Current-controlled CMOS circuits with inductive broadbanding
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
H03K-019/094
H03M-009/00
출원번호
US-0315473
(2002-12-09)
발명자
/ 주소
Green, Michael M.
출원인 / 주소
Broadcom Corporation
대리인 / 주소
Garlick Harrison &
인용정보
피인용 횟수 :
10인용 특허 :
160
초록▼
Various circuit techniques for implementing ultra high speed circuits use current-controlled CMOS (C3MOS) logic with inductive broadbanding fabricated in conventional CMOS process technology. Optimum balance between power consumption and speed for each circuit application is achieve by combining hig
Various circuit techniques for implementing ultra high speed circuits use current-controlled CMOS (C3MOS) logic with inductive broadbanding fabricated in conventional CMOS process technology. Optimum balance between power consumption and speed for each circuit application is achieve by combining high speed C3MOS logic with inductive broadbanding /C3MOS logic with low power conventional CMOS logic. The combined C3MOS logic with inductive broadbanding /C3MOS /CMOS logic allows greater integration of circuits such as high speed transceivers used in fiber optic communication systems.
대표청구항▼
1. A circuitry fabricated on a silicon substrate, the circuitry comprising:a deserializer, implemented using current-controlled complementary metal-oxide semiconductor (C3MOS) logic with inductive broadbanding, that receives an input signal having a first frequency and generates a first plurality of
1. A circuitry fabricated on a silicon substrate, the circuitry comprising:a deserializer, implemented using current-controlled complementary metal-oxide semiconductor (C3MOS) logic with inductive broadbanding, that receives an input signal having a first frequency and generates a first plurality of signals there from such that each signal of the first plurality of signals has a second frequency that is lower than the first frequency; core circuitry, implemented using conventional complementary metal-oxide-semiconductor (CMOS) logic, that is communicatively coupled to the deserializer and that processes each signal of the first plurality of signals having the second frequency thereby generating a second plurality of signals such that each signal of the second plurality of signals also has the second frequency; and a serializer, implemented using C3MOS logic with inductive broadbanding, that is communicatively coupled to the core circuitry and that receives each signal of the second plurality of signals and that generates an output signal there from that has the first frequency. 2. The circuitry of claim 1, wherein:at least one of the serializer and the deserializer is implemented using first and second n-channel metal-oxide-semiconductor field-effect transistor (MOSFET) having their source terminals coupled to a first node, their gate terminals coupled to receive a first and second differential logic signals, respectively, and their drain terminals coupled respectively to first and second output nodes; first and second series RL circuits respectively coupled between the first and second output nodes and a logic high level; first and second capacitive loads (CL) respectively coupled to the output nodes; and a current-source n-channel MOSFET coupled between the source terminals to the first and second n-channel MOSFETs and a logic low level. 3. The circuitry of claim 2, wherein:each RL circuit of the first and second series RL circuits includes a resistor and an inductor connected in series; and the inductor of each RL circuit of the first and second series RL circuits is a spiral inductor coupled to the silicon substrate. 4. The circuitry of claim 2, wherein;each RL circuit of the first and second series RL circuits includes a resistor and an inductor connected in series; and the resistor of each RL circuit of the first and second series RL circuits is a p-channel MOSFET that operates substantially in its linear operating region. 5. The circuitry of claim 2, wherein:each RL circuit of the first and second series RL circuits includes a resistor and an inductor connected in series; and the resistor of each RL circuit of the first and second series RL circuits is a polysilicon resistor fabricated of polysilicon materials. 6. The circuitry of claim 1, wherein:the core circuitry performs monitoring and error correction of each signal of the first plurality of signals having the second frequency. 7. The circuitry of claim 6, wherein:the core circuitry is implemented as an application specification integrated circuit (ASIC). 8. The circuitry of claim 1, further comprising:a laser driver circuitry, communicatively coupled to the serializer, that receives the output signal having the first frequency, that converts the output signal from an electrical signal format to a fiber-optic signal having an optical signal format compatible with a fiber-optic communication channel, and transmits the fiber-optic signal onto the fiber-optic communication channel. 9. The circuitry of claim 1, further comprising:a photo detect and driver circuitry, communicatively coupled to a fiber optic communication channel, that receives a fiber-optic signal there from and that converts the fiber-optic signal to a channel signal having an electrical signal format that is arranged into a plurality of data packets; and a clock data recovery (CDR) circuitry, communicatively coupled to the photo detect and driver circuitry, that receives the channel signal and that recovers a clock and a data signal there from. 10. A circuitry fabricated on a silicon substrate, the circuitry comprising:a deserializer, implemented using current-controlled complementary metal-oxide semiconductor (C3MOS) logic with inductive broadbanding, that receives an input signal having a frequency and generates a plurality of signals there from such that each signal of the plurality of signals has a second frequency that is lower than the first frequency; wherein the deserializer is implemented using first and second n-channel metal-oxide-semiconductor field-effect transistor (MOSFET) having their source terminals coupled to a first node, their gate terminals coupled to receive a first and second differential logic signals, respectively, and their drain terminals coupled respectively to first and second output nodes; first and second series RL circuits respectively coupled between the first and second output nodes and a logic high level; first and second capacitive loads (CL) respectively coupled to the output nodes; and a current-source n-channel MOSFET coupled between the source terminals to the first and second n-channel MOSFETs and a logic low level. 11. The circuitry of claim 10, further comprising:core circuitry, implemented using conventional complementary metal-oxide-semiconductor (CMOS) logic, that is communicatively coupled to the deserializer and that processes each signal of the plurality of signals having the second frequency thereby generating a processed plurality of signals such that each signal of the processed plurality of signals also has the second frequency; and a serializer, implemented using C3MOS logic with inductive broadbanding, that is communicatively coupled to the core circuitry and that receives each signal of the processed plurality of signals and that generates an output signal there from that has the first frequency. 12. The circuitry of claim 11, further comprising:a laser driver circuitry, communicatively coupled to the serializer, that receives the output signal having the first frequency, that converts the output signal from an electrical signal format to a fiber-optic signal having an optical signal format compatible with a fiber-optic communication channel, and transmits the fiber-optic signal onto the fiber-optic communication channel. 13. The circuitry of claim 11, further comprising:a photo detect and driver circuitry, communicatively coupled to a fiber optic communication channel, that receives a fiber-optic signal there from and that converts the fiber-optic signal to a channel signal having an electrical signal format that is arranged into a plurality of data packets; and a clock data recovery (CDR) circuitry, communicatively coupled to the photo detect and driver circuitry, that receives the plurality of data packets of the channel signal and that recovers a clock and a data signal there from. 14. The circuitry of claim 10, wherein:each RL circuit of the first and second series RL circuits includes a resistor and an inductor connected in series; and the inductor of each RL circuit of the first and second series RL circuits is a spiral inductor coupled to the silicon substrate. 15. The circuitry of claim 10, wherein:each RL circuit of the first and second series RL circuits includes a resistor and an inductor connected in series; and the resistor of each RL circuit of the first and second series RL circuits is a p-channel MOSFET that operates substantially in its linear operating region. 16. The circuitry of claim 10, wherein: each RL circuit of the first and second series RL circuits includes a resistor and an inductor connected in series; andthe resistor of each RL circuit of the first and second series RL circuits is a polysilicon resistor fabricated of polysilicon materials. 17. The circuitry of claim 10, wherein:the core circuitry performs monitoring and error correction of each signal of the first plurality of signals having the second frequency. 18. The circuitry of claim 17, wherein:the core circuitry is implemented as an application specification integrated circuit (ASIC). 19. A transceiver, comprising:a photo detect and driver circuitry, communicatively coupled to a fiber optic communication channel, that receives an input fiber-optic signal there from and that converts the input fiber-optic signal to a channel signal having an electrical signal format that is arranged into a plurality of data packets; a clock data recovery (CDR) circuitry, communicatively coupled to the photo detect and driver circuitry, that receives the plurality of data packets of the channel signal and that recovers a clock and an input data signal there from; a deserializer, implemented using current-controlled complementary metal-oxide semiconductor (C3MOS) logic with inductive broadbanding, that receives the input data signal having a first frequency and generates a first plurality of signals there from such that each signal of the first plurality of signals has a second frequency that is lower than the first frequency; core circuitry, implemented using conventional complementary metal-oxide-semiconductor (CMOS) logic, that is communicatively coupled to the deserializer and that processes each signal of the first plurality of signals having the second frequency thereby generating a second plurality of signals such that each signal of the second plurality of signals also has the second frequency; a serializer, implemented using C3MOS logic with inductive broadbanding, that is communicatively coupled to the core circuitry and that receives each signal of the second plurality of signals and that generates an output data signal there from that has the first frequency; and a laser driver circuitry, communicatively coupled to the serializer, that receives the output data signal having the first frequency, that converts the output data signal from an electrical signal format to an output fiber-optic signal having an optical signal format compatible with the fiber-optic communication channel, and transmits the output fiber-optic signal onto the fiber-optic communication channel. 20. The circuitry of claim 19, wherein:at least one of the serializer and the deserializer is implemented using first and second n-channel metal-oxide-semiconductor field-effect transistor (MOSFET) having their source terminals coupled to a first node, their gate terminals coupled to receive a first and second differential logic signals, respectively, and their drain terminals coupled respectively to first and second output nodes; first and second series RL circuits respectively coupled between the first and second output nodes and a logic high level; first and second capacitive loads (CL) respectively coupled to the output nodes; and a current-source n-channel MOSFET coupled between the source terminals to the first and second n-channel MOSFETs and a logic low level.
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