초록 ▼

An inverter circuit which is a representative example of the logic circuit includes a p-channel A-MOS transistor and an n-channel transistor. The gain coefficient β of the p-channel A-MOS transistor and n-channel transistor changes according to a voltage on a control gate. The control gate of the p-

An inverter circuit which is a representative example of the logic circuit includes a p-channel A-MOS transistor and an n-channel transistor. The gain coefficient β of the p-channel A-MOS transistor and n-channel transistor changes according to a voltage on a control gate. The control gate of the p-channel A-MOS transistor and n-channel MOS transistor is connected to an output node of the inverter circuit, and the normal MOS gate is connected to an input node of the inverter circuit. Thus, the ON resistance of the p-channel A-MOS transistor and n-channel transistor is automatically modulated to decrease as the source-drain voltage increases.

대표청구항 ▼

1. A semiconductor integrated circuit device comprising a semiconductor logic circuit, said semiconductor logic circuit including a semiconductor device having a gain coefficient which is electrically modulatable in a continuously variable manner, whereinsaid semiconductor device is a field-effect t

1. A semiconductor integrated circuit device comprising a semiconductor logic circuit, said semiconductor logic circuit including a semiconductor device having a gain coefficient which is electrically modulatable in a continuously variable manner, whereinsaid semiconductor device is a field-effect transistor, andthe gain coefficient of said field-effect transistor is modulated according to a voltage between the source and drain of said field-effect transistor.2. semiconductor integrated circuit device comprising a semiconductor logic circuit, said semiconductor logic circuit including a semiconductor device having a gain coefficient which is electrically modulatable in a continuously variable manner, whereinsaid semiconductor device is a field-effect transistor, andthe gain coefficient of said field-effect transistor decreases with decrease of a voltage between the source and drain of said field-effect transistor.3. semiconductor integrated circuit device comprising a semiconductor logic circuit, said semiconductor logic circuit including a semiconductor device having a gain coefficient which is electrically modulatable in a continuously variable manner, whereinsaid semiconductor device has a p-type MOS device with modulatable gain coefficient and an n-type MOS device with modulatable gain coefficient, andat least one of said p-type MOS device with modulatable gain coefficient and said n-type MOS device with modulatable gain coefficient has its control gate connected to an output node of said semiconductor logic circuit.4. A semiconductor integrated circuit device comprising a logic circuit providing, according to a result of a predetermined logical operation performed on an input which is at least one signal having one of a first level and a second level, one of said first level and said second level, to an output node,said logic circuit including a first field-effect transistor having a gain coefficient electrically modulatable in analogue manner, andsaid first field-effect transistor having a gate electrically connected between a first voltage corresponding to said first level and said output node and receiving one of (i) one of said at least one signal and (ii) a signal according to said at least one signal, transmitted to said gate.5. The semiconductor integrated circuit device according to claim 4, whereinthe gain coefficient of said first field-effect transistor changes according to a voltage between the source and drain of said first field-effect transistor.6. The semiconductor integrated circuit device according to claim 5, whereinthe gain coefficient of said first field-effect transistor decreases with decrease of said voltage between the source and drain.7. The semiconductor integrated circuit device according to claim 4, whereinsaid first field-effect transistor further has a control gate electrically connected to said output node, andthe gain coefficient of said first field-effect transistor continuously changes according to a voltage applied to said control gate.8. The semiconductor integrated circuit device according to claim 4, whereinsaid logic circuit further includes a second field-effect transistor having a gain coefficient electrically modulatable in analogue manner and having a conductivity type opposite to that of said first field-effect transistor, andsaid second field-effect transistor further has a gate electrically connected between a second voltage corresponding to said second level and said output node and receiving one of (i) one of said at least one signal and (ii) a signal according to said at least one signal, transmitted to said gate.9. The semiconductor integrated circuit device according to claim 8, whereinsaid first and second field-effect transistors each further has a control gate,respective gain coefficients of said first and second field-effect transistors continuously change according to voltages respectively applied to respective control gates of said first and second field-effect transistors, andat least one of respective control gates of said first and second field-effect transistors is electrically connected to said output node.10. A semiconductor integrated circuit device comprising a semiconductor logic circuit, said semiconductor logic circuit including a semiconductor device having a gain coefficient which is electrically modulatable in analogue manner,wherein said semiconductor device is a field-effect transistor, andthe gain coefficient of said field-effect transistor is modulated according to a voltage between the source and drain of said field-effect transistor.11. The semiconductor integrated circuit device according to claim 10, whereinthe gain coefficient of said field-effect transistor decreases with decrease of a voltage between the source and drain of said field-effect transistor.12. The semiconductor integrated circuit device according to claim 10, whereinsaid semiconductor device has a p-type MOS device with modulatable gain coefficient and an n-type MOS device with modulatable gain coefficient, andat least one of said p-type MOS device with modulatable gain coefficient and said n-type MOS device with modulatable gain coefficient has its control gate connected to an output node of said semiconductor logic circuit.