IPC분류정보
국가/구분 |
United States(US) Patent
등록
|
국제특허분류(IPC7판) |
|
출원번호 |
US-0507964
(2000-02-22)
|
발명자
/ 주소 |
|
출원인 / 주소 |
|
대리인 / 주소 |
Schwegman, Lundberg, Woessner &
|
인용정보 |
피인용 횟수 :
14 인용 특허 :
86 |
초록
▼
Methods of providing foamed polynorbornene insulating material for use with an integrated circuit device, as well as apparatus and systems making use of such foamed polynorbornene insulating materials. The methods include forming a layer of polynorbornene material and converting at least a portion o
Methods of providing foamed polynorbornene insulating material for use with an integrated circuit device, as well as apparatus and systems making use of such foamed polynorbornene insulating materials. The methods include forming a layer of polynorbornene material and converting at least a portion of the layer of polynorbornene material to a foamed polynorbornene material, such as by exposing the layer of polynorbornene material to a supercritical fluid. The foamed polynorbornene material can provide electrical insulation between conductive layers of the integrated circuit device.
대표청구항
▼
1. A method of forming an insulating material for use in an integrated circuit, the method comprising:forming a layer of polynorbornene material on a substrate of the integrated circuit; and converting at least a portion of the layer of polynorbornene material to a foamed polynorbornene material suc
1. A method of forming an insulating material for use in an integrated circuit, the method comprising:forming a layer of polynorbornene material on a substrate of the integrated circuit; and converting at least a portion of the layer of polynorbornene material to a foamed polynorbornene material such that the foamed polynorbornene material contacts a gate of a transistor in the integrated circuit. 2. The method of claim 1, wherein converting at least a portion of the layer of polynorbornene material to a foamed polynorbornene material comprises exposing at least a portion of the polynorbornene material to a supercritical fluid.3. The method of claim 2, wherein the supercritical fluid is carbon dioxide.4. The method of claim 1, wherein converting at least a portion of the layer of polynorbornene material to a foamed polynorbornene material comprises saturating the polynorbornene material with a fluid at or above the critical point of the fluid in a process chamber, and subsequently depressurizing the process chamber.5. The method of claim 1, wherein converting at least a portion of the layer of polynorbornene material to a foamed polynorbornene material comprises converting at least a portion of the layer of polynorbornene material to a foamed polynorbornene material having a maximum cell size of less than about 3.0 microns.6. The method of claim 1, wherein converting at least a portion of the layer of polynorbornene material to a foamed polynorbornene material comprises converting at least a portion of the layer of polynorbornene material to a foamed polynorbornene material having a maximum cell size of less than about 1.0 micron.7. The method of claim 3, wherein converting at least a portion of the layer of polynorbornene material to a foamed polynorbornene material comprises converting at least a portion of the layer of polynorbornene material to a foamed polynorbornene material having a maximum cell size of less than about 0.1 micron.8. The method of claim 1, further comprising:removing a portion of the foamed polynorbornene material, thereby forming at least one opening in the foamed polynorbornene material; and forming a conductive layer in at least one opening in the foamed polynorbornene material. 9. The method of claim 8, wherein forming a conductive layer comprises forming a metal line.10. The method of claim 9, wherein the metal line is formed of a metal selected from the group consisting of aluminum, copper, gold, silver, tungsten and alloys containing at least one of aluminum, copper, gold, silver and tungsten.11. The method of claim 8, further comprising:removing a portion of the conductive layer. 12. The method of claim 1 wherein removing a portion of the conductive layer comprises removing a portion of the conductive layer by chemical-mechanical planarization.13. The method of claim 8, wherein removing a portion of the foamed polynorbornene material further comprises:patterning the foamed polynorbornene material, thereby forming exposed portions of the foamed polynorbornene material; and etching the exposed portions of the foamed polynorbornene material, thereby forming the at least one opening. 14. The method of claim 13, wherein etching comprises etching using an oxygen plasma.15. The method of claim 1, wherein forming a layer of polynorbornene material comprises forming a layer of a polynorbornene material having approximately 0.1 to 0.2% weight loss per hour isothermal at approximately 300° C.16. The method of claim 1, wherein the method is performed in the order presented.17. A method of forming an insulating material for use in an integrated circuit, the method comprising:forming a layer of polynorbornene material on a substrate of the integrated circuit, the polynorbornene material in contact with an active region of the integrated circuit; saturating the layer of polynorbornene material with a fluid at or above the critical point of the fluid in a process chamber; and depressurizing the process chamber, thereby converting at least a portion of the layer of polynorbornene material to a foamed polynorbornene material. 18. The method of claim 17, wherein the method is performed in the order presented.19. A method of forming an insulating material for use in an integrated circuit, the method comprising:forming a layer of polynorbornene material on a substrate of the integrated circuit the polynorbornene material in contact with an active region of the integrated circuit; saturating the layer of polynorbornene material with carbon dioxide at or above the critical point of the carbon dioxide in a process chamber; and depressurizing the process chamber, thereby converting at least a portion of the layer of polynorbornene material to a foamed polynorbornene material. 20. The method of claim 19, wherein converting at least a portion of the layer of polynorbornene material to a foamed polynorbornene material comprises converting at least a portion of the layer of polynorbornene material to a foamed polynorbornene material having a maximum cell size of less than about 3.0 microns.21. The method of claim 19, wherein converting at least a portion of the layer of polynorbornene material to a foamed polynorbornene material comprises converting at least a portion of the layer of polynorbornene material to a foamed polynorbornene material having a maximum cell size of less than about 1.0 micron.22. The method of claim 19, wherein converting at least a portion of the layer of polynorbornene material to a foamed polynorbornene material comprises converting at least a portion of the layer of polynorbornene material to a foamed polynorbornene material having a maximum cell size of less than about 0.1 micron.23. A method of forming a portion of an integrated circuit device, the method comprising:forming a layer of polynorbornene material on a substrate of an integrated circuit, the polynorbornene material in contact with an active region of the integrated circuit; saturating the layer of polynorbornene material with a fluid at or above the critical point of the fluid in a process chamber; depressurizing the process chamber, thereby converting at least a portion of the layer of polynorbornene material to a foamed polynorbornene material; removing a portion of the foamed polynorbornene material, thereby forming at least one opening in the foamed polynorbornene material; and forming a conductive layer in at least one opening in the foamed polynorbornene material. 24. The method of claim 23, wherein the method is performed in the order presented.25. A method of forming a portion of an integrated circuit device, the method comprising:forming a layer of polynorbornene material on a substrate of an integrated circuit, the polynorbornene material in contact with an active region of the integrated circuit; saturating the layer of polynorbornene material with a fluid at or above the critical point of the fluid in a process chamber; depressurizing the process chamber, thereby converting at least a portion of the layer of polynorbornene material to a foamed polynorbornene material; patterning the layer of foamed polynorbornene material, thereby forming exposed portions of the layer of foamed polynorbornene material; etching the exposed portions of the layer of foamed polynorbornene material, thereby forming at least one opening in the foamed polynorbornene material; and forming a conductive layer in at least one opening in the foamed polynorbornene material. 26. The method of claim 25, wherein the method is performed in the order presented.27. A method of forming a portion of an integrated circuit device, the method comprising:forming a layer of polynorbornene material on a substrate of an integrated circuit, the polynorbornene material in contact with an active region of the integrated circuit; saturating the layer of polynorbornene material with a fluid at or above the critical point of the fluid in a process chamber; depressurizing the process chamber, thereby converting at least a portion of the layer of polynorbornene material to a foamed polynorbornene material; patterning the layer of foamed polynorbornene material, thereby forming exposed portions of the layer of foamed polynorbornene material; etching the exposed portions of the layer of foamed polynorbornene material using an oxygen plasma, thereby forming at least one opening in the foamed polynorbornene material; and forming a conductive layer in at least one opening in the foamed polynorbornene material. 28. The method of claim 27, wherein the method is performed in the order presented.29. A method of forming a portion of an integrated circuit device, the method comprising:forming an active area in a substrate of an integrated circuit; forming a layer of polynorbornene material overlying and contacting the active area; saturating the layer of polynorbornene material with a fluid at or above the critical point of the fluid in a process chamber; depressurizing the process chamber, thereby converting at least a portion of the layer of polynorbornene material to a foamed polynorbornene material; patterning the foamed polynorbornene material, thereby forming exposed portions of the foamed polynorbornene material; etching the exposed portions of the foamed polynorbornene material, thereby forming a contact hole to the active area; and forming a conductive layer in the contact hole. 30. The method of claim 29, wherein the method is performed in the order presented.31. A method of forming a portion of an integrated circuit device, the method comprising:forming a first layer of polynorbornene material on and in contact with an active area of an integrated circuit device in a substrate of an integrated circuit; converting at least a portion of the first layer of polynorbornene material to a first foamed polynorbornene material; forming a first conductive layer to contact the active area of the integrated circuit device; forming a second layer of polynorbornene material on the first conductive layer; saturating the second layer of polynorbornene material with a fluid at or above the critical point of the fluid in a process chamber; depressurizing the process chamber, thereby converting at least a portion of the second layer of polynorbornene material to a second foamed polynorbornene material; removing a portion of the second foamed polynorbornene material, thereby forming at least one via to the first conductive layer; and forming a second conductive layer in the at least one via to couple to the first conductive layer. 32. The method of claim 31, wherein the method is performed in the order presented.33. A method of forming a portion of an integrated circuit device, the method comprising:forming a first layer of polynorbornene material on and in contact with an active area of an integrated circuit device in a substrate of an integrated circuit; converting at least a portion of the first layer of polynorbornene material to a first foamed polynorbornene material; forming a first conductive layer to contact the active area of the integrated circuit device; forming a second layer of polynorbornene material on the first conductive layer; saturating the second layer of polynorbornene material with a fluid at or above the critical point of the fluid in a process chamber; depressurizing the process chamber, thereby converting at least a portion of the second layer of polynorbornene material to a second foamed polynorbornene material; patterning the foamed polynorbornene material, thereby forming exposed portions of the second foamed polynorbornene material; etching the exposed portions of the second foamed polynorbornene material, thereby forming at least one via to the first conductive layer; and forming a second conductive layer in the at least one via to couple to the first conductive layer. 34. The method of claim 33, wherein the method is performed in the order presented.35. A method of forming an insulating material for use in an integrated circuit, the method comprising:forming a layer of polynorbornene material on a substrate of the integrated circuit, the polynorbornene material in contact with an active region of the integrated circuit; and converting at least a portion of the layer of polynorbornene material to a foamed polynorbornene material by exposing at least a portion of the polynorbornene material to a supercritical fluid; wherein the supercritical fluid comprises at least one fluid selected from the group consisting of ammonia, an amine, an alcohol, water, carbon dioxide, nitrous oxide, a noble gas, a hydrogen halide, boron trichloride, chlorine, fluorine, oxygen, nitrogen, a hydrocarbon, a fluorocarbon and hexafluoroacetylacetone. 36. A method comprising:forming a layer of polynorbornene material on and in contact with an active area in a substrate of an integrated circuit; and converting at least a portion of the layer of polynorbornene material to a foamed polynorbornene material. 37. The method of claim 36, wherein converting at least a portion of the layer of polynorbornene material to a foamed polynorbornene material comprises exposing at least a portion of the polynorbornene material to a supercritical fluid.38. The method of claim 37, wherein the supercritical fluid includes carbon dioxide.39. The method of claim 36, wherein converting at least a portion of the layer of polynorbornene material to a foamed polynorbornene material comprises saturating the polynorbornene material with a fluid at or above the critical point of the fluid in a process chamber, and subsequently depressurizing the process chamber.40. The method of claim 36, wherein converting at least a portion of the layer of polynorbornene material to a foamed polynorbornene material comprises converting at least a portion of the layer of polynorbornene material to a foamed polynorbornene material having a maximum cell size of less than about 3.0 microns.41. The method of claim 36, wherein converting at least a portion of the layer of polynorbornene material to a foamed polynorbornene material comprises converting at least a portion of the layer of polynorbornene material to a foamed polynorbornene material having a maximum cell size of less than about 1.0 micron.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.