초록

The present invention relates to a method for forming a planar conductive surface on a wafer. In one aspect, the present invention uses a no-contact process with electrochemical deposition, followed by a contact process with electrochemical mechanical deposition.

대표청구항 ▼

1. An electrochemical processing method for operating upon a wafer, the wafer having a top surface with first and second cavities disposed thereon, the first cavity having a narrower width than the second cavity, and a conductive layer having a conductive top surface associated therewith disposed on

1. An electrochemical processing method for operating upon a wafer, the wafer having a top surface with first and second cavities disposed thereon, the first cavity having a narrower width than the second cavity, and a conductive layer having a conductive top surface associated therewith disposed on the top surface of the wafer and on the first and second cavities, the method comprising:performing electrochemical deposition on the conductive layer of the wafer to result in at least the first cavity being at least partially filled with conductive material; and performing electrochemical mechanical deposition on the conductive layer of the wafer in which the first cavity is at least partially filled with more conductive material to result in at least some of any remaining cavity within the first and second cavities being further filled with more conductive material, wherein physical contact and relative motion is maintained between the conductive top surface of the conductive layer disposed over the top surface of the wafer and a workpiece surface influencing device for at least a period of the electrochemical mechanical deposition. 2. The method according to claim 1 wherein the step of performing electrochemical deposition and the step of performing electrochemical mechanical deposition use a same electrolyte solution.3. The method according to claim 1 wherein the steps of performing electrochemical deposition and performing electrochemical mechanical deposition are performed in a same process module.4. The method according to claim 3, wherein during at least a substantial period of the electrochemical deposition, deposition occurs without physical contact between the wafer and the workpiece surface influencing device.5. The method according to claim 4, wherein during the substantial period the electrochemical deposition occurs with the workpiece surface influencing device spaced a distance from the wafer, thereby allowing for the workpiece surface influencing device to operate as a shaping plate.6. The method according to claim 3 wherein the step of performing electrochemical deposition occurs so that during substantially an entire period thereof the electrochemical deposition occurs without physical contact between the wafer and the workpiece surface influencing device.7. The method according to claim 6 wherein during substantially an entire period that the step of performing electrochemical mechanical deposition is performed the physical contact and the relative motion is maintained between the conductive top surface of the conductive layer disposed over the top surface of the wafer and the workpiece surface influencing device.8. The method according to claim 1 wherein during substantially an entire period that the step of performing electrochemical mechanical deposition is performed the physical contact and the relative motion is maintained between the conductive top surface of the conductive layer disposed over the top surface of the wafer and the workpiece surface influencing device.9. The method according to claim 8 wherein the step of performing electrochemical deposition occurs so that during an entire period of the electrochemical deposition, deposition occurs without physical contact between the wafer and any workpiece surface influencing device.10. The method according to claim 1 wherein the step of performing electrochemical deposition minimizes the formation of a conductive bump formed over the first cavity by applying a reverse pulse potential.11. The method according to claim 1 wherein the step of performing electrochemical mechanical deposition results in the conductive top surface of the conductive layer being planar and each of the first and second cavities being completely filled.12. The method according to claim 1 wherein the step of performing electrochemical deposition is performed until a depth of the first cavity is less than the width of the first cavity.13. The method according to claim 1, further comprising the step of performing electrochemical etching of the conductive layer after the step of performing electrochemical mechanical deposition.14. The method according to claim 13 wherein during at least a period during the step of electrochemical etching, the electrochemical etching occurs without physical contact between the wafer and the workpiece surface influencing device.15. The method according to claim 13 wherein the step of performing electrochemical etching of the conductive layer uses electrochemical mechanical etching and during the step of performing electrochemical mechanical etching physical contact and relative motion is maintained between the conductive top surface of the conductive layer disposed over the top surface of the wafer and the workpiece surface influencing device for at least a period of the electrochemical mechanical etch.16. The method according to claim 13 wherein the step of performing electrochemical etching uses an electrolyte solution that is also used during the steps of performing electrochemical deposition and performing electrochemical mechanical deposition.17. The method according to claim 1 wherein, after the step of performing electrochemical mechanical deposition, repeating at least one of the steps of performing electrochemical deposition and performing electrochemical mechanical deposition until the any remaining cavity portion of the first and second cavities are completely filled with the conductive material.18. The method according to claim 1 wherein the conductive material is copper.19. The method according to claim 1 wherein, during the step of performing electrochemical mechanical deposition, the relative motion between the conductive top surface of the conductive layer disposed over the top surface of the wafer and the workpiece surface influencing device includes rotational motion.20. The method according to claim 19 wherein, during the step of performing electrochemical mechanical deposition, the relative motion between the conductive top surface of the conductive layer disposed over the top surface of the wafer and the workpiece surface influencing device includes lateral motion.21. The method according to claim 20 wherein, during the step of performing electrochemical mechanical deposition, the workpiece surface influencing device is fixed in a stationary position.22. The method according to claim 19 wherein, during the step of performing electrochemical mechanical deposition, the workpiece surface influencing device is fixed in a stationary position.