl, dodecyloxy, and isomeric forms thereof.17. A thin film transistor in accordance with claim 14 wherein R is alkyl or alkoxy selected from the group consisting of pentyloxy, hexyl, hexyloxy, heptyl, heptyloxy, octyl, octyloxy, nonyl, nonyloxy, decyl, decyloxy undecyl, undecyloxy, dodecyl, and dodecyloxy.18. A thin film transistor in accordance with claim 14 wherein x is 2, and said two R substituents form an integral cyclic structure with the thiophene moiety.19. A thin film transistor in accordance with claim 14 wherein R′ is selected from the group consisting of methyl, ethyl, propyl, butyl, pentyl, hexyl, heptyl, octyl, nonyl, decyl, undecyl, dodecyl, and isomeric forms thereof.20. A thin film transistor in accordance with claim 14 wherein R′ is alkyl.21. A thin film transistor in accordance with claim 14 wherein R is alkyl with from about 6 to about 15 carbon atoms; R′ is CF3; y is 0 to about 3, and z is from about 1 to about 5.22. A thin film transistor in accordance with claim 14 wherein R′ is CF3; y is from about 1 to about 3, and z is from about 1 to about 5.23. A thin film transistor in accordance with claim 14 wherein a is from 0 to about 0.95; b is from about 0.05 to about 1, and the sum of a plus b is equal to 1.24. A thin film transistor in accordance with claim 14 wherein said substrate is a polyester, a polycarbonate, or a polyimide; said gate source and drain electrodes are each independently comprised of gold, nickel, aluminum, platinum, indium titanium oxide, or a conductive polymer, and said gate dielectric layer is comprised of silicon nitride or silicon oxide.25. A thin film transistor in accordance with claim 14 wherein said substrate is a polyester, a polycarbonate, or a polyimide, and said gate, source and drain electrodes are fabricated from the organic conductive polymer polystyrene sulfonate-doped poly(3,4-ethylene dioxythiophene) or from a conductive ink/paste compound of a colloidal dispersion of silver in a polymer binder, and the gate dielectric layer is organic polymer or inorganic oxide particle-polymer composite.26. A thin film transistor in accordance with claim 14 containing said polythiophene of the following alternative formulas or encompassed by said formulas, and wherein a and b represent the mole fractions of each moiety, respectively, 27. An electronic device in accordance with claim 26 wherein a is from about 0.05 to about 1.28. A thin film transistor in accordance with claim 14 and of the formulas, and wherein a and b represent the mole fractions of each moiety, respectively, and wherein the sum of a+b is equal to about 1 29. A thin film transistor in accordance with claim 14 and of the following formulas, and wherein a and b represent the mole fractions of each moiety, respectively, and wherein the sum of a+b is equal to about 1 30. An electronic device in accordance with claim 14 wherein a is from about 0.25 to about 0.75.31. An electronic device comprised of a substrate, a gate electrode, a source electrode, and a polythiophene wherein R is an alkyl; x is the number of R groups, R′ is CF3; y and z represent the number of segments; and a and b represent the mole fractions of each moiety.