초록 ▼

A method of depositing a thin film on a substrate in a semiconductor device using Atomic Layer Deposition (ALD) process parameters exposes the substrate to at least one adherent material in a quantity sufficient for the material to adsorb onto the substrate and thereby form an initiation layer. The

A method of depositing a thin film on a substrate in a semiconductor device using Atomic Layer Deposition (ALD) process parameters exposes the substrate to at least one adherent material in a quantity sufficient for the material to adsorb onto the substrate and thereby form an initiation layer. The initiation layer presents at least one first reactive moiety which is then chemically reacted with at least one first reaction material using atomic layer deposition conditions to form a second reactive moiety. The second reactive moiety is then chemically reacted with at least one second reaction material under process conditions sufficient to form a reaction layer over the initiation layer. The process may be repeated to form successive reaction layers over the initiation layer. The adherent material constituting the initiation layer is preferably one which is not substantially degraded by the atomic layer deposition parameters. The initiation layer together with one or more reaction layer(s) constitutes the final film.

대표청구항 ▼

1. A semiconductor device, comprising:a substrate; and a circuit structure supported by said substrate, wherein said circuit structure comprising a film wherein said film comprises an adherent material layer and a reaction material layer, said reaction material layer being chemically bonded to said

1. A semiconductor device, comprising:a substrate; and a circuit structure supported by said substrate, wherein said circuit structure comprising a film wherein said film comprises an adherent material layer and a reaction material layer, said reaction material layer being chemically bonded to said adherent material layer. 2. The semiconductor device of claim 1, wherein said reaction material layer is chemically bonded to said adherent material layer at by a reactive moiety component of said adherent material layer.3. The semiconductor device of claim 2, wherein said reactive moiety component comprises a chemical ligand group.4. The semiconductor device of claim 2, wherein said reactive moiety component comprises a titanium, nitrogen and hydrogen containing linkage unit.5. The device of claim 2, wherein said reactive moiety component comprises titanium, nitrogen, tungsten, and fluorine bonds.6. The semiconductor device of claim 1, wherein said adherent material layer and said reaction material layer are different materials.7. The semiconductor device of claim 1, wherein said semiconductor device is part of a processor-based systems comprising:a processor, said circuit structure being electrically coupled to said processor, wherein said semiconductor device further comprises an insulation layer over said substrate and a conductive plug in said insulation layer and in contact with said substrate and a barrier layer over said conductive plug, said barrier layer comprising said film. 8. The semiconductor device of claim 1, wherein said adherent material layer comprises a titanium-containing compound.9. The system semiconductor device of claim 1, wherein said reaction material layer comprises WNx.10. The system semiconductor device of claim 1, wherein said circuit structure is part of a memory circuit.