초록 ▼

A heating apparatus which is installed in a low pressure CVD system or annealing equipment for use in semiconductor integrated circuit manufacturing processes for heat-treating wafers on which IC's are to be formed, wherein wafers are uniformly heated, the temperature of wafers is rapidly raised and

A heating apparatus which is installed in a low pressure CVD system or annealing equipment for use in semiconductor integrated circuit manufacturing processes for heat-treating wafers on which IC's are to be formed, wherein wafers are uniformly heated, the temperature of wafers is rapidly raised and lowered, and wafers are processed in high volume, wherein the apparatus comprises a cylindrical body made of glass-like carbon placed inside a reactor, and a high-frequency induction coil which is placed outside the reactor and is for causing the cylindrical body made of glass-like carbon to produce heat and thereby heating wafers in the reactor.

대표청구항 ▼

1. A CVD system comprising:a reactor formed as a tube; a wafer boat positioned in the reactor; a cylindrical body positioned in the reactor surrounding the wafer boat and made of glass-like carbon, wherein the upper end of said cylindrical body is open; means for supplying a gas to the inside of sai

1. A CVD system comprising:a reactor formed as a tube; a wafer boat positioned in the reactor; a cylindrical body positioned in the reactor surrounding the wafer boat and made of glass-like carbon, wherein the upper end of said cylindrical body is open; means for supplying a gas to the inside of said cylindrical body; and a high frequency induction coil positioned outside the reactor at a location such that energization of the high frequency induction coil will cause at least the cylindrical body made of glass-like carbon to produce heat. 2. The CVD system of claim 1, wherein said wafer boat is made of glass-like carbon.3. The CVD system of claim 1, further comprising a heat insulating body positioned to insulate said reactor.