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A precursor and method for filling a feature in a substrate. The method generally includes depositing a barrier layer, the barrier layer being formed from pentakis(dimethylamido)tantalum having less than about 5 ppm of chlorine. The method additionally may include depositing a seed layer over the ba

A precursor and method for filling a feature in a substrate. The method generally includes depositing a barrier layer, the barrier layer being formed from pentakis(dimethylamido)tantalum having less than about 5 ppm of chlorine. The method additionally may include depositing a seed layer over the barrier layer and depositing a conductive layer over the seed layer. The precursor generally includes pentakis(dimethylamido)tantalum having less than about 5 ppm of chlorine. The precursor is generated in a canister having a surrounding heating element configured to reduce formation of impurities.

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1. A method of filling one or more features on a substrate, comprisingdepositing a barrier layer on the substrate, the barrier layer being formed from purified pentakis(dimethylamido)tantalum having less than about 5 ppm of chlorine; depositing a seed layer over the bamer layer; and depositing a con

1. A method of filling one or more features on a substrate, comprisingdepositing a barrier layer on the substrate, the barrier layer being formed from purified pentakis(dimethylamido)tantalum having less than about 5 ppm of chlorine; depositing a seed layer over the bamer layer; and depositing a conductive layer over the seed layer. 2. The method of claim 1, further comprising subliming pentakis(dimethylamido)tantalum to remove at least a portion of tantalum oxo amides and form the purified pentakis(dimethylamido)tantalum.3. The method of claim 1, wherein the conductive layer comprises copper.4. The method of claim 1, wherein the barrier layer is formed by atomic layer deposition.5. The method of claim 1, wherein the purified pentakis(dimethylamido)tantalum has less than 5 ppm of a combination of the chlorine and lithium, iron, fluorine, bromine, and iodine.6. The method of claim 1, wherein the barrier layer comprises tantalum nitride.7. The method of claim 1, wherein depositing a barrier layer from purified pentakis(dimethylamido)tantalum results in a conductive layer having fewer defects than a conductive layer formed over a barrier layer formed from unpurified pentakis(dimethylamido)tantalum.8. A method of depositing a tantalum nitride barrier layer on a substrate, comprising:introducing purified pentakis(dimethylamido)tantalum to a processing chamber having a substrate disposed therein to form a tantalum containing layer on the substrate, the purified pentakis(dimethylamido)tantalum having about 5 ppm or less of impurities; and introducing a nitrogen containing compound to the processing chamber to form a nitrogen containing layer on the substrate. 9. The method of claim 8, wherein the substrate has a temperature of from about 20° C. to about 500° C.10. The method of claim 8, wherein the processing chamber has a pressure of about 100 torr or less.11. The method of claim 8, wherein the nitrogen containing compound comprises ammonia gas.12. The method of claim 8, wherein the nitrogen containing compound is selected from the group consisting of ammonia, hydrazine, dimethyl hydrazine, t-butylhydrazine, phenylhydrazine, 2,2-azoisobutane, ethylazide, and combinations and derivatives thereof.13. The method of claim 8, wherein the barrier layer is formed by atomic layer deposition.14. The method of claim 8, wherein the temperature of the substrate is selected so that 50% or more of the barrier layer deposition is by chemisorption.15. The method of claim 8, wherein the purified pentakis(dimethylamido)tantalum is sublimed prior to introduction into the processing chamber.16. The method of claim 8, further comprising removing at least a portion of the pentakis(dimethylamido)tantalum upon formation of the tantalum containing layer on the substrate.17. A purified pentakis(dimethylamido) tantalum having about 5 ppm or less of impurities.18. The purified pentakis(dimethylamido) tantalum of claim 17, wherein the purified pentakis(dimethylamido) tantalum is sublimed to reduce the concentration of tantalum oxo amides therein.19. Apparatus for generating a precursor for a semiconductor processing system, comprising:a canister defining an interior volume having an upper region and a lower region; a precursor material at least partially filling the lower region of the canister; and a gas flow inlet tube adapted to inject a carrier gas into the canister in a direction away from the precursor materials. 20. The apparatus of claim 19, wherein the gas flow inlet tube is adapted to create a non-linear flow of gas into the upper region of the canister.21. The apparatus of claim 20, wherein the non-linear flow is adapted to create an increased saturation level of the gas in the upper region of the canister.22. The apparatus of claim 19, wherein the gas flow inlet tube extends from the upper region of the canister to a lower region of the canister.23. The apparatus of claim 22, wherein the gas flow inlet tube is adapted to provide a first flow of gas into the upper region of the canister.24. The apparatus of claim 22, wherein the gas flow inlet tube is adapted to provide a second flow of gas to the lower region of the canister.25. The apparatus of claim 22, wherein the gas flow inlet tube comprises a restriction.26. The apparatus of claim 25, wherein the gas flow inlet tube comprises at least one opening anterior to the restriction.27. The apparatus of claim 26, wherein the at least one opening is adapted to provide a non-linear flow of gas into the upper region of the canister.28. The apparatus of claim 24, wherein the second flow of gas to the lower region is adapted to maintain a suspension of the precursor materials.29. The apparatus of claim 23, wherein the first flow of gas is adapted to maintain an overall gas flow volume.30. Apparatus for generating a precursor for a semiconductor processing system, comprising:a canister having a sidewall, a top portion and a bottom portion, wherein the canister defines an interior volume having an upper region and a lower region; and a heat transfer medium connecting the upper region to the lower region. 31. The apparatus of claim 30, wherein the heat transfer medium is at least one baffle extending from the upper region to the lower region of the canister.32. The apparatus of claim 30, wherein the heat transfer medium is at least one silo extending from the upper region to the lower region of the canister.