[특허]HDP-CVD dep/etch/dep process for improved deposition into high aspect ratio features

[미국특허] HDP-CVD dep/etch/dep process for improved deposition into high aspect ratio features 원문보기

IPC분류정보
국가/구분	United States(US) Patent 등록
국제특허분류(IPC7판)	H01L-021/311
출원번호	US-0138189 (2002-05-03)
발명자 / 주소	Li, Dongqing Chen, Xiaolin C. Zhang, Lin
출원인 / 주소	Applied Materials, Inc.
대리인 / 주소	Townsend &
인용정보	피인용 횟수 : 166 인용 특허 : 48

초록 ▼

A method of depositing a film on a substrate disposed in a substrate processing chamber. The method includes depositing a first portion of the film by forming a high density plasma from a first gaseous mixture flown into the process chamber. The deposition processes is then stopped and part of the deposited first portion of the film is etched by flowing a halogen etchant into the processing chamber. Next, the surface of the etched film is passivated by flowing a passivation gas into the processing chamber, and then a second portion of the film is deposited over the first portion by forming a high density plasma from a second gaseous mixture flown into the process chamber. In one embodiment the passivation gas consists of an oxygen source with our without an inert gas.

대표청구항 ▼

1. A method of depositing a film on a substrate disposed in a substrate processing chamber, the method comprising:depositing a first portion of the film by forming a high density plasma from a first gaseous mixture flown into the process chamber; thereafter, etching part of the deposited first portion of the film by flowing a halogen etchant into the processing chamber; thereafter, passivating the surface of the etched film by flowing a passivation gas into the processing chamber; thereafter, depositing a second portion of the film over the first portion by forming a high density plasma from a second gaseous mixture flown into the process chamber. 2. The method of claim 1 wherein the halogen etchant is a fluorine-containing gas.3. The method of claim 1 wherein the first and second gaseous mixtures are silica glass deposition gases.4. The method of claim 3 wherein the first and second gaseous mixtures each comprise silane and oxygen.5. The method of claim 1 wherein bias power is applied while the first gaseous mixture is flowed into the chamber during deposition of the first portion of the film.6. The method of claim 5 wherein the bias power is switched off prior to flowing the halogen etchant into the chamber.7. The method of claim 1 wherein the passivation gas comprises oxygen.8. The method of claim 1 wherein the passivating step comprises exposing the surface of the etched film to a high density plasma consisting of an oxygen source with or without an inert gas.9. The method of claim 1 wherein bias power is applied to the chamber during the passivating step.10. A method of depositing a silica glass film on a substrate disposed in a substrate processing chamber, the method comprising, in order:flowing a first process gas comprising silane and oxygen into the processing chamber and forming a high density plasma from the first process gas to deposit a first portion of the silica glass film over the substrate; stopping deposition of the silica glass film and flowing a fluorine etchant into the process chamber to etch part of the first portion of the silica glass film; flowing a passivation gas comprising oxygen into the processing chamber; and flowing a second process gas comprising silane and oxygen into the processing chamber to deposit a second portion of the silica glass film over the first portion; wherein the high density plasma is continuously maintained during each of the above steps. 11. The method of claim 10 wherein the passivation gas consists of an oxygen source with our without an inert gas.12. The method of claim 11 wherein bias power is applied to the chamber while the passivating is flown into the chamber.13. The method of claim 10 wherein bias power is (i) applied while the first process gas is flowed into the chamber during deposition of the first portion of the silica glass film and (ii) switched off prior to flowing the fluorine etchant gas into the chamber to etch part of the first portion of the silica glass film.14. The method of claim 13 wherein bias power is again applied while the second process gas is flowed into the chamber during deposition of the second portion of the silica glass film.15. The method of claim 14 wherein an oxygen-containing source is flowed into the chamber along with the fluorine etchant when the first portion of the silica glass film is etched.16. A method of depositing a silica glass film on a substrate disposed in a substrate processing chamber, the method comprising:forming a high density plasma within the substrate processing chamber to heat the substrate to a temperature of at least 400° C. prior to depositing the silica glass film on the substrate; maintaining the high density plasma while (i) flowing a first process gas comprising a silicon source and an oxygen source into the processing chamber to deposit a first portion of the silica glass film over the substrate, (ii) flowing a fluorine-containing etchant gas into the process chamber to etch part of the first portion of the silica glass film; (iii) flowing a passivation gas comprising oxygen into the processing chamber and (iv) flowing a second process gas comprising silane and oxygen into the processing chamber to deposit a second portion of the silica glass film over the first portion; wherein RF bias power is applied to the chamber during deposition of the first portion of the film, stopped prior to etching the part of the first portion of the film and then again applied prior to deposition of the second portion of the film. 17. The method of claim 16 wherein the passivation gas consists of an oxygen source with our without an inert gas and a second step, after the first step, in which the flow of the oxygen source is maintained while the flow of the fluorine source is stopped.18. The method of claim 17 wherein bias power is applied to the chamber during the passivating step.19. A method of depositing a silica glass film on a substrate disposed in a substrate processing chamber, the method comprising:flowing an inert gas into the substrate processing chamber; forming a high density plasma within the substrate processing chamber from the inert gas; adding a flow of oxygen to the plasma and heating the substrate to a temperature of at least 400° C. prior to depositing the silica glass film on the substrate; adding a flow of silane to the plasma to deposit a first portion of the silica glass film over the substrate, wherein RE bias power is applied to the chamber during deposition of the first portion of the film; stopping the flow of silane and adding a flow of a fluorine-containing etchant to the plasma to etch part of the first portion of the silica glass film, wherein RF bias power is stopped prior to etching the part of the first portion of the film; stopping the flow of the fluorine-containing etchant and exposing the surface of the substrate to a oxygen plasma for between 5 and 20 seconds, wherein RE bias power is applied during passivation of the upper surface; adding a flow of silane to the plasma to deposit a second portion of the silica glass film over the first portion, wherein RE bias power is applied during deposition of the second portion of the film. 20. A method of filling a gap formed between adjacent raised surfaces on a substrate with a silica glass film, the method comprising:transferring the substrate into a high density plasma CVD substrate processing chamber; partially filling the gap by depositing a first portion of the silica glass film over the substrate by flowing a first process gas comprising silicon and oxygen into the processing chamber and forming a high density plasma from the first process gas; etching the first portion of the silica glass film by flowing an etchant gas comprising a fluorine etchant into the process chamber and forming a high density plasma from the etchant gas; thereafter, exposing the first portion of the silica glass film to a high density plasma formed from a passivation gas comprising oxygen introduced into the processing chamber; and thereafter, filling the gap by depositing a second portion of the silica glass film over the first portion by flowing a second process gas comprising silicon and oxygen into the processing chamber and forming a high density plasma from the second process gas. 21. The method of claim 20 wherein the passivation gas consists of oxygen with or without an inert gas.22. The method of claim 21 wherein the first and second process gases each comprise silane and molecular oxygen.23. The method of claim 22 wherein the etchant gas comprises nitrogen trifluoride.

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Papasouliotis,George D.; Cho,Seon Mee; Rulkens,Ron; Buretea,Mihai; Hausmann,Dennis M.; Barnes,Michael, Metal-free catalysts for pulsed deposition layer process for conformal silica laminates.
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Papasouliotis,George D.; Tarafdar,Raihan M.; Rulkens,Ron; Hausmann,Dennis M.; Tobin,Jeff; Tipton,Adrianne K.; Nie,Bunsen, Method for controlling properties of conformal silica nanolaminates formed by rapid vapor deposition.
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Eun, Byung Soo, Method for fabricating an inter dielectric layer in semiconductor device.
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Ko, Jungmin, Method of fin patterning.
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Lee,Jae Suk, Method of forming pre-metal dielectric layer.
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Brcka, Jozef, Multiple gas plasma forming method and ICP source.
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Zhang, Jingchun; Wang, Anchuan; Ingle, Nitin K., Remotely-excited fluorine and water vapor etch.
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Xu, Lin; Chen, Zhijun; Huang, Jiayin; Wang, Anchuan, Removal methods for high aspect ratio structures.
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Yang, Dongqing; Zhu, Lala; Wang, Fei; Ingle, Nitin K., Saving ion-damaged spacers.
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Chen, Zhijun; Huang, Jiayin; Wang, Anchuan; Ingle, Nitin, Selective SiN lateral recess.
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Wang, Xikun; Lei, Jianxin; Ingle, Nitin; Shaviv, Roey, Selective cobalt removal for bottom up gapfill.
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Ingle, Nitin K.; Kachian, Jessica Sevanne; Xu, Lin; Park, Soonam; Wang, Xikun; Anthis, Jeffrey W., Selective etch for metal-containing materials.
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Zhang, Jingchun; Wang, Anchuan; Ingle, Nitin K., Selective etch for silicon films.
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Zhang, Jingchun; Wang, Anchuan; Ingle, Nitin K., Selective etch for silicon films.
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Wang, Anchuan; Zhang, Jingchun; Ingle, Nitin K.; Lee, Young S., Selective etch of silicon by way of metastable hydrogen termination.
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Wang, Anchuan; Zhang, Jingchun; Ingle, Nitin K.; Lee, Young S., Selective etch of silicon by way of metastable hydrogen termination.
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Chen, Zhijun; Li, Zihui; Wang, Anchuan; Ingle, Nitin K.; Venkataraman, Shankar, Selective etch of silicon nitride.
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Chen, Zhijun; Li, Zihui; Wang, Anchuan; Ingle, Nitin K.; Venkataraman, Shankar, Selective etch of silicon nitride.
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Citla, Bhargav; Ying, Chentsau; Nemani, Srinivas; Babayan, Viachslav; Stowell, Michael, Selective etch using material modification and RF pulsing.
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Wang, Xikun; Ingle, Nitin, Selective in situ cobalt residue removal.
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Hoinkis, Mark; Miyazoe, Hiroyuki; Joseph, Eric, Selective sputtering for pattern transfer.
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Wang, Yunyu; Wang, Anchuan; Zhang, Jingchun; Ingle, Nitin K.; Lee, Young S., Selective suppression of dry-etch rate of materials containing both silicon and nitrogen.
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Wang, Yunyu; Wang, Anchuan; Zhang, Jingchun; Ingle, Nitin K.; Lee, Young S., Selective suppression of dry-etch rate of materials containing both silicon and oxygen.
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Liu, Jie; Zhang, Jingchun; Wang, Anchuan; Ingle, Nitin K.; Park, Seung; Chen, Zhijun; Hsu, Ching-Mei, Selective titanium nitride etching.
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Liu, Jie; Zhang, Jingchun; Wang, Anchuan; Ingle, Nitin K.; Park, Seung; Chen, Zhijun; Hsu, Ching-Mei, Selective titanium nitride etching.
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Wang, Xikun; Wang, Anchuan; Ingle, Nitin K.; Lubomirsky, Dmitry, Selective titanium nitride removal.
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Wang, Xikun; Wang, Anchuan; Ingle, Nitin K.; Lubomirsky, Dmitry, Selective titanium nitride removal.
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Wang, Xikun; Ingle, Nitin, Selective tungsten removal.
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Pandit, Mandar B.; Wang, Anchuan; Ingle, Nitin K., Self-aligned process.
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Arnepalli, Ranga Rao; Goradia, Prerna Sonthalia; Visser, Robert Jan; Ingle, Nitin; Korolik, Mikhail; Biswas, Jayeeta; Lodha, Saurabh, Self-limiting atomic thermal etching systems and methods.
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Lubomirsky, Dmitry; Chen, Xinglong; Venkataraman, Shankar, Semiconductor processing systems having multiple plasma configurations.
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Yang, Jang-Gyoo; Chen, Xinglong; Park, Soonam; Baek, Jonghoon; Garg, Saurabh; Venkataraman, Shankar, Semiconductor processing with DC assisted RF power for improved control.
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Yang, Jang-Gyoo; Chen, Xinglong; Park, Soonam; Baek, Jonghoon; Garg, Saurabh; Venkataraman, Shankar, Semiconductor processing with DC assisted RF power for improved control.
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Nguyen, Andrew; Ramaswamy, Kartik; Nemani, Srinivas; Howard, Bradley; Vishwanath, Yogananda Sarode, Semiconductor system assemblies and methods of operation.
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Tarafdar, Raihan M.; Papasouliotis, George D.; Rulkens, Ron; Hausmann, Dennis M.; Tobin, Jeff; Tipton, Adrianne K.; Nie, Bunsen, Sequential deposition/anneal film densification method.
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Tarafdar,Raihan M.; Papasouliotis,George D.; Rulkens,Ron; Hausmann,Dennis M.; Tobin,Jeff; Tipton,Adrianne K.; Nie,Bunsen, Sequential deposition/anneal film densification method.
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Ko, Jungmin; Choi, Tom; Ingle, Nitin; Kim, Kwang-Soo; Wou, Theodore, SiN spacer profile patterning.
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Li, Zihui; Hsu, Ching-Mei; Zhang, Hanshen; Zhang, Jingchun, Silicon selective removal.
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Chen, Zhijun; Zhang, Jingchun; Wang, Anchuan; Ingle, Nitin K., Silicon-carbon-nitride selective etch.
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Kim, Hun Sang; Choi, Jinhan; Koseki, Shinichi, Simplified litho-etch-litho-etch process.
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Luere, Olivier; Kang, Sean S.; Nemani, Srinivas D., Spacer formation.
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Wang, Xikun; Xu, Lin; Wang, Anchuan; Ingle, Nitin K., Titanium oxide etch.
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Liu, Jie; Wang, Xikun; Park, Seung; Korolik, Mikhail; Wang, Anchuan; Ingle, Nitin K., Tungsten oxide processing.
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Yang, Dongqing; Tang, Jing; Ingle, Nitin, Uniform dry etch in two stages.
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Wang, Xikun; Wang, Anchuan; Ingle, Nitin K., V trench dry etch.
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Liu, Jie; Purayath, Vinod R.; Wang, Xikun; Wang, Anchuan; Ingle, Nitin K., Vertical gate separation.
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IPC	Description
A	생활필수품
A62	인명구조; 소방(사다리 E06C)
A62B	인명구조용의 기구, 장치 또는 방법(특히 의료용에 사용되는 밸브 A61M 39/00; 특히 물에서 쓰이는 인명구조 장치 또는 방법 B63C 9/00; 잠수장비 B63C 11/00; 특히 항공기에 쓰는 것, 예. 낙하산, 투출좌석 B64D; 특히 광산에서 쓰이는 구조장치 E21F 11/00)
A62B-1/08	.. 윈치 또는 풀리에 제동기구가 있는 것

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[미국특허] HDP-CVD dep/etch/dep process for improved deposition into high aspect ratio features 원문보기

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