초록 ▼

Disclosed are a bonding method for a semiconductor chip, which employs an ultrasonic bonding scheme that prevents wear-out of the top surface of a mount tool and ensures both high reliability and high productivity, and a bonding apparatus which is used to carry out the method. The bonding apparatus

Disclosed are a bonding method for a semiconductor chip, which employs an ultrasonic bonding scheme that prevents wear-out of the top surface of a mount tool and ensures both high reliability and high productivity, and a bonding apparatus which is used to carry out the method. The bonding apparatus and method are provided with means for suppressing generation of a sliding friction. The apparatus and method execute a bonding process by controlling vibration-axial directional holding force and inertial force based on information given from control management means to thereby maintain a relationship of(vibration-axial directional holding force)>(die shear strength)+(inertial force)while applying an ultrasonic vibration to a region which is subjected to bonding.

대표청구항 ▼

1. A bonding apparatus for a semiconductor chip, comprising:ultrasonic vibration generating unit which applies an ultrasonic vibration to a contact region where a bonding portion of said semiconductor chip is in contact with a bonding portion of another part to be bonded to said semiconductor chip,

1. A bonding apparatus for a semiconductor chip, comprising:ultrasonic vibration generating unit which applies an ultrasonic vibration to a contact region where a bonding portion of said semiconductor chip is in contact with a bonding portion of another part to be bonded to said semiconductor chip, via a mount tool for holding said semiconductor chip, so that said ultrasonic vibration increases a die shear strength that is a shear strength of an entire bonding region to be formed between said semiconductor chip and said part which are to be bonded in an ultrasonic-vibration-axial direction; holding force control unit which controls vibration-axial directional holding force or a shear strength of an entire contact interface of said semiconductor chip to be held by said mount tool and said mount tool in said ultrasonic-vibration-axial direction; inertial force control unit which controls inertial force in said ultrasonic-vibration-axial direction, which is generated on said semiconductor chip to be held by said mount tool by said ultrasonic vibration; and control management unit which maintains a relationship of (vibration-axial directional holding force)>(die shear strength)+(inertial force). 2. The bonding apparatus according to claim 1, wherein said holding force control unit comprises at least one of unit for applying a vertical load from said mount tool to a contact surface of said mount tool with said semiconductor chip to be held by said mount tool and chuck unit, installed inside said mount tool, for chucking said semiconductor chip to be held by said mount tool.3. The bonding apparatus according to claim 1, wherein said inertial force control unit comprises at least one of unit which changes a vibration frequency of said ultrasonic vibration and unit which changes a vibration amplitude of said ultrasonic vibration.4. The bonding apparatus according to claim 1, wherein said control management unit includes a memory device where data about a variation in said die shear strength stored beforehand is saved.5. The bonding apparatus according to claim 1, wherein said control management unit includes unit measuring said die shear strength or a substitute characteristic thereof.6. The bonding apparatus according to claim 1, wherein said control management unit includes unit measuring said vibration-axial directional holding force or a substitute characteristic thereof.