초록 ▼

A bipolar transistor includes a collector that is selected from the group SiC and SiC polytypes (4H, 6H, 15R, 3C . . . ), a base that is selected from the group Si, Ge and SiGe, at least a first emitter that is selected from the group Si, SiGe, SiC, amorphous-Si, amorphous-SiC and diamond-like carbo

A bipolar transistor includes a collector that is selected from the group SiC and SiC polytypes (4H, 6H, 15R, 3C . . . ), a base that is selected from the group Si, Ge and SiGe, at least a first emitter that is selected from the group Si, SiGe, SiC, amorphous-Si, amorphous-SiC and diamond-like carbon, and at least a second emitter that is selected from the group Si, SiGe, SiC, amorphous-Si, amorphous-SiC and diamond-like carbon. Direct-wafer-bonding is used to assemble the bipolar transistor. In an embodiment the bandgap of the collector, the bandgap of the at least a first emitter and the bandgap of the at least a second emitter are larger than the bandgap of the base.

대표청구항 ▼

1. A bipolar transistor comprising:a collector selected from one or more of the group SiC, (4H, 6H, 15R, 3C . . . ); a base selected from one or more of the group Si, Ge and SiGe; an emitter selected from one or more of the group Si, SiGe, SiC, amorphous-Si, amorphous-SiC and diamond-like carbon; an

1. A bipolar transistor comprising:a collector selected from one or more of the group SiC, (4H, 6H, 15R, 3C . . . ); a base selected from one or more of the group Si, Ge and SiGe; an emitter selected from one or more of the group Si, SiGe, SiC, amorphous-Si, amorphous-SiC and diamond-like carbon; and a sub-collector selected from one or more of the group SiC, (4H, 6H, 15R, 3C . . . ). 2. The bipolar transistor of claim 1 wherein at east one of a first interface between said collector and said base and a second interface between said base and said emitter is a direct-wafer-bonded interface.3. The bipolar transistor of claim 1 wherein at least one of a first interface between said collector and said base, a second interface between said base and said emitter, and a third interface between said collector and said sub-collector is a direct-wafer-bonded interface.4. The bipolar transistor of claim 1 wherein said emitter is Si, said base is Si, and said collector is SiC.5. The bipolar transistor of claim 4 wherein at least one of a first interface between said SiC collector and said Si base and a second interface between said Si base and said Si emitter is a direct-wafer-bonded interface.6. The bipolar transistor of claim 1 wherein said sub-collector is SiC, said collector is SiC, and said base is Si and wherein at least one of a first interface between said SiC sub-collector and said SiC collector, a second interface between said SiC collector and said Si base, and a third interface between said Si base and said Si emitter is a direct-wafer-bonded interface.7. The bipolar transistor of claim 1 wherein said emitter is Si, said base is Ge, and said collector is SiC.8. The bipolar transistor of claim 7 wherein at least one of a first interface between said SiC collector and said Ge base and a second interface between said Ge base and said Si emitter is a direct-wafer-bonded interface.9. The bipolar transistor of claim 1 wherein bandgap of said collector and a bandgap of said emitter are larger than a bandgap of said base.10. The bipolar transistor of claim 9 wherein at least one of a first interface between said collector and said base and a second interface between said base and said emitter is a direct-wafer-bonded interface.11. The bipolar transistor of claim 10 further including:a sub-collector selected from one or more of the group SiC and SiC polytypes (4H, 6H, 3C, 15R . . . ). 12. The bipolar transistor of claim 11 wherein at least one of a first interface between said collector and said base, a second interface between said base and said emitter, and a third interface between said collector and said sub-collector are a direct-wafer-bonded interface.13. The bipolar transistor of claim 1 wherein said emitter is SiGe, said base is SiGe, and said collector is SiC.14. The bipolar transistor of claim 13 wherein bandgap of said emitter is greater than a bandgap of said base.15. A bipolar transistor comprising:a collector selected from the group SiC and SiC polytypes (4H, 6H, 15R, 3C . . . ), said collector having a collector-surface; a base selected from the group Si, Ge and SiGe, said base having first base-surface engaging said collector-surface, and said base having a second base-surface; at least a first emitter selected from the group Si, SiGe, SiC, amorphous-Si, amorphous-SiC and diamond-like carbon engaging said second base-surface: and at least a second emitter selected from the group Si, SiGe, SiC, amorphous-Si, amorphous-SiC and diamond-like carbon, said second emitter being space from said at least a first emitter, and said at least a second emitter engaging said second base-surface. 16. The bipolar transistor of claim 15 wherein at least one of a first interface between said collector-surface and said first base-surface, second interface between said second base-surface and said at least a first emitter, an a third interface between said second base-surface and said at least a second emitter is a direct-wafer-bonded interface.17. The bipolar transistor of claim 15 wherein a bandgap of said collector, a bandgap of said at least a first emitter and a bandgap of said at least a second emitter are larger than a bandgap of said base.18. The bipolar transistor of claim 17 wherein at least one of a first interface between said collector-surface and said first base-surface, a second interface between said second base-surface and said at least a first emitter, an a third interface between said second base-surface and said at least a second emitter is a direct-wafer-bonded interface.19. A heterojunction comprising:a first semiconductor layer selected from the group Si and SilGel-x; said first semiconductor layer having a top surface and a bottom surface; a first SiC layer; said first SiC layer having a top surface and a bottom surface; a direct-wafer-bonded interface between said bottom surface of said first semiconductor layer and said top surface of said SiC layer; a Si layer; said Si layer having a top surface and a bottom surface; a direct-wafer-bonded interface between said top surface of said first semiconductor layer and said bottom surface of said Si layer; a second SiC layer; said second SiC layer having a top surface and a bottom surface; and a direct-wafer-bonded interface between said bottom surface of said first SiC layer and said top surface of said second SiC layer. 20. A bipolar transistor comprising:a collector selected from one or more of the group SiC, (4H, 6H, 15R, 3C . . . ); a base selected from one or more of the group Si, Ge and SiGe; an emitter selected from one or more of the group Si, SiGe, SiC, amorphous-Si, amorphous-SiC and diamond-like carbon; and a SiC sub-collector. 21. The bipolar transistor of claim 20 wherein the collector is SiC, the base is Si, and the emitter is Si and wherein at least one of a first interface between said SiC sub-collector and said SiC collector, a second interface between said SiC collector and said Si base, and a third interface between said Si base and said Si emitter is a direct-wafer-bonded interface.22. A bipolar transistor comprising:a SiC collector; a Ge base; and an Si emitter. 23. The bipolar transistor of claim 22 wherein at least one of a first interface between said SiC collector and said Ge base and a second interface between said Ge base and said Si emitter is a direct-wafer-bonded interface.24. The bipolar transistor of claim 23 further including:a SiC sub-collector. 25. A bipolar transistor comprising:a SiC collector; a base selected from one or more of the group Ge and SiGe; and an emitter selected from one or more of the group Si, SiGe, SiC, amorphous-Si, amorphous-SiC, and diamond-like carbon. 26. The bipolar transistor of claim 25 wherein at least one of a first interface between said SiC collector and said base and a second interface between said base and said emitter is a direct-wafer-bonded interface and wherein the base comprises Si.27. The bipolar transistor of claim 25 further including:a SiC sub-collector. 28. The bipolar transistor of claim 27 wherein at least one of a first interface between said SiC sub-collector and said SiC collector, a second interface between said SiC collector and said base, and a third interface between said base and said emitter is a direct-wafer-bonded interface.29. The bipolar transistor of claim 25 wherein the base comprises Ge.30. A bipolar transistor comprising:a SiC collector; a base selected from one or more of the group Si, Ge and SiGe; and an emitter selected from one or more of the group SiGe, amorphous-Si, amorphous-SiC, and diamond-like carbon. 31. The bipolar transistor of claim 30 wherein at least one of a first interface between said SiC collector and said base and a second interface between said base and said emitter is a direct-wafer-bonded interface and wherein the base comprises Si.32. The bipolar transistor of claim 30 further including:a SiC sub-collector. 33. The bipolar transistor of claim 32 wherein at least one of a first interface between said SiC sub-collector and said SiC collector, a second interface between said SiC collector and said base, and a third interface between said base and said emitter is a direct-wafer-bonded interface.34. The bipolar transistor of claim 30 wherein the bas comprises Ge.35. The bipolar transistor of claim 30 wherein the emitter comprises Si.36. The bipolar transistor of claim 30 wherein the emitter is SiGe.37. The bipolar transistor of claim 30 wherein the emitter comprises carbon.38. The bipolar transistor of claim 30 wherein the base is positioned between the emitter and the collector.39. The bipolar transistor of claim 30 wherein the emitter is amorphous-SiC.40. The bipolar transistor of claim 30 wherein the emitter is diamond-like carbon.41. A bipolar transistor comprising:a collector selected from one or more of the group SiC, (4H, 6H, 15R, 3C . . . ); a base selected from one or more of the group Si, Ge and SiGe; an emitter selected from one or more of the group Si, SiGe, SiC, amorphous-Si, amorphous-SiC and diamond-like carbon, wherein a bandgap of said collector and a bandgap of said emitter are larger than a bandgap of said base and wherein at least one of a first interface between said collector and said base and a second interface between said base and said emitter is a direct-wafer-bonded interface; and a sub-collector selected from one or more of the group SiC and SiC polytypes (4H, 6H, 3C, 15R . . . ). 42. The bipolar transistor of claim 41 wherein at least one of a first interface between said collector and said base, a second interface between said base and said emitter, and a third interface between said collector and said sub-collector are a direct-wafer-bonded interface.43. A bipolar transistor comprising:a SiC collector; an SiGe base; and an SiGe emitter. 44. The bipolar transistor of claim 43 wherein a bandgap of said emitter is greater than a bandgap of said base.