IPC분류정보
국가/구분 |
United States(US) Patent
등록
|
국제특허분류(IPC7판) |
|
출원번호 |
US-0978934
(2001-10-16)
|
우선권정보 |
JP-0314981 (2000-10-16) |
발명자
/ 주소 |
- Suzuki, Katsunori
- Iijima, Kenzaburou
- Hoshi, Toshiharu
|
출원인 / 주소 |
|
대리인 / 주소 |
Dickstein, Shapiro, Morin &
|
인용정보 |
피인용 횟수 :
4 인용 특허 :
2 |
초록
▼
A heat radiator for dissipating heat from an electronic device, which is mounted on a board or which is installed in a casing, to the outside thereof is basically composed of a substrate having plenty of through holes, which are produced by press molding and sintering. The substrate having a low the
A heat radiator for dissipating heat from an electronic device, which is mounted on a board or which is installed in a casing, to the outside thereof is basically composed of a substrate having plenty of through holes, which are produced by press molding and sintering. The substrate having a low thermal expansion coefficient is made of a copper-tungsten alloy or a copper-molybdenum alloy in which the copper content is smaller than the tungsten content or molybdenum content. The through holes each having a circular shape or a rectangular shape are infiltrated with the compound having a high thermal conductivity and composed of a copper-tungsten alloy or a copper-molybdenum alloy in which the copper content is greater than the tungsten content or molybdenum content. Thus, the heat radiator allows thermal conduction along axial directions of the through holes while substantially avoiding unwanted thermal expansion thereof.
대표청구항
▼
1. A heat radiator for removing heat from an electronic device, comprising:a substrate made of a first material that is selected from among a copper-tungsten alloy whose copper content is lower than a tungsten content, and a copper-molybdenum alloy whose copper content is lower than a molybdenum con
1. A heat radiator for removing heat from an electronic device, comprising:a substrate made of a first material that is selected from among a copper-tungsten alloy whose copper content is lower than a tungsten content, and a copper-molybdenum alloy whose copper content is lower than a molybdenum content; a plurality of through holes that are arranged over a surface of the substrate; and a second material that is selected from among a copper-tungsten alloy whose copper content is higher than a tungsten content, and a copper-molybdenum alloy whose copper content is higher than a molybdenum content, wherein the second material is filled into the plurality of through holes of the substrate, thus allowing thermal conduction along axial directions of the through holes. 2. The heat radiator for removing heat from an electronic device according to claim 1, wherein the through holes are subjected to a unidirectional multicentral arrangement or a unidirectional radial arrangement.3. The heat radiator for removing heat from an electronic device according to claim 1, wherein a total volume ratio of the through holes occupied against an overall volume of the substrate is approximately 10 vol. % or more and/or 45 vol. % or less.4. The heat radiator for removing heat from an electronic device according to claim 3, wherein an average diameter of the through holes is approximately 50 μm or more and/or 1 mm or less.5. The heat radiator for removing heat from an electronic device according to claim 1, wherein an average diameter of the through holes is approximately 50 μm ore more and/or 1 mm or less.6. The heat radiator for removing heat from an electronic device according to claim 1, wherein each of the through holes has one of a circular shape and a rectangular shape.7. The heat radiator for removing heat from an electronic device according to claim 1, wherein the through holes are formed as channels that linearly extend in a radial manner over the surface of the substrate.8. A heat radiator for removing heat from an electronic device, comprising:a substrate made of a first material that is selected from among metals and alloys whose linear thermal coefficients under a condition where temperature is increased from room temperature to 400° C. is approximately 10 ppm/K or less; a plurality of through holes that are arranged over a surface of the substrate; and a second material that is made of copper and is infiltrated into the plurality of through holes of the substrate, thus allowing thermal conduction along axial directions of the through holes. 9. The heat radiator for removing heat from an electronic device according to claim 8, wherein the first material is selected from among tungsten, iron-nickel alloy, and iron-nickel-cobalt alloy.10. The heat radiator for removing heat from an electronic device according to claim 8, wherein each of the through holes has one of a circular shape and a rectangular shape.11. The heat radiator for removing heat from an electronic device according to claim 8, wherein the through holes are formed as channels that linearly extend in a radial manner over the surface of the substrate.12. A semiconductor laser module comprising:a semiconductor laser element for emitting laser beams, which is mounted on a board; a thermoelectric module containing a plurality of thermoelectric elements which are electrically connected by conduction, wherein the thermoelectric module is arranged between a pair of electrodes formed at surfaces of insulating substrates which are arranged opposite to each other, wherein a heat absorption side of the thermoelectric module is attached to the board for mounting the semiconductor laser element; and a heat radiator composed of a substrate having a plurality of through holes attached to a heat radiation side of the thermoelectric module, wherein the substrate is made of a first material having a first thermal expansion coefficient and a first thermal conductivity, and the through holes are respectively filled with a second material having a second thermal expansion coefficient and a second thermal conductivity, the first thermal expansion coefficient being lower than the second thermal expansion coefficient, and the second thermal conductivity being higher than the first thermal conductivity. 13. The semiconductor laser module according to claim 12, wherein the through holes each having one of a circular shape and a rectangular shape are arranged over a surface of the substrate in such a way that a total volume ratio of the through holes occupied against an overall volume of the substrate is approximately 10 vol. % or more and/or 45 vol. % or less.14. The semiconductor laser module according to claim 12, wherein an average diameter of the through holes is approximately 50 μm or more and/or 1 mm or less.15. The semiconductor laser module according to claim 12, wherein the first material is composed of a copper-tungsten alloy or a copper-molybdenum alloy in which a copper content is smaller than a tungsten content or a molybdenum content, while the second material is composed of a copper-tungsten alloy or a copper-molybdenum alloy in which a copper content is greater than a tungsten content or a molybdenum content.16. The semiconductor laser module according to claim 12, wherein the first material whose thermal expansion coefficient is approximately 10 ppm/K or less is composed of tungsten, iron-nickel alloy, or iron-nickel-cobalt alloy, while the second material is composed of copper.
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