[미국특허]
Versatile method and system for single mode VCSELs
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
H01L-021/00
H01S-005/187
출원번호
US-0724820
(2000-11-28)
발명자
/ 주소
Johnson, Ralph H.
Morales, Gilberto
출원인 / 주소
Finisar Corporation
대리인 / 주소
Workman Nydegger
인용정보
피인용 횟수 :
6인용 특허 :
157
초록▼
A system and method for providing a single mode VCSEL (vertical cavity surface emitting laser) component (100) is disclosed, comprising a semiconductor substrate (102) having a lower surface and an upper surface, a bottom electrical contact (104) disposed along the lower surface of the substrate, a
A system and method for providing a single mode VCSEL (vertical cavity surface emitting laser) component (100) is disclosed, comprising a semiconductor substrate (102) having a lower surface and an upper surface, a bottom electrical contact (104) disposed along the lower surface of the substrate, a lower mirror (106) formed of n-type material and disposed upon the upper surface of the substrate, an active region (108) having a plurality of quantum wells disposed upon the lower mirror portion, an upper mirror (110) formed from isotropic material and disposed upon the active region, an equipotential layer (112) disposed upon the upper mirror portion, a first upper electrical contact (120) disposed upon the equipotential layer, a second upper electrical contact (122) disposed upon the equipotential layer at a particular distance (124) from the first upper electrical contact, a first isolation region (126) disposed beneath the first upper contact and traversing the equipotential layer, the upper mirror, the active region, and the lower mirror, a second isolation region (128) disposed beneath the second upper contact and traversing the equipotential layer, the upper mirror, the active region, and the lower mirror, and an insulating layer (114, 116) interposed between the upper mirror and the equipotential layer and adapted to form therebetween an aperture (118) of smaller dimension than the particular distance between the first and second upper contacts.
대표청구항▼
1. A method of producing a single mode VCSEL comprising the steps of:forming a VCSEL structure having a substrate, a bottom contact portion disposed below a lower surface of the substrate, a lower mirror portion disposed above an upper surface of the substrate, an active region disposed above the lo
1. A method of producing a single mode VCSEL comprising the steps of:forming a VCSEL structure having a substrate, a bottom contact portion disposed below a lower surface of the substrate, a lower mirror portion disposed above an upper surface of the substrate, an active region disposed above the lower mirror portion, and an upper mirror portion disposed above the active region formed from an electrically isotropic material, the upper mirror portion having layers of a first mobility material and layers of a second mobility material, the first mobility being higher than the second mobility, wherein the layers of the first mobility material are doped less than the layers of the second mobility material except at graded interfaces between the first mobility material and the second mobility material when a doping level at the interfaces is graded so that the resistivity of the upper mirror portion is substantially independent of direction; providing a substantially equipotential layer disposed above the upper mirror portion; providing an electrically insulating layer between the upper mirror portion and the equipotential layer to form an aperture therebetween; and providing an upper contact portion disposed above the equipotential layer. 2. The method of claim 1 wherein the substrate is formed of Gallium Arsenide material.3. The method of claim 1 wherein the lower mirror portion is formed of a p-type material and the upper mirror portion is formed of a n-type material.4. The method of claim 1 wherein the lower mirror portion is formed of a p-type material and the upper mirror portion is formed on a n-type material.5. The method of claim 1 wherein the both the lower and upper mirror portion are formed of n-type material.6. The method of claim 1 wherein the both the lower and upper mirror portions are formed of p-type material.7. The method of claim 1 wherein the step of providing an equipotential layer further comprises providing a layer of material having a resistivity of 0.01 ohm-cm.8. The method of claim 1 wherein the step of providing an equipotential layer further comprises providing a layer of Aluminum Gallium Arsenide.9. The method of claim 1 wherein the insulating layer comprises an oxide.10. The method of claim 9 wherein the insulating layer comprises Al2O3.11. The method of claim 1 wherein the insulating layer comprises air.12. The method of claim 1 wherein the step of providing an equipotential layer further comprises providing a layer of material having electrical conductance greater than the conductance of the upper mirror portion.13. The method of claim 12 wherein the step of providing an equipotential layer further comprises providing a layer of material having conductance at least four times greater than the conductance of the upper mirror portion.14. The method of claim 12 wherein the step of providing an equipotential layer further comprises providing a layer of material having conductance at least ten times greater than the conductance of the upper mirror portion.15. The method of claim 1 wherein the step of forming a VCSEL structure further comprises forming the upper mirror portion of material having a lateral conductance that is substantially similar to the conductance in the vertical direction.16. The method of claim 10 wherein the insulating layer is formed to reduce reflectivity outside the aperture.17. The method of claim 10 wherein the insulating layer is formed to increase effective index outside the aperture and thereby produce a longer resonant wavelength outside the aperture.18. The method of claim 10 wherein the insulating layer is formed to reduce reflectivity and to increase effective index outside the aperture.19. A method of providing anti guide mode selectivity in a VCSEL comprising the steps of:forming a VCSEL structure having a substrate, a bottom contact portion disposed below a lower surface of the substrate, a lower mirror portion disposed above an upper surface of the substrate, an active region disposed above the lower mirror portion, and an upper mirror portion disposed above the active region formed from an isotropic material, the upper mirror portion having layers of a first mobility material and layers of a second mobility material, the first mobility being higher than the second mobility, wherein the layers of the first mobility material are doped less than the layers of the second mobility material except at interfaces between the first mobility material and the second mobility material where a doping level at the interfaces is graded so that the resistivity of the upper mirror portion is substantially independent of direction; providing a substantially equipotential layer disposed above the upper mirror portion; providing an electrically insulating layer between the upper mirror portion and the equipotential layer to form an aperture therebetween, wherein the electrically insulating layer is adapted to provide a greater nominal cavity resonance outside the aperture than inside it; and providing an upper contact portion disposed upon the equipotential layer. 20. A method of producing a single mode VCSEL comprising the steps of:forming a VCSEL structure having a substrate, a bottom contact portion disposal below a lower surface of the substrate, a lower mirror portion disposed above an upper surface of the substrate, and active region disposed above the lower mirror portion, and an upper mirror portion disposed above the active region formed from electrically isotropic material, the upper mirror portion having layers of a first mobility material and layers of a second mobility material, the first mobility being higher than the second mobility, wherein the layers of the first mobility material are doped less than the layers of the second mobility material except at interfaces between the first mobility material and the second mobility material where a doping level at the interfaces is graded so that the resistivity of the upper mirror portion is substantially independent of direction and disposed upon to the active region; providing a substantially equipotential layer disposed above the upper mirror portion; providing an electrically insulating layer between the upper mirror portion and the equipotential layer to form an aperture therebetween, wherein the insulating layer is formed to reduce reflectivity and to increase effective index outside the aperture; and providing an upper contact portion disposed above the equipotential layer. 21. A method for producing an optoelectronic device, the method comprising the steps of:providing a lower mirror portion; providing an active region above the lower mirror portion; providing an upper mirror portion above the active region, the upper mirror portion having layers of higher mobility material and layers of lower mobility material, where the layers of higher mobility material have a lower doping level than the layers of lower mobility material except at graded interfaces between the layers of higher mobility material and the lower mobility where a doping level is heavier than the doping level of the layers of lower mobility material so that the resistivity of the upper mirror portion is substantially independent of direction; providing a substantially equipotential portion above the upper mirror portion; and providing an electrically insulating portion between the upper mirror portion and the equipotential portion, the electrically insulating portion forming an aperture. 22. The method of claim 21 wherein the substantially equipotential portion includes doped AIGaAs.23. The method of claim 21 wherein the substantially equipotential portion has a resistivity of about 0.01 ohm-cm or less.24. The method of claim 21 wherein the substantially equipotential portion providing step includes providing one or more layers of material that have an electrical conductance that is greater than the electrical conductance of the upper mirror portion.25. The method of claim 24 wherein the substantially equipotential portion providing step includes providing one or more layers of material having an electrical conductance that is at least four times the electrical conductance of the upper mirror portion.26. The method of claim 24 wherein the substantially equipotential portion providing step includes providing one or more layers of material having an electrical conductance that is at least ten times the electrical conductance of the upper mirror portion.27. The method of claim 21 wherein the insulating portion is formed to reduce the reflectivity outside of the aperture.28. The method of claim 21 wherein the insulating portion is formed to increase the effective index outside the aperture and thereby produce a longer resonant wavelength outside the aperture.29. The method of claim 21 wherein the substantially equipotential portion is another mirror portion.30. A method for producing an optoelectronic device, the method comprising the steps of:providing a lower mirror portion; providing an active region above the lower mirror portion; providing an upper mirror portion above the active region, the upper mirror portion having layers of higher mobility material and layers of lower mobility material, wherein the layers of higher mobility material having a lower doping level than the layers of lower mobility material except at graded interfaces between the layers of higher mobility material and the lower mobility material where a dopine level is heavier than the doping level of the layers of lower mobility material so that the resistivity of the upper mirror portion is substantially independent of direction; providing a substantially equipotential portion above the upper mirror portion; and providing an electrically insulating portion within the upper mirror portion, the electrically insulating portion forming an aperture. 31. The method of claim 30 wherein the lower mirror portion is formed of a n-type material and the upper mirror portion is formed of a p-type material.32. The method of claim 30 wherein the lower mirror portion is formed of a p-type material and the upper mirror portion is formed of a n-type material.33. The method of claim 30 wherein the lower mirror portion and the upper mirror portion are formed from either an n-type of material or a p-type of material.34. The method of claim 30 wherein the upper mirror portion includes a number of semi-conductor layers with interfaces therebetween, the method further comprising the step of doping the interfaces more heavily than selected non-interface regions.35. The method of claim 30 further comprising the step of doping the upper mirror portion such that the product of the hole concentration and the mobility is substantially constant across at least a portion of the thickness of the upper mirror portion.36. The method of claim 30 further comprising the step of providing a dielectric stack above the aperture.37. The optoelectronic device of claim 30 further comprising a dielectric stack situated above the aperture.38. A method of producing a single mode VCSEL comprising the steps of:forming a VCSEL structure having a substrate, a bottom contact portion disposed below a lower surface of the substrate, a lower mirror portion disposed above an upper surface of the substrate, an active region disposed above the lower mirror portion, and an upper mirror portion disposed above the active region formed such that a product of a hole concentration and a mobility is substantially constant for each layer in the upper mirror portion; providing a substantially equipotential layer disposed above the upper mirror portion, the substantially equipotential layer comprises a layer of semiconductor material; providing an electrically insulating layer between the upper mirror portion and the equipotential layer to form an aperture therebetween; and providing an upper contact portion disposed above the equipotential layer. 39. A method according to claim 38 wherein the substantially equipotential layer comprising a layer of Aluminum Gallium Arsenide.40. A method for producing an optoelectronic device, the method comprising the steps of:providing a lower mirror portion; providing an active region above the lower mirror portion; providing an upper mirror portion above the active region, the upper mirror having graded interfaces between layers in the upper mirror portion, wherein a product of a hole concentration and a mobility is substantially constant for each layer in the upper mirror portion; providing a substantially equipotential portion above the upper mirror portion, wherein the substantially equipotential portion is another mirror portion; and providing an electrically insulating portion between the upper mirror portion and the equipotential portion, the electrically insulating portion forming an aperture. 41. A method for producing an optoelectronics device, the method comprising the steps of:providing a lower mirror portion; providing an active region above the lower mirror portion; providing an upper mirror portion above the active region, the upper mirror portion being at least substantially electrically isotropic; doping the upper mirror portion such that the product of the hole concentration and the mobility is substantially constant across at least one or more semiconductor layers of the upper mirror portion, wherein doping at interfaces between semiconductor layers in the upper mirror portion is heavier than doping within the semiconductor layers; providing a substantially equipotential portion above the upper mirror portion; and providing an electrically insulating protein within the upper mirror portion and/or between the upper mirror portion and the equipotential portion, the electrically insulating portion forming an aperture.
Vakhshoori Daryoosh (Chatham Township ; Morris County NJ), Article comprising a semiconductor laser that is non-degenerate with regard to polarization.
Floyd Philip D., Buried heterostructure vertical-cavity surface-emitting laser diodes using impurity induced layer disordering (IILD) via a buried impurity source.
Blonder Greg E. (Summit NJ) Chandross Edwin A. (Berkeley Heights NJ) Ho Seng-Tiong (Murray Hill NJ) McCall Samuel L. (Chatham NJ) Slusher Richart E. (Lebanon NJ) West Kenneth W. (Mendham NJ), Distributed Bragg reflectors and devices incorporating same.
Magnusson Robert (Arlington TX) Wang Shu-Shaw (Arlington TX), Efficient bandpass reflection and transmission filters with low sidebands based on guided-mode resonance effects.
Choquette Kent D. (Albuquerque NM) Lear Kevin L. (Albuquerque NM) Schneider ; Jr. Richard P. (Albuquerque NM), Efficient semiconductor light-emitting device and method.
Kofol J. Stephen (665 Roble Ave. ; Apt C Menlo Park CA 94025) Schroepfer Daniel A. (2857 Flag Ave. N. ; Apt. 1G New Hope MN 55427), Electronically steerable antenna.
Chu HyeYong,KRX ; Yoo ByuengSu,KRX ; Park HyoHoon,KRX ; Park MinSoo,KRX, Fabrication method of polarization-controlled surface-emitting laser diode using tilted-cavity.
Alan D. Kathman ; Charles S. Koehler ; William H. Welch ; Eric G. Johnson ; Robert D. Tekolste, Fiber coupler system and associated methods for reducing back reflections.
Paoli Thomas L. (Los Altos CA), High density, independently addressable, surface emitting semiconductor laser/light emitting diode arrays without a subs.
Lebby Michael S. (Apache Junction AZ) Shieh Chan-Long (Paradise Valley AZ) Lee Hsing-Chung (Calabasas CA), High efficiency VCSEL and method of fabrication.
Klem Russell D. (Naperville IL) Tomasko-Dean Kimberly Sue (LaGrange IL), Method and apparatus for providing interswitch handover in personal communication services systems.
Holonyak ; Jr. Nick (Urbana IL) Dallesasse John M. (Wheaton IL), Method for making aluminum gallium arsenide semiconductor device with native oxide layer.
Treat David W. (San Jose CA) Bour David P. (Spring Court Cupertino CA) Paoli Thomas L. (Los Altos CA), Multi-beam, orthogonally-polarized emitting monolithic quantum well lasers.
Tan Michael R. T. ; Yuen Albert T. ; Wang Shih-Yuan ; Hasnain Ghulam ; Houng Yu-Min, N-drive, p-common light-emitting devices fabricated on an n-type substrate and method of making same.
Kneissl, Michael A.; Kiesel, Peter; Van de Walle, Christian G., Nitride-based VCSEL or light emitting diode with p-n tunnel junction current injection.
Hahn Kenneth H. (Cupertino CA) Tan Michael R. T. (Mountain View CA) Wang Shih-Yuan (Palo Alto CA), Optical communication with vertical-cavity surface-emitting laser operating in multiple transverse modes.
Baets Roel,BEX ; Demeulenaere Bart,BEX ; Dhoedt Bart,BEX ; Goeman Stefan,BEX, Optical system with a dielectric subwavelength structure having high reflectivity and polarization selectivity.
Thornton Robert L. (East Palo Alto CA), Opto-electronic line printer having a high density, independently addressable, surface emitting semiconductor laser/ligh.
Brown Thomas G. (205 Doncaster Rd. Rochester NY 14623), Optoelectronic device for coupling between an external optical wave and a local optical wave for optical modulators and.
Nitta Jun,JPX ; Handa Yuichi,JPX, Oscillation polarization mode selective semiconductor laser, light transmitter and optical communication system using t.
Uchida Mamoru (Yokohama JPX) Ouchi Toshihiko (Machida JPX), Oscillation polarization selective semiconductor laser and optical communication system using the same.
Grodzinski Piotr (Chandler AZ) Lebby Michael S. (Apache Junction AZ) Lee Hsing-Chung (Calabasas CA), Patterned mirror VCSEL with adjustable selective etch region.
Cheung Kwok-wai (Red Bank NJ) Zah Chung-en (Marlboro NJ), Polarization-dependent and polarization-diversified opto-electronic devices using a strained quantum well.
Handa Yuichi,JPX, Polarization-mode selective semiconductor laser with a bending channel stripe, apparatus including the same and optical communication system using the same.
Mahbobzadeh Mohammad (Albuquerque NM) Osinski Marek A. (Albuquerque NM), Resonant-periodic-gain distributed-feedback surface-emitting semiconductor laser.
Jamal Ramdani ; Ravindranath Droopad ; Lyndee L. Hilt ; Kurt William Eisenbeiser, Semiconductor structure, semiconductor device, communicating device, integrated circuit, and process for fabricating the same.
Cohen Mitchell S. ; Gaio David P. ; Hogan William K. ; Isaacs Phillip D. ; McKnite Patrick E. ; Swain Miles ; Trewhella Jeannine M., Small form factor optoelectronic transceivers.
Sun Decai, Spatial absorptive and phase shift filter layer to reduce modal reflectivity for higher order modes in a vertical cavity surface emitting laser.
Pamulapati Jagadeesh ; Shen Paul H., Strain induce control of polarization states in vertical cavity surface emitting lasers and method of making same.
Lawrence E. Lach ; Robert Lempkowski ; Tomasz L. Klosowiak ; Keryn Lian, Structure and method for fabricating an electro-optic system having an electrochromic diffraction grating.
Anthony Philip J. (Bridgewater NJ) Chirovsky Leo M. F. (Bridgewater NJ) D\Asaro Lucian A. (Madison NJ) Mattera Vincent D. (Flemington NJ) Morgan Robert A. (Topton PA), Vertical cavity laser with mirror having controllable reflectivity.
Shieh Chan-Long (Paradise Valley AZ) Lebby Michael S. (Apache Junction AZ) Lee Hsing-Chung (Calabasas CA) Grodzinski Piotr (Chandler AZ), Vertical cavity surface emitting laser having continuous grading.
Magnusson Robert ; Young Preston P. ; Shin Dongho, Vertical-cavity laser and laser array incorporating guided-mode resonance effects and method for making the same.
Wang Shih-Yuan ; Tan Michael R. T. ; Holland William D. ; Ertel John P. ; Corzine Scott W., Vertical-cavity surface-emitting laser generating light with a defined direction of polarization.
Bryan Robert P. (Boulder CO) Olbright Gregory R. (Boulder CO) Lott James A. (Albuquerque NM) Schneider ; Jr. Richard P. (Albuquerque NM), Visible light emitting vertical cavity surface emitting lasers.
Kish Fred A. (San Jose CA) Steranka Frank M. (San Jose CA) DeFevere Dennis C. (Palo Alto CA) Robbins Virginia M. (Los Gatos CA) Uebbing John (Palo Alto CA), Wafer bonding of light emitting diode layers.
Yu-Hwa Lo ; Steven Gregg Hummel ; Chenting Lin ; Chau-Hong Kuo ; Mei-Ling Shek-Stefan ; Sergey V. Zaytsev, Wavelength-tunable semiconductor laser diode.
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