Shape memory alloy and method of treating the same
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
C22F-001/10
C22K-001/00
출원번호
US-0244524
(2002-09-17)
우선권정보
JP-0204927 (2000-07-06)
발명자
/ 주소
Homma, Dai
출원인 / 주소
Toki Corporation Kabushiki Kaisha
대리인 / 주소
Birch, Stewart, Kolasch &
인용정보
피인용 횟수 :
14인용 특허 :
7
초록▼
A method of treating a shape memory alloy to improve its various characteristics and to cause it to exhibit a two-way shape memory effect. A raw shape memory alloy having a substantially uniformly fine-grained crystal structure is prepared and then its crystal orientations are arranged substantially
A method of treating a shape memory alloy to improve its various characteristics and to cause it to exhibit a two-way shape memory effect. A raw shape memory alloy having a substantially uniformly fine-grained crystal structure is prepared and then its crystal orientations are arranged substantially in a direction suitable for an expected operational direction, such as tensile or twisting direction or the like, in which the shape memory alloy is expected to move when used in an actuator after the completion of the treatment.
대표청구항▼
1. A shape memory alloy being polycrystallane and having a substantially uniformly fine-grained crystal structure, crystal orientations thereof being arranged substantially along a direction suitable for an expected operational direction wherein said shape memory alloy is selected from the group con
1. A shape memory alloy being polycrystallane and having a substantially uniformly fine-grained crystal structure, crystal orientations thereof being arranged substantially along a direction suitable for an expected operational direction wherein said shape memory alloy is selected from the group consisting of a wire having a solid round cross section, a plate, and a coil, and wherein said shape memory alloy is prepared by a process comprising the steps of:(a) providing a raw shape memory alloy having a substantially uniformly fine-grained crystal structure; and (b) arranging crystal orientations of said raw shape memory alloy substantially along a direction suitable for an expected operational direction wherein step (a) comprises the step of: (c) heating said raw shape memory alloy in an amorphous state or a state similar thereto to the temperature at which recrystallization begins or a little above for a short period of time, with a stress applied to said raw shape memory alloy in said expected operational direction at least in the stage where a recovery recrystallization begins, to produce a substantially uniform fine-grained crystal structure with an anisotropy in said expected operational direction, while relaxing the internal stress generated in said raw shape memory alloy in said expected operational direction; and step (b) comprises the steps of: (d) subjecting said raw shape memory alloy to a high level of deformation by means of a stress in said expected operational direction at a very low temperature at which the austenite phase does not remain in said raw shape memory alloy so that a slide deformation is introduced into the crystal grains of said raw shape memory alloy which have been transformed completely into the martensite phase within a reversible range along the direction of said stress; (e) heating said raw shape memory alloy to a temperature between Af and the recrystallization temperature with a stress applied to said raw shape memory alloy in said expected operational direction so that the directions of reversible slip motions of the respective crystal grains of said raw shape memory alloy are arranged in a direction suitable for said expected operational direction. 2. A shape memory alloy as set forth in claim 1, wherein the average grain diameter of crystals is 10 microns or less.3. A shape memory alloy as set forth in claim 1, wherein prior to step (c), said raw shape memory alloy is subject to a severe cold working so that the crystal structure thereof is destructed and is brought to a state similar to an amorphous state.4. A shape memory alloy as set forth in claim 1, wherein said shape memory alloy is an intermetallic compound.5. A shape memory alloy as set forth in claim 4, wherein said shape memory alloy is a Ti?Ni based alloy.6. A shape memory alloy as set forth in claim 4, wherein said shape memory alloy is a Ti?Ni?Cu based alloy.7. A shape memory alloy as set forth in claim 1, wherein said expected operational direction is a tensile direction.8. A shape memory alloy as set forth in claim 1, wherein said expected operational direction is a torsion direction.9. A shape memory alloy as set forth in claim 1, wherein said shape memory alloy is in a form of a wire.10. A shape memory alloy being polycrystalline and having a substantially uniformly fine-grained crystal structure, crystal orientations thereof being arranged substantially along a direction suitable for an expected operational direction wherein said shape memory alloy is selected from the group consisting of a wire having a solid round cross section, a plate, and a coil, andwherein said shape memory alloy is prepared by a process comprising the steps of:(g) subjecting a raw shape memory alloy having an anisotropy in an expected operational direction to a high level of deformation by means of a stress in said expected operational direction at a very low temperature at which the austenite phase does not remain in said raw shape memory alloy so that a slide deformation is introduced into the crystal grains of said raw shape memory alloy which have been transformed completely into the martensite phase within a reversible range along the direction of said stress; (h) heating said raw shape memory alloy to a temperature between the austenite transformation terminate temperature Af and the recrystallization temperature with a stress applied to said raw shape memory alloy in said expected operational direction so that the directions of reversible slip motions of the respective crystal grains of said raw shape memory alloy are arranged in a direction suitable for said expected operational direction. 11. A shape memory alloy as set forth in claim 10, wherein the average grain diameter of crystals is 10 microns or less.12. A shape memory alloy as set forth in claim 10, wherein said expected operational direction is a tensile direction.13. A shape memory alloy as set forth in claim 10, wherein said expected operational direction is a torsion direction.14. A shape memory alloy as set forth in claim 10, wherein said shape memory alloy is in a form of a wire.15. A shape memory alloy as set forth in claim 10, wherein said shape memory alloy is an intermetallic compound.16. A shape memory alloy as set forth in claim 15, wherein said shape memory alloy is a Ti?Ni based alloy.17. A shape memory alloy as set forth in claim 15, wherein said shape memory alloy is a Ti?Ni?Cu based alloy.18. A method of making a shape memory alloy that is polycrystalline and has a substantially uniformly fine-grained crystal structure, crystal orientations thereof being arranged substantially along a direction suitable for an expected operational direction wherein said shape memory alloy is selected from the group consisting of a wire having a solid round cross section, a plate, and a coil, and wherein said method comprises the steps of:(a) providing a raw shape memory alloy having a substantially uniformly fine-grained crystal structure; and (b) arranging crystal orientations of said raw shape memory alloy substantially along a direction suitable for an expected operational direction wherein step (a) comprises the step of: (c) heating said raw shape memory alloy in an amorphous state or a state similar thereto to the temperature at which recrystallization begins or a little above for a short period of time, with a stress applied to said raw shape memory alloy in said expected operational direction at least in the stage where a recovery recrystallization begins, to produce a substantially uniform fine-grained crystal structure with an anisotropy in said expected operational direction, while relaxing the internal stress generated in said raw shape memory alloy in said expected operational direction; and step (b) comprises the steps of: (d) subjecting said raw shape memory alloy to a high level of deformation by means of a stress in said expected operational direction at a very low temperature at which the austenite phase does not remain in said raw shape memory alloy so that a slide deformation is introduced into the crystal grains of said raw shape memory alloy which have been transformed completely into the martensite phase within a reversible range along the direction of said stress; (e) heating said raw shape memory alloy to a temperature between Af and the recrystallization temperature with a stress applied to said raw shape memory alloy in said expected operational direction so that the directions of reversible slip motions of the respective crystal grains of said raw shape memory alloy are arranged in a direction suitable for said expected operational direction. 19. The method as set forth in claim 18, wherein the average grain diameter of crystals is 10 microns or less.20. The method as set forth in claim 18, wherein prior to step (c), said raw shape memory alloy is subject to a severe cold working so that the crystal structure thereof is destructed and is brought to a state similar to an amorphous state.21. The method as set forth in claim 18, wherein said shape memory alloy is an intermetallic compound.22. The method as set forth in claim 21, wherein said shape memory alloy is a Ti?Ni based alloy.23. The method as set forth in claim 21, wherein said shape memory alloy is a Ti?Ni?Cu based alloy.
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