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Disclosed is a method and apparatus that features deposition of tantalum films employing sequential deposition techniques, such as Atomic Layer Deposition (ALD). The method includes serially exposing a substrate to a flow of a nitrogen-containing gas, such as ammonia NH3, and a tantalum containing g

Disclosed is a method and apparatus that features deposition of tantalum films employing sequential deposition techniques, such as Atomic Layer Deposition (ALD). The method includes serially exposing a substrate to a flow of a nitrogen-containing gas, such as ammonia NH3, and a tantalum containing gas. The tantalum-containing gas is formed from a precursor, (tBuN)Ta(NEt2)3 (TBTDET), which is adsorbed onto the substrate. Prior to adsorption of TBTDET onto the substrate layer, the TBTDET precursor is heated within a predefined temperature range.

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1. A method for forming a tantalum-containing material on a substrate, comprising:heating a substrate to a deposition temperature within a process chamber;heating a tantalum precursor within an ampoule to a predetermined temperature in a range from about 65° C. to about 150° C. to form a heated tant

1. A method for forming a tantalum-containing material on a substrate, comprising:heating a substrate to a deposition temperature within a process chamber;heating a tantalum precursor within an ampoule to a predetermined temperature in a range from about 65° C. to about 150° C. to form a heated tantalum precursor;flowing the heated tantalum precursor into a vaporizer to form a tantalum-containing gas;flowing the tantalum-containing gas through a conduit and into the process chamber while maintaining the conduit at a temperature in a range from about 65° C. to about 150° C.; andexposing the substrate to at least sequential pulses of the tantalum-containing gas and a nitrogen precursor gas during an ALD process to deposit a tantalum nitride material thereon.2. The method of claim 1, wherein the substrate is exposed to a pretreatment process to form a treated surface containing a chemical functional group selected from the group consisting of hydroxyl, alkoxy, aminos, amidos, derivatives thereof and combinations thereof before the ALD process.3. The method of claim 1, wherein the deposition temperature is in a range from about 250° C. to about 450° C.4. The method of claim 3, wherein a copper-containing layer is deposited on the tantalum nitride material by an electroplating process.5. The method of claim 3, wherein a seed layer or a nucleation layer is deposited on the tantalum nitride material by a vapor deposition process selected from the group consisting of an ALD process, a CVD process, a PVD process and combinations thereof.6. The method of claim 3, wherein a copper seed layer and a copper bulk layer are deposited on the substrate comprising the tantalum nitride material by a deposition process independently selected from the group consisting of an electroplating process, an ALD process, a CVD process, a PVD process and combinations thereof.7. The method of claim 3, wherein the tantalum nitride material comprises tantalum nitride with a chemical formula TaNx, wherein x is in a range from about 0.4 to about 2.8. The method of claim 3, wherein the tantalum nitride material comprises tantalum nitride with a chemical formula of about Ta6N2.57.9. A method for forming a tantalum-containing material on a substrate, comprising:exposing a substrate to a pretreatment process to form a treated surface containing a chemical functional group selected from the group consisting of hydroxyl, alkoxy, aminos, amidos, derivatives thereof and combinations thereof;heating the substrate to a deposition temperature within a process chamber;heating a tantalum precursor within an ampoule to a predetermined temperature in a range from about 65° C. to about 150° C. to form a heated tantalum precursor;flowing the heated tantalum precursor and a carrier gas into a vaporizer to form a tantalum-containing gas;flowing the tantalum-containing gas through a conduit and into the process chamber while maintaining the conduit at a temperature in a range from about 65° C. to about 150° C.; andexposing the substrate to at least sequential pulses of the tantalum-containing gas and a nitrogen precursor gas during an ALD process to deposit a tantalum nitride material thereon.10. The method of claim 9, wherein a copper-containing layer is deposited on the tantalum nitride material by an electroplating process.11. The method of claim 9, wherein a seed layer or a nucleation layer is deposited on the tantalum nitride material by a vapor deposition process selected from the group consisting of an ALD process, a CVD process, a PVD process and combinations thereof.12. The method of claim 9, wherein a copper seed layer and a copper bulk layer are deposited on the substrate comprising the tantalum nitride material by a deposition process independently selected from the group consisting of an electroplating process, an ALD process, a CVD process, a PVD process and combinations thereof.13. The method of claim 9, wherein the deposition temperature is in a range from about 250° C. to about 450° C.14. The method of claim 13, wherein the tantalum nitride material comprises tantalum nitride with a chemical formula TaNx, wherein x is in a range from about 0.4 to about 2.15. The method of claim 13, wherein the tantalum nitride material comprises tantalum nitride with a chemical formula of about Ta6N2.57.16. A method for forming a tantalum-containing material on a substrate, comprising:heating a substrate to a deposition temperature within a process chamber;heating a tantalum precursor within an ampoule to a predetermined temperature in a range from about 65° C. to about 150° C. and forming a tantalum-containing gas;flowing the tantalum-containing gas through a conduit and into the process chamber while maintaining the conduit at a temperature in a range from about 65° C. to about 150° C.;exposing the substrate to at least sequential pulses of the tantalum-containing gas and a nitrogen precursor gas during an ALD process to deposit a tantalum nitride material thereon; anddepositing a copper seed layer and a copper bulk layer on the substrate.17. The method of claim 16, wherein the copper seed layer is deposited on the tantalum nitride material by an electroplating process.18. The method of claim 16, wherein the deposition temperature is in a range from about 250° C. to about 450° C.19. The method of claim 18, wherein the tantalum nitride material comprises tantalum nitride with a chemical formula TaNx, wherein x is in a range from about 0.4 to about 2.20. The method of claim 18, wherein the tantalum nitride material comprises tantalum nitride with a chemical formula of about Ta6N2.57.