초록 ▼

A light source including a specific LED and phosphor combination capable of emitting white light for direct illumination. In one embodiment, the light source includes an LED chip emitting in the 460-470 nm range radiationally coupled to a phosphor comprising Ca8Mg(SiO4)4Cl2:Eu2+,Mn2+. In a second em

A light source including a specific LED and phosphor combination capable of emitting white light for direct illumination. In one embodiment, the light source includes an LED chip emitting in the 460-470 nm range radiationally coupled to a phosphor comprising Ca8Mg(SiO4)4Cl2:Eu2+,Mn2+. In a second embodiment, the light source includes an LED chip emitting at about 430 nm and a phosphor comprising a blend of Sr4Al14O25:Eu2+ (SAE) and a second phosphor having the formula(Tb1-x-yAxREy)3DzO12, where A is a member selected from the group consisting of Y, La, Gd, and Sm; RE is a member selected from the group consisting of Ce, Pr, Nd, Sm, Eu, Gd, Dy, Ho, Er, Tm, Yb, and Lu; D is a member selected from the group consisting of Al, Ga, and In; x is in the range from 0 to about 0.5, y is in the range from about 0 to about 0.2, and z is in the range from about 4 to about 5. Both embodiments produce light having the coordinates x=0.240-0.260 and y=0.340-0.360 on the CIE chromaticity diagram.

대표청구항 ▼

1. A lighting apparatus comprising:a semiconductor light source emitting radiation having a wavelength in the range of about 430 nm; a phosphor blend comprising Sr4Al14O25:Eu2+ (SAE) and a second phosphor having the formula(Tb1-x-yAxREy)3DzO12, where A is a member selected from the group consisting

1. A lighting apparatus comprising:a semiconductor light source emitting radiation having a wavelength in the range of about 430 nm; a phosphor blend comprising Sr4Al14O25:Eu2+ (SAE) and a second phosphor having the formula(Tb1-x-yAxREy)3DzO12, where A is a member selected from the group consisting of Y, La, Gd, and Sm; RE is a member selected from the group consisting of Ce, Pr, Nd, Sm, Eu, Gd, Dy, Ho, Er, Tm, Yb, and Lu; D is a member selected from the group consisting of Al, Ga, and In; x is in the range from 0 to about 0.5, y is in the range from about 0 to about 0.2, and z is in the range from about 4 to about 5; the phosphor blend radiationally coupled to the semiconductor light source; wherein the phosphor is capable of absorbing the radiation emitted by the semiconductor light source and converting the radiation into white light. 2. The lighting apparatus of claim 1, wherein x is from about 0 to about 0 2.3. The lighting apparatus of claim 1, wherein z is from about 4.6 to about 5.4. The lighting apparatus of claim 1, wherein the second phosphor has the formula Tb3Al4.9O12:Ce.5. The lighting apparatus of claim 1, wherein the white light has coordinates on the CIE chromaticity diagram wherein x is in the range 0.240-0.260 and y is in the range 0.340-0.360.6. The lighting apparatus of claim 1, the semiconductor light source is a light emitting diode (LED).7. The lighting apparatus of claim 6, wherein the LED comprises a nitride compound semiconductor represented by the formula IniGajAlkN, where 0?i; 0?j, 0?K, and i+j+k=1.8. The lighting apparatus of claim 1, wherein the phosphor is coated on the surface of the semiconductor light source.9. The lighting apparatus of claim 1, further comprising an encapsulant surrounding the semiconductor light source and the phosphor.10. The lighting apparatus of claim 1, further comprising a reflector cup.11. Method for forming a lighting apparatus, the method comprising the steps of:providing a blue LED capable of emitting radiation having a wavelength of from about 460 to about 470 nm; radiationally coupling a phosphor blend comprising Sr4Al14O25:Eu2+ (SAE) and a second phosphor having the formula(Tb1-x-yAxREy)3DzO12, where A is a member selected from the group consisting of Y, La, Gd, and Sm; RE is a member selected from the group consisting of Ce, Pr, Nd, Sm, Eu, Gd, Dy, Ho, Er, Tm, Yb, and Lu; D is a member selected from the group consisting of Al, Ga, and In; x is in the range from 0 to about 0.5, y is in the range from about 0 to about 0.2, and z is in the range from about 4 to about 5, to the semiconductor light source; wherein the phosphor is capable of absorbing the radiation emitted by the semiconductor light source and converting the radiation into white light having coordinates on the CIE chromaticity diagram wherein x is in the range 0.240-0.260 and y is in the range 0.340-0.360.