초록 ▼

There is provided a semiconductor device comprising a Cu film provided above a main surface of a semiconductor substrate and used as a wiring, an intermediate layer formed at least on the Cu film, and an Al film formed on the intermediate layer and used as a pad, wherein the intermediate layer compr

There is provided a semiconductor device comprising a Cu film provided above a main surface of a semiconductor substrate and used as a wiring, an intermediate layer formed at least on the Cu film, and an Al film formed on the intermediate layer and used as a pad, wherein the intermediate layer comprises a refractory metal nitride film and a refractory metal film formed on the refractory metal nitride film.

대표청구항 ▼

1. A semiconductor device comprising:a Cu film provided above a main surface of a semiconductor substrate and used as a wiring; an intermediate layer formed at least on the Cu film, the intermediate layer comprising a TaN film formed on the Cu film and a Ta film formed on the TaN film; an Al film fo

1. A semiconductor device comprising:a Cu film provided above a main surface of a semiconductor substrate and used as a wiring; an intermediate layer formed at least on the Cu film, the intermediate layer comprising a TaN film formed on the Cu film and a Ta film formed on the TaN film; an Al film formed on the Ta film and used as a pad, the Al film having a horizontally extending portion under which the Cu film is not formed; and a conductive connection member connected to the Al film only at the horizontally extending portion. 2. The semiconductor device according to claim 1, wherein the intermediate layer has a first portion which contacts the Cu film and a second portion which does not contact the Cu film, and an insulating film contacts the second portion.3. The semiconductor device according to claim 1, wherein the intermediate layer has a portion corresponding to the extending portion.4. The semiconductor device according to claim 1, wherein the conductive connection member includes a bonding wire.5. The semiconductor device according to claim 1, wherein a thickness of the Ta film is 5 nm or less.6. The semiconductor device according to claim 1, wherein a thickness of the TaN film is 20 nm or more.7. The semiconductor device according to claim 1, wherein a thickness of the TaN film is 40 nm or more.8. The semiconductor device according to claim 1, wherein no conductive connection member is connected to that portion of the Al film under which the Cu film is formed.9. The semiconductor device according to claim 1, wherein the Al film has a plurality of vertically extending portions extending toward the Cu film, and wherein the intermediate layer has a plurality of portions provided between the vertically extending portions and the Cu film.10. The semiconductor device according to claim 9, further comprising an insulating film surrounding each of the vertically extending portions.