초록 ▼

An organic semiconductor device (11) can be embedded within a printed wiring board (10). In various embodiments, the embedded device (11) can be accompanied by other organic semiconductor devices (31) and/or passive electrical components (26). When so embedded, conductive vias (41, 42, 43) can be us

An organic semiconductor device (11) can be embedded within a printed wiring board (10). In various embodiments, the embedded device (11) can be accompanied by other organic semiconductor devices (31) and/or passive electrical components (26). When so embedded, conductive vias (41, 42, 43) can be used to facilitate electrical connection to the embedded device. In various embodiments, specific categories of materials and/or processing steps are used to facilitate the making of organic semiconductors and/or passive electrical components, embedded or otherwise.

대표청구항 ▼

1. A device comprising:a substrate comprised of electrically insulating material; an organic semiconductor device embedded within the substrate, wherein the organic semiconductor device comprises a first electrode and a second electrode, which first and second electrodes are separated at least by a

1. A device comprising:a substrate comprised of electrically insulating material; an organic semiconductor device embedded within the substrate, wherein the organic semiconductor device comprises a first electrode and a second electrode, which first and second electrodes are separated at least by a dielectric comprising a ceramic filled polymer material comprising a photoimageable dielectric-ceramic composite polymer material. 2. The device of claim 1 wherein the substrate is comprised of a glass reinforced composite.3. The device of claim 1 wherein the substrate is comprised of a plurality of laminated layers of electrically insulating material.4. The device of claim 3 wherein the organic semiconductor device is disposed on at least one of the plurality of laminated layers of electrically insulating material.5. The device of claim 1 and further comprising a passive electrical component that is embedded within the substrate.6. The device of claim 5 wherein the organic semiconductor device and the passive electrical component are electrically coupled to one another.7. The device of claim 1 wherein the substrate includes at least one via providing electrically conductive access to the organic semiconductor device.8. The device of claim 1 and further comprising a plurality of organic semiconductor devices embedded within the substrate.9. The device of claim 1 wherein the ceramic filled polymer material has a thickness of approximately 5 to 15 microns.10. The device of claim 1 wherein the ceramic filled polymer comprises an epoxy base mixed with perovskite particles.11. The device of claim 10 wherein at least some of the perovskite particles comprise barium titanate.12. The device of claim 11 wherein at least a substantial number of the perovskite particles range in size from approximately 0.2 to 5 micrometers.13. The device of claim 1 and further comprising a third electrode, wherein the second and third electrodes are separated from the first electrode by the dielectric.14. A device comprising:a substrate comprised of electrically insulating material; an organic semiconductor device embedded within the substrate, wherein the organic semiconductor device comprises a first electrode and a second electrode, which first and second electrodes are separated at least by a dielectric wherein the dielectric material comprises a thin-film perovskite material. 15. The device of claim 14 wherein the thin-film perovskite material comprises a lead zirconate titanate-based material.16. The device of claim 15 wherein the thin-film perovskite material is donor-doped.17. The device of claim 16 wherein the thin-film perovskite material is donor-doped with lanthanum.18. The device of claim 15 wherein the thin-film perovskite material is acceptor-doped.19. The device of claim 18 wherein the thin-film perovskite material is acceptor-doped with calcium.20. The device of claim 14 wherein the thin-film perovskite material has a thickness of approximately 0.3 to 2.0 micrometers.21. The device of claim 20 wherein the thin-film perovskite material has a thickness of approximately 0.5 to 1.0 micrometer.