초록 ▼

The sputter target has a composition selected from the group consisting of high-purity copper and copper-base alloys. The sputter target's grain structure is at least about 99 percent recrystallized; and the sputter target's face has a grain orientation ratio of at least about 10 percent each of (11

The sputter target has a composition selected from the group consisting of high-purity copper and copper-base alloys. The sputter target's grain structure is at least about 99 percent recrystallized; and the sputter target's face has a grain orientation ratio of at least about 10 percent each of (111), (200), (220) and (311). In addition, the sputter target has a grain size of less than about 10 μm for improving sputter uniformity and reducing sputter target arcing.

대표청구항 ▼

1. A sputter target, the sputter target having a composition selected from the group consisting of high-purity copper and copper-base alloys; a grain structure, the grain structure being at least about 99 percent recrystallized; a sputter target face, the sputter target face having a grain orientati

1. A sputter target, the sputter target having a composition selected from the group consisting of high-purity copper and copper-base alloys; a grain structure, the grain structure being at least about 99 percent recrystallized; a sputter target face, the sputter target face having a grain orientation ratio of at least about 10 percent each of (111), (200), (220) and (311); and a grain size of less than about 10 μm for improving sputter uniformity and reducing arcing during sputtering.2. The sputter target of claim 1 wherein the sputter target has a monoblock structure.3. The sputter target of claim 1 wherein the sputter target has a purity of at least 99.99 weight percent and a yield strength of at least about 140 Mpa as measured at room temperature.4. The sputter target of claim 1 wherein the sputter target face has a grain orientation ratio of at least about 15 percent each of (111)), (200), (220) and (311).5. The sputter target of claim 4 wherein the sputter target has a purity of at least 99.99 weight percent.6. A sputter target, the sputter target having a composition selected from the group consisting of high-purity copper and copper-base alloys; a grant structure, the grain structure being at least about 99 percent recrystallized; a sputter target face, the sputter target face having a grain orientation ratio of at least about 10 percent each of (111), (200), (220) and (311); and a grain size of less than about 8 μm for improving sputter uniformity and reducing arcing during sputtering.7. The sputter target of claim 6 wherein the sputter target has a monoblock structure.8. The sputter target of claim 6 wherein the sputter target has a purity of at least 99.99 weight percent and a yield strength of at least about 150 Mpa as measured at room temperature.9. The sputter target of claim 6 wherein the sputter target face has a grain orientation ratio of at least about 15 percent each of (111), (200), (220) and (311).10. The sputter target of claim 9 wherein the sputter target has a purity of at least 99.99 weight percent.