[특허]Methods of forming backside connections on a wafer stack

[미국특허] Methods of forming backside connections on a wafer stack 원문보기

IPC분류정보
국가/구분	United States(US) Patent 등록
국제특허분류(IPC7판)	H01L-021/30
출원번호	US-0665824 (2003-09-17)
발명자 / 주소	Morrow, Patrick List, R. Scott Kim, Sarah E.
출원인 / 주소	Intel Corporation
인용정보	피인용 횟수 : 52 인용 특허 : 9

초록 ▼

Various methods of forming backside connections on a wafer stack are disclosed. To form the backside connections, vias are formed in a first wafer that is to be bonded with a second wafer. The vias used for the backside connections are formed on a side of the first wafer along with an interconnect s

대표청구항 ▼

1. A method comprising:forming a first interconnect structure on one side of a first wafer; forming a number of vias, each of the vias extending through the first interconnect structure and into the first wafer; depositing an insulating material in each of the number of vias, the insulating material in each via forming an insulating plug; forming a second interconnect structure over the insulating plugs and the first interconnect structure, wherein each of the insulating plugs extends to one of a number of conductors in the second interconnect structure; bonding the first wafer to a second wafer to form a wafer stack; and thinning an opposing side of the first wafer to expose the insulating plug within each of the vias. 2. The method of claim 1, further comprising performing alignment of the wafer stack using the exposed insulating plugs and vias.3. The method of claim 1, further comprising depositing a layer of dielectric material over the opposing side of the first wafer and the exposed insulating plugs.4. The method of claim 3, further comprising forming a number of other vias, each of the other vias extending through the dielectric layer and one of the insulating plugs, wherein each of the other vias extends to the one conductor in the second interconnect structure associated with the one insulating plug.5. The method of claim 4, further comprising:forming a number of trenches in the dielectric layer, each trench located coincident with one of the other vias; and depositing a conductive material in each of the other vias and each of the trenches, the conductive material in each of the trenches forming a land. 6. The method of claim 5, wherein the conductive material comprises a copper material.7. The method of claim 5, further comprising depositing a connection element on each of the lands.8. The method of claim 5, further comprising continuing deposition of the conductive material to form connection elements proximate at least some of the trenches.9. The method of claim 4, further comprising depositing a conductive material in each of the other vias.10. The method of claim 9, wherein the conductive material comprises a copper material.11. The method of claim 9, further continuing deposition of the conductive material to form connection elements proximate at least some of the other vias.12. The method of claim 1, wherein the insulating material comprises an oxide material.13. The method of claim 12, wherein the insulating material comprises SiO2.14. The method of claim 1, wherein the insulating material comprises one of a nitride material, a carbide material, and a polymer material.15. The method of claim 1, further comprising cutting the wafer stack into a plurality of stacked die.16. The method of claim 15, further comprising packaging one of the stacked die to form a packaged integrated circuit device.17. The method of claim 1, further comprising forming at least one dummy via extending through the first interconnect structure and into the first wafer.

이 특허에 인용된 특허 (9) 인용/피인용 타임라인 분석

Linn Jack H. ; Lowry Robert K. ; Rouse George V. ; Buller James F., Bonded wafer processing with oxidative bonding.
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Pages Irenee (Mesa AZ) D\Aragona Francesco (Scottsdale AZ) Sellers James A. (Tempe AZ) Wells Raymond C. (Scottsdale AZ), Direct wafer bonded structure method of making.
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Field Leslie A. ; Merchant Paul P., Fabrication of single-crystal silicon structures using sacrificial-layer wafer bonding.
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Hays Kenneth M., Method of anodic wafer bonding.
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Vladimir I. Vaganov, Methods for wafer to wafer bonding using microstructures.
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Rostoker Michael D. ; Kapoor Ashok K., Process for forming metal interconnect structures for use with integrated circuit devices to form integrated circuit st.
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Moslehi Mehrdad M. (Dallas TX), SOI/semiconductor heterostructure fabrication by wafer bonding.
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Moslehi Mehrdad M. (Dallas TX), SOI/semiconductor heterostructure fabrication by wafer bonding of polysilicon to titanium.
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Jae Myun Kim KR, Wafer level stack package and method of fabricating the same.
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이 특허를 인용한 특허 (52) 인용/피인용 타임라인 분석

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Stark, David H, Insulated glazing units.
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Chang, Hung-Pin; Hsu, Kuo-Ching; Chen, Chen-Shien; Chiou, Wen-Chih; Yu, Chen-Hua, Isolation structure for stacked dies.
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Stark, David H., Wafer-level hermetic micro-device packages.
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[미국특허] Methods of forming backside connections on a wafer stack 원문보기

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이 특허를 인용한 특허 (52) 인용/피인용 타임라인 분석

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[미국특허] Methods of forming backside connections on a wafer stack 원문보기

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