IPC분류정보
국가/구분 |
United States(US) Patent
등록
|
국제특허분류(IPC7판) |
|
출원번호 |
US-0189323
(2002-07-03)
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발명자
/ 주소 |
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출원인 / 주소 |
|
대리인 / 주소 |
|
인용정보 |
피인용 횟수 :
23 인용 특허 :
43 |
초록
Light system useful for activating light-activated materials are disclosed. Various configurations of light emitting semiconductor chips and heat sinks are disclosed, as well as various structures and methods for driving, controlling and using them, and materials and structures usable therewith.
대표청구항
▼
1. A light for activating a light-activated material comprising:a light module capable of emitting light useful in activating a light-activated material,a primary heat sink in said light module,said primary heat sink having heat conductance qualities,a well in said primary heat sink,said well having
1. A light for activating a light-activated material comprising:a light module capable of emitting light useful in activating a light-activated material,a primary heat sink in said light module,said primary heat sink having heat conductance qualities,a well in said primary heat sink,said well having a bottom,said well having an angled side wall,said angled side wall being capable of reflecting light,at least one semiconductor chip located in said well of said primary heat sink,said semiconductor chip being capable of emitting light of a wavelength that is useful in activating a light activated material,said semiconductor chip being affixed to said well bottom by use of a thermally conductive adhesive,a dome over said well and covering said chip,said dome serving to prevent contamination of said chip by exposure of said chip to dirt,said dome serving to prevent mechanical damage to said chip,said dome being constructed at least in part of a material that is translucent to light of the wavelength(s) emitted by said chip;a secondary heat sink, said secondary heat sink having a longitudinal axis,said secondary heat sink having the ability to draw heat away from said primary heat sink and dissipate such heat, andsaid primary heat sink having the ability to draw heat away from said chip;wherein at least some light emitted from said chip that strikes said well wall is reflected by said well wall in a direction where it may be used to activate a light-activated material;wherein said semiconductor chip is geometrically oriented with respect to said elongate heat sink longitudinal axis so that light emitted directly forward from the front of said chip travels in a direction that is at an angle of from about 30 degrees to about 150 with respect to said longitudinal axis.2. A light for activating a light-activated material as recited in claim 1 wherein said adhesive is an epoxy that was formed from a combination of a primer and an activator.3. A light for activating a light-activated material as recited in claim 2 wherein said primer includes a heat conductive agent.4. A light for activating a light-activated material as recited in claim 2 wherein said primer includes an electrically insulative agent.5. A light for activating a light-activated material as recited in claim 2 wherein said primer includes a material selected from the group consisting of aluminum hydroxide and aluminum oxide.6. A light for activating a light-activated material as recited in claim 2 wherein said primer includes both an electrically insulative agent and a heat conductive agent.7. A light for activating a light-activated material as recited in claim 2 wherein said primer includes a bonding agent.8. A light for activating a light-activated material as recited in claim 7 wherein said bonding agent is selected from the group consisting of polyurethane methacrylate and hydroxylalkyl methacrylate.9. A light for activating a light-activated material as recited in claim 2 wherein said activator includes a catalyst.10. A light for activating a light-activated material as recited in claim 2 wherein said activator includes an ingredient selected from the group consisting of n-heptane, aldheyde-aniline condensate, isopropyl alcohol, and an organocopper compound.11. A light for activating a light-activated material as recited in claim 1 wherein said adhesive possesses the following characteristics: (i) formation of a strong bond, (ii) heat conductance, (iii) electrically insulative.12. A light for activating a light-activated material as recited in claim 1 wherein said adhesive is light reflective.13. A light for activating a light-activated material as recited in claim 12 wherein said adhesive includes a material selected from the group consisting of silver and aluminum.14. A light for activating a light-activated material as recited in claim 1 wherein said optical dome focuses light emitted by said chip.15. A light for activating a light-activated material as recited in claim 1 wherein said optical dome includes a material selected from the group consisting of plastic, polycarbonate, epoxy and glass.16. A light for activating a light-activated material as recited in claim 1 wherein said optical dome provides for light emission along an arc of a circle defined by an angle φ.17. A light for activating a light-activated material as recited in claim 16 wherein said optical dome serves to modify light output from said chip into a beam of a desired configuration.18. A light for activating light-activated materials as recited in claim 1 wherein said chip is selected from the group consisting of light emitting diode chips, laser chips, light emitting diode chip arrays, diode laser chips, diode laser chip arrays, surface emitting laser chips, edge emitting laser chips, and VCSEL chips.19. A light for activating a light-activated material comprising:a light module capable of emitting light useful in activating a light-activated material,a primary heat sink in said light module,said primary heat sink having heat conductance qualities,a well in said primary heat sink,said well having a bottom,said well having an angled side wall,said angled side wall being capable of reflecting light,at least one semiconductor chip located in said well of said primary heat sink,said semiconductor chip being capable of emitting light of a wavelength that is useful in activating a light activated material,a dome over said well and covering said chip,said dome serving to prevent contamination of said chip by exposure of said chip to dirt,said dome serving to prevent mechanical damage to said chip,said dome being constructed at least in part of a material that is translucent to light of the wavelength(s) emitted by said chip;a secondary heat sink, said secondary heat sink having a longitudinal axis,said secondary heat sink having the ability to draw heat away from said primary heat sink and dissipate such heat, andsaid primary heat sink having the ability to draw heat away from said chip;wherein at least some light emitted from said chip that strikes said well wall is reflected by said well wall in a direction where it may be used to activate a light-activated material;wherein said semiconductor chip is geometrically oriented with respect to said secondary heat sink longitudinal axis so that light emitted directly forward from the front of said chip travels in a direction that is at an angle of from about 30 degrees to about 150 degrees with respect to said longitudinal axis.20. A light for activating a light-activated material comprising:a light module capable of emitting light useful in activating a light-activated material,a primary heat sink in said light module,said primary heat sink having heat conductance qualities,at least one semiconductor chip located on said primary heat sink,said semiconductor chip being capable of emitting light of a wavelength that is useful in activating a light activated material,a secondary heat sink, said secondary heat sink having an elongate axis,said primary heat sink being affixed to said secondary heat sink,said secondary heat sink having the ability to draw heat away from said primary heat sink and dissipate such heat, andsaid primary heat sink having the ability to draw heat away from said chip;wherein at least some light emitted from said chip that strikes said well wall is reflected by said well wall in a direction where it may be used to activate a light-activated material;wherein said semiconductor chip is geometrically oriented with respect to said elongate heat sink longitudinal axis so that light emitted directly forward from the front of said chip travels in a direction that is at an angle of from about 30 degrees to about 150 degrees with respect to said longitudinal axis.
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