Methods and apparatus are provided for forming a metal or metal silicide layer by an electroless deposition technique. In one aspect, a method is provided for processing a substrate including depositing an initiation layer on a substrate surface, cleaning the substrate surface, and depositing a cond
Methods and apparatus are provided for forming a metal or metal silicide layer by an electroless deposition technique. In one aspect, a method is provided for processing a substrate including depositing an initiation layer on a substrate surface, cleaning the substrate surface, and depositing a conductive material on the initiation layer by exposing the initiation layer to an electroless solution. The method may further comprise etching the substrate surface with an acidic solution and cleaning the substrate of the acidic solution prior to depositing the initiation layer. The initiation layer may be formed by exposing the substrate surface to a noble metal electroless solution or a borane-containing solution. The conductive material may be deposited with a borane-containing reducing agent. The conductive material may be used as a passivation layer, a barrier layer, a seed layer, or for use in forming a metal silicide layer.
대표청구항▼
1. A method of processing a substrate, comprising:polishing a substrate surface to expose a first conductive material disposed in a dielectric material; depositing an initiation layer on the first conductive material by exposing the substrate surface to a first electroless solution having a pH betwe
1. A method of processing a substrate, comprising:polishing a substrate surface to expose a first conductive material disposed in a dielectric material; depositing an initiation layer on the first conductive material by exposing the substrate surface to a first electroless solution having a pH between about 1 and about 3; removing oxides from the substrate surface; cleaning the substrate surface of the first electroless solution; and depositing a second conductive material on the initiation layer by exposing the initiation layer to a second electroless solution. 2. The method of claim 1, wherein the initiation layer is continuous or non-continuous.3. The method of claim 1, wherein the initiation layer is deposition to a thickness of about 10 Å or less.4. The method of claim 1, wherein the first electroless solution comprises a noble metal salt and an inorganic acid.5. The method of claim 4, wherein the noble metal salt comprises a salt of palladium, platinum, or combinations thereof.6. The method of claim 4, wherein the noble metal salt is selected from the group of a chloride salt, a sulfate salt, sulfamate salt, or combinations thereof, and the inorganic acid is selected from the group of hydrochloric acid, sulfuric acid, hydrofluoric acid, or combinations thereof.7. The method of claim 4, wherein the noble metal salt has a concentration of between about 20 parts per million and about 20 grams per liter of the first electroless solution.8. The method of claim 1, wherein the first conductive material is exposed to the first electroless solution for about 300 seconds or less.9. The method of claim 1, wherein the first conductive material is copper, the initiation layer comprises a noble metal selected from the group of palladium, platinum, and combinations thereof, and the second conductive material comprises cobalt or a cobalt alloy.10. A method of processing a substrate, comprising:polishing a substrate surface to expose copper features formed in a dielectric material; depositing a noble metal selected from the group of palladium, platinum, and combinations thereof, selectively on the exposed copper features by exposing the substrate surface to an acidic electroless solution containing a noble metal salt, an inorganic acid, and having a pH between about 1 and about 3; removing copper oxides from the exposed copper features; cleaning the substrate surface of the acidic electroless solution; and depositing cobalt or cobalt alloy on the noble metal with a cobalt electroless composition. 11. The method of claim 10, wherein the noble metal salt is selected from the group of a chloride salt, a sulfate salt, sulfamate salt, or combinations thereof, and the inorganic acid is selected from the group of hydrochloric acid, sulfuric acid, hydrofluoric acid, or combinations thereof.12. The method of claim 10, wherein the noble metal salt has a concentration of between about 20 parts per million and about 20 grams per liter of the acidic electroless solution.13. The method of claim 10, wherein the first conductive material is exposed to the acidic electroless solution for about 300 seconds or less.14. The method of claim 10, wherein the acidic electroless solution has a temperature of between about 15° C. and about 80° C.15. The method of claim 10, wherein the noble metal salt comprises palladium chloride or palladium sulfate at a concentration of between about 20 parts per million and about 20 grams per liter, and the inorganic acid comprises hydrochloric acid or sulfuric acid aqueous solution, and the acidic electroless solution is applied to the substrate surface for about 300 seconds or less at a temperature between about between about 15° C. and about 80° C.16. The method of claim 10, wherein the initiation layer is deposited continuous or non-continuous to a thickness of about 10Å or less.17. A method of processing a substrate comprising a dielectric material and apertures formed therein, the method comprising:depositing an initiation layer of a conductive material on the dielectric material and apertures formed therein by a first electroless solution comprising a noble metal salt, an inorganic acid, and a pH of about 7 or less; cleaning the substrate surface of the first electroless solution; and depositing a cobalt-containing layer on the initiation layer by a second electroless solution. 18. The method of claim 17, further comprising:depositing a seed layer on the cobalt-containing layer; and depositing a conductive material layer on the seed layer. 19. The method of claim 17, further comprising depositing a conductive material layer on the cobalt-containing layer.20. The method of claim 17, wherein the noble metal salt comprises a salt of palladium, platinum, or combinations thereof.21. The method of claim 17, wherein the noble metal salt is selected from the group of a chloride salt, a sulfate salt, sulfamate salt, or combinations thereof, and the inorganic acid is selected from the group of hydrochloric acid, sulfuric acid, hydrofluoric acid, or combinations thereof.22. The method of claim 17, wherein the noble metal salt has a concentration of between about 20 parts per million and about 20 grams per liter of the first electroless solution.23. The method of claim 17, wherein the dielectric material is exposed to the electroless solution for about 300 seconds or less.24. The method of claim 17, wherein the first electroless solution has a pH between about 1 and about 3.25. The method of claim 17, wherein the noble metal salt comprises palladium chloride or palladium sulfate at a concentration of between about 20 parts per million and about 20 grams per liter, and the inorganic acid comprises hydrochloric acid or sulfuric acid aqueous solution, and the acidic electroless solution is applied to the substrate surface for about 300 seconds or less at a temperature between about between about 15° C. and about 80° C.26. A method of processing a substrate having a conductive silicon-based material disposed thereon with patterned apertures formed therein, the method comprising:depositing an initiation layer on the substrate surface by a first electroless solution comprising a noble metal salt, an inorganic acid, and a pH of about 7 or less; cleaning the substrate surface of the first electroless solution; depositing a first metal material on the initiation layer by exposing the initiation layer to a second electroless solution; and forming a metal silicide layer by reacting the conductive silicon-based material and the first metal layer using one or more annealing processes. 27. The method of claim 26, further comprising depositing a second metal layer on the metal silicide layer.28. The method of claim 26, wherein the noble metal salt comprises a salt of palladium, platinum, or combinations thereof.29. The method of claim 26, wherein the noble metal salt is selected from the group of a chloride salt, a sulfate salt, sulfamate salt, or combinations thereof, and the inorganic acid is selected from the group of hydrochloric acid, sulfuric acid, hydrofluoric acid, or combinations thereof.30. The method of claim 26, wherein the noble metal salt has a concentration of between about 20 parts per million and about 20 grams per liter of the first electroless solution.31. The method of claim 26, wherein the substrate surface is exposed to the electroless solution for about 300 seconds or less.32. The method of claim 26, wherein the first electroless solution has a pH between about 1 and about 3.33. The method of claim 26, wherein the initiation layer comprises a noble metal selected from the group of palladium, platinum, and combinations thereof, and the first metal material comprises cobalt or a cobalt alloy.34. The method of claim 26, wherein the one or more annealing processes comprise annealing the substrate at a temperature between about 300° C. and about 900° C. to form the metal silicide layer.35. The method of claim 26, further comprising etching unreacted first metal after the one or more annealing steps.36.The method of claim 26, wherein a layer of barrier material is deposited on the initiation layer prior to depositing the first metal material.37. The method of claim 26, further comprising treating the substrate surface to remove oxide formation by a hydrofluoric dipping technique or a plasma etch technique.
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