초록 ▼

A cavity forming formed in an encapsulation structure under a vacuum in a vacuum chamber is sealed with a capping layer. A stiff protective layer under tensile stress is deposited on the capping layer prior to venting the vacuum chamber to atmospheric pressure. The capping layer is preferably alumin

A cavity forming formed in an encapsulation structure under a vacuum in a vacuum chamber is sealed with a capping layer. A stiff protective layer under tensile stress is deposited on the capping layer prior to venting the vacuum chamber to atmospheric pressure. The capping layer is preferably aluminum or an aluminum alloy, and the protective layer is preferably δ-TiN having a suitable high Young's modulus.

대표청구항 ▼

1. A method of fabricating a microstructure with a vacuum-sealed cavity, comprising the steps of:fabricating said cavity in an encapsulation structure under a vacuum in a vacuum chamber; sealing said cavity with a capping layer; and depositing a stiff protective layer under tensile stress and having

1. A method of fabricating a microstructure with a vacuum-sealed cavity, comprising the steps of:fabricating said cavity in an encapsulation structure under a vacuum in a vacuum chamber; sealing said cavity with a capping layer; and depositing a stiff protective layer under tensile stress and having a Young's modulus of at least 70 Gpa on said capping layer prior to venting said vacuum chamber to atmospheric pressure. 2. A method as claimed in claim 1, wherein said capping layer is aluminum or an aluminum alloy deposited at a temperature of in the range 100 to 600° C.3. A method as claimed in claim 2, wherein said capping layer is deposited at about 450° C.4. A method as claimed in claim 2, wherein said stiff protective layer is titanium nitride.5. A method as claimed in claim 4, wherein said titanium nitride is deposited at a maximum temperature of about 500° C.6. A method as claimed in claim 5, wherein said titanium nitride is deposited by reactive sputtering.7. A method as claimed in claim 6, wherein said titanium nitride is single phase δ-TiN deposited at a temperature of less than about 400° C.8. A method as claimed in claim 7, wherein the thickness of said titanium nitride layer lies in the range of 0.2 to 10 μm.9. A method as claimed in claim 8, wherein the thickness of said titanium nitride layer lies in the range of 0.2 to 0.7 μm.10. A method as claimed in claim 9, wherein the thickness of said titanium nitride layer is about 0.7 μm.11. A method as claimed in claim 9, wherein the thickness of said aluminum or aluminum alloy layer lies in the range 0.2 to 20 μm.12. A method as claimed in claim 11, wherein the thickness of said aluminum or aluminum alloy layer is about 2.0 μm.13. A method as claimed in claim 1, wherein said capping layer is selected from the group consisting of an aluminum alloy, wherein said aluminum is alloyed with an element selected from the group consisting of copper, silicon, titanium, and palladium.14. A method as claimed in claim 1, wherein said capping layer is selected from the group consisting of copper, gold and silver.15. A method as claimed in claim 1, wherein said capping layer is a flowable dielectric capable of reflow at a temperature of less than about 500° C.16. A method as claimed in claim 15, wherein said capping layer is selected from the group consisting of borosilicates, arsenosilicates, and germanosilicates.17. A method as claimed in claim 1, wherein said cavity is subjected to degassing prior to capping with said capping layer.18. A method as claimed in claim 17, wherein said microstructure is cooled to room temperature after deposition of said protective layer prior to exposure to the atmosphere.19. A method as claimed in claim 1, wherein said protective layer is selected from the group consisting of Titanium aluminonitride, TiAlN; Molybdenum silicide, MoSi2; Titanium carbide, TiC; Silicon carbide, SiC; Tungsten, W; Aluminum nitride, AlN; Titanium aluminide, TiAl; Molybdenum, Mo; Tantalum, Ta; Platinum, Pt; Tungsten silicide, WSi2; Titanium, Ti; Gold, Au.20. A method as claimed in claim 1, wherein said encapsulation structure is polysilicon.21. A method as claimed in claim 1, wherein said encapsulation structure is selected from the group consisting of titanium, titanium nitride, silicon nitride, tungsten, titanium tungsten, or combinations thereof.22. A method of fabricating a microstructure with a vacuum-sealed cavity, comprising the steps of:fabricating said cavity in an encapsulation structure under a vacuum in a vacuum chamber; sealing said cavity with a capping layer of aluminum or aluminum alloy deposited at a maximum temperature of 500° C.; and depositing in-situ a stiff protective layer of titanium nitride under tensile stress at a maximum temperature of 500° C. on said capping layer prior to venting said vacuum chamber to atmospheric pressure. 23. A method as claimed in claim 22, wherein said capping layer is deposited at a temperature of about 450° C.24. A method as claimed in claim 22, wherein said protective layer is single phase δ-titanium nitride.25. A method as claimed in claim 22, wherein said titanium nitride has a tensile stress lower than about 1000 MPa.26. A method as claimed in claim 22, wherein the tensile stress of said titanium nitride is about 300 Mpa.27. A method as claimed in claim 26, wherein said encapsulation structure is polysilicon having a tensile stress of about 300 Mpa.28. A method as claimed in claim 22, wherein said cavity is degassed prior to being sealed with said capping layer.29. A method as claimed 28, wherein said microstructure is cooled to room temperature prior to venting said vacuum chamber to the atmosphere.