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| 국가/구분 | United States(US) Patent 등록 |
|---|---|
| 국제특허분류(IPC7판) |
|
| 출원번호 | US-0124082 (2002-04-17) |
| 발명자 / 주소 |
|
| 출원인 / 주소 |
|
| 대리인 / 주소 |
|
| 인용정보 | 피인용 횟수 : 471 인용 특허 : 41 |
A cutting instrument including a metal blade has a recess formed therein and a semiconductor substrate affixed to the blade in the recess. The semiconductor substrate includes at least one sensor formed thereon. The sensor formed on the semiconductor substrate may comprise at least one or an array o
A cutting instrument including a metal blade has a recess formed therein and a semiconductor substrate affixed to the blade in the recess. The semiconductor substrate includes at least one sensor formed thereon. The sensor formed on the semiconductor substrate may comprise at least one or an array of a strain sensors, pressure sensors, nerve sensors, temperature sensors, density sensors, accelerometers, and gyroscopes. The cutting instrument may also further include a handle wherein the blade is affixed to the handle and the semiconductor substrate is electrically coupled to the handle. The handle may then be coupled, either physically or by wireless transmission, to a computer that is adapted to display information to a person using the cutting instrument based on signals generated by one or more of the sensors formed on the semiconductor substrate. The computer or handle may also be adapted to store data based on the signals generated by one or more of the sensors. A method of making said cutting instrument includes the steps of at least one sensor being formed on a semiconductor wafer and a layer of photoresist being applied on a top side of the semiconductor wafer according to a pattern that matches the defined shape of the semiconductor substrate. The portion of the semiconductor wafer not covered by the photoresist is removed and thereafter the photoresist is removed from the semiconductor wafer, thereby leaving the semiconductor substrate having a defined shape and at least one sensor formed thereon. The semiconductor substrate having a defined shape and at least one sensor formed thereon is then affixed to a metal blade in a recess formed in said blade.
1. A method of making a cutting instrument including a semiconductor substrate having a defined shape and at least one sensor formed thereon, comprising the steps of:forming at least one sensor on a semiconductor wafer;applying a layer of photoresist on a top side of said semiconductor wafer accordi
1. A method of making a cutting instrument including a semiconductor substrate having a defined shape and at least one sensor formed thereon, comprising the steps of:forming at least one sensor on a semiconductor wafer;applying a layer of photoresist on a top side of said semiconductor wafer according to a pattern, said pattern matching said defined shape of said semiconductor substrate;removing the portion of said semiconductor wafer not covered by said photoresist;removing said photoresist from said semiconductor wafer, thereby leaving said semiconductor substrate having a defined shape and at least one sensor formed thereon; andaffixing said semiconductor substrate having a defined shape and at least one sensor formed thereon to a metal blade in a recess formed in said blade.2. A method according to claim 1, wherein said semiconductor wafer comprises a silicon-on-insulator wafer.3. A method according to claim 2, wherein said silicon-on-insulator wafer comprises a top layer of silicon, a middle layer of insulating material, and a bottom layer of silicon, further comprising the step of removing said bottom layer of silicon after said step of applying said photoresist.4. A method according to claim 3, wherein said steps of removing the portion of said semiconductor wafer not covered by said photoresist and removing said bottom laya of silicon is performed using an etching process.5. A method according to claim 4, wherein said etching process uses a deep reactive ion etcher.6. A method according to claim 1, wherein said step of removing the portion of said semiconductor wafer not covered by said photoresist is performed using an etching process.7. A method according to claim 6, wherein said etching process uses a deep reactive ion etcher.8. A method according to claim 1, wherein said semiconductor wafer comprises a silicon wafer.9. A method according to claim 8, further comprising the step of grinding said silicon wafer down to a desired thickness before said affixing step.10. A method according to claim 1, further comprising the step of forming said recess in said blade.11. A method according to claim 1, wherein said blade has an edge, a portion of said recess follows said edge, and said defined shape is such that when said semiconductor substrate is affixed to said blade in said recess, a portion of said semiconductor substrate follows said edge.12. A method according to claim 1, further comprising the step of attaching said blade having said semiconductor substrate affixed thereto to a handle.13. A method according to claim 12, wherein said attaching step further comprises electrically coupling said blade having said semiconductor substrate affixed thereto to said handle.14. A method according to claim 13, further comprising the step of electrically coupling said handle to a computer.
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