$\require{mediawiki-texvc}$

연합인증

연합인증 가입 기관의 연구자들은 소속기관의 인증정보(ID와 암호)를 이용해 다른 대학, 연구기관, 서비스 공급자의 다양한 온라인 자원과 연구 데이터를 이용할 수 있습니다.

이는 여행자가 자국에서 발행 받은 여권으로 세계 각국을 자유롭게 여행할 수 있는 것과 같습니다.

연합인증으로 이용이 가능한 서비스는 NTIS, DataON, Edison, Kafe, Webinar 등이 있습니다.

한번의 인증절차만으로 연합인증 가입 서비스에 추가 로그인 없이 이용이 가능합니다.

다만, 연합인증을 위해서는 최초 1회만 인증 절차가 필요합니다. (회원이 아닐 경우 회원 가입이 필요합니다.)

연합인증 절차는 다음과 같습니다.

최초이용시에는
ScienceON에 로그인 → 연합인증 서비스 접속 → 로그인 (본인 확인 또는 회원가입) → 서비스 이용

그 이후에는
ScienceON 로그인 → 연합인증 서비스 접속 → 서비스 이용

연합인증을 활용하시면 KISTI가 제공하는 다양한 서비스를 편리하게 이용하실 수 있습니다.

Interferometric endpoint detection in a substrate etching process 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-021/302
출원번호 US-0615159 (2003-07-07)
발명자 / 주소
  • Frum, Coriolan I.
  • Sui, Zhifeng
  • Shan, Hongqing
출원인 / 주소
  • Applied Materials, Inc.
대리인 / 주소
    Janah &
인용정보 피인용 횟수 : 2  인용 특허 : 32

초록

A method of etching a substrate includes placing a substrate in a process zone. The substrate has a material with a thickness, and the material has exposed regions between features of a patterned mask. An etchant gas is introduced into the process zone. The etchant gas is energized to etch the mater

대표청구항

1. A method of etching a substrate, the method comprising:(a) placing a substrate in a process zone, the substrate comprising a material having a thickness; (b) introducing an etchant gas into the process zone; (c) energizing the etchant gas to etch the material; and (d) determining an endpoint of e

이 특허에 인용된 특허 (32)

  1. Flinchbaugh Bruce E. (Dallas TX) Dolins Steven B. (Dallas TX) Srivastava Aditya (Richardson TX) Reese Jon (Waxahachie TX), Apparatus and method for production process diagnosis using dynamic time warping.
  2. Sawin Herbert H. (Arlington MA) Conner William T. (Somerville MA) Dalton Timothy J. (N. Reading MA) Sachs Emanuel M. (Somerville MA), Apparatus and method for real-time measurement of thin film layer thickness and changes thereof.
  3. Coronel Philippe (Massy FRX) Canteloup Jean (Montlhery FRX), Apparatus for monitoring the dry etching of a dielectric film to a given thickness in an integrated circuit.
  4. Christol James T. (Cupertino CA) Burchard John S. (Santa Clara CA), End point detection in etching wafers and the like.
  5. Grimbergen Michael N. ; Lill Thorsten B., Endpoint detection for semiconductor processes.
  6. Collins Kenneth S. ; Rice Michael ; Trow John ; Buchberger Douglas ; Roderick Craig A., Inductively coupled RF plasma reactor having an overhead solenoidal antenna.
  7. Sternheim Marek A. (Livermore CA) van Gelder Willem (Lehighton PA), Interferometric method and apparatus for measuring etch rate and fabricating devices.
  8. Habegger Millard A. (Boulder CO), Interferometric process and apparatus for the measurement of the etch rate of opaque surfaces.
  9. Maydan Dan (Los Altos Hills CA) Somekh Sasson (Redwood City CA) Kaczorowski Edward M. (Santa Clara CA), Laser interferometer system and method for monitoring and controlling IC processing.
  10. Cheng David (San Jose CA) Hartlage Robert P. (Santa Clara CA) Zhang Wesley W. (Burlingame CA), Laser interferometer system for monitoring and controlling IC processing.
  11. Aspnes David Erik (Berkeley Heights NJ), Measurement of thin films by polarized light.
  12. Ye Yan ; Ma Diana Xiaobing ; Yin Gerald Zheyao ; Prasad Keshav ; Siegel Mark ; Mak Steve S. Y. ; Martinez Paul ; Papanu James S. ; Lu Danny Chien, Method and apparatus for cleaning by-products from plasma chamber surfaces.
  13. Latos Thomas S. (Carpentersville IL), Method and apparatus for controlling plasma etching.
  14. Ebbing Peter (Los Altos CA) Birang Manoocher (Santa Clara CA), Method and apparatus for endpoint detection in a semiconductor wafer etching system.
  15. Ebbing Peter (Los Altos CA) Birang Manoocher (Santa Clara CA), Method and apparatus for endpoint detection in a semiconductor wafer etching system.
  16. Auda Bernard (Montlhery FRX), Method and apparatus for in-situ and on-line monitoring of trench formation process.
  17. Maung Sonny (Plano TX) Butler Stephanie W. (Plano TX) Henck Steven A. (Plano TX), Method and apparatus for process endpoint prediction based on actual thickness measurements.
  18. Bobel Friedrich (Uttenreuth DEX) Bauer Norbert (Erlangen DEX), Method and arrangement for determining the layer-thickness and the substrate temperature during coating.
  19. Busta Heinz H. (Park Ridge IL) Lajos Robert E. (Crystal Lake IL) Bhasin Kul B. (Schaumburg IL), Method for end point detection during plasma etching.
  20. Curtis Bernard J. (Gattikon CHX), Method for end point detection in a plasma etching process.
  21. Yu Chorng-Tao (Yorba Linda CA) Isaak Kenneth H. (Tustin CA), Method for film thickness endpoint control.
  22. Sui, Zhifeng; Frum, Coriolan; Yuan, Jie; Hsieh, Chang-Lin, Monitoring substrate processing with optical emission and polarized reflected radiation.
  23. Kleinknecht Hans P. (Bergdietikon CHX) Kane James (Zumikon CHX), Optically monitoring the thickness of a depositing layer.
  24. Schoenborn Philippe (San Jose CA), Plasma etching process control.
  25. Saito Go (Kudamatsu JPX) Yoshigai Motohiko (Hikari JPX) Fujimoto Kenji (Nagareyama JPX), Plasma processing method.
  26. Barna Gabriel G. (Richardson TX) Ratliff Charles (Richardson TX), Process and apparatus for detecting aberrations in production process operations.
  27. Dolins Steven B. (Dallas TX) Srivastava Aditya (Richardson TX) Flinchbaugh Bruce E. (Dallas TX) Gunturi Sarma S. (Richardson TX) Lassiter Thomas W. (Garland TX) Love Robert L. (McKinney TX), Process and apparatus for detecting aberrations in production process operations.
  28. Betz Hans (Berlin DEX) Mader Herman (Unterhaching DEX) Pelka Joachim (Berlin DEX), Process for imaging laserinterferometry and a laserinterferometer for carrying out said process.
  29. Brooks ; Jr. Edward A. (Novato CA) Bithell Roger M. (Novato CA), Process monitor and method thereof.
  30. Booth ; Jr. Robert M. (Wappingers Falls NY) Wasik Chester A. (Poughkeepsie NY), Situ rate and depth monitor for silicon etching.
  31. Mori Katsumi,JPX ; Kondo Takayuki,JPX ; Kaneko Takeo,JPX, Surface emission type semiconductor for laser with optical detector, method of manufacturing thereof, and sensor using t.
  32. Hauser Hugo (Palo Alto CA) Monahan Kevin M. (Mountain View CA), System for detecting a film layer on an object.

이 특허를 인용한 특허 (2)

  1. Fontejon, Jr., Paul Alejon; Gao, Yunxiao; Liu, Yinshi; Shi, Ning, In-situ method to reduce particle contamination in a vacuum plasma processing tool.
  2. Yoshikawa,Toshiyuki; Tsuchiya,Toshio, Wafer processing method.
섹션별 컨텐츠 바로가기

AI-Helper ※ AI-Helper는 오픈소스 모델을 사용합니다.

AI-Helper 아이콘
AI-Helper
안녕하세요, AI-Helper입니다. 좌측 "선택된 텍스트"에서 텍스트를 선택하여 요약, 번역, 용어설명을 실행하세요.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.

선택된 텍스트

맨위로