IPC분류정보
국가/구분 |
United States(US) Patent
등록
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국제특허분류(IPC7판) |
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출원번호 |
US-0326864
(2002-12-20)
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발명자
/ 주소 |
- Chrysler,Gregory M.
- Koning,Paul A.
- Jayaraman,Saikumar
- Hussein,Makarem A.
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출원인 / 주소 |
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대리인 / 주소 |
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인용정보 |
피인용 횟수 :
19 인용 특허 :
7 |
초록
▼
Apparatus and methods in accordance with the present invention utilize thermoelectric cooling (TEC) technology to provide enhanced power distribution and/or dissipation from a microelectronic die and/or microelectronic packages. Individual TEC devices are thermally interconnected with the microelect
Apparatus and methods in accordance with the present invention utilize thermoelectric cooling (TEC) technology to provide enhanced power distribution and/or dissipation from a microelectronic die and/or microelectronic packages. Individual TEC devices are thermally interconnected with the microelectronic die in a number of placement configurations, including between the microelectronic die and the heat sink, on the integrated heat spreader (IHS) inner surface, and on the IHS outer surface. TEC devices comprise p-and n-type semiconducting material created using similar process as the microcircuits. The TEC devices are located in various regions within or on the microelectronic die, including directly below the microcircuits, on the backside of the microelectronic die, and on a separate substrate of microelectronic die material fabricated apart from the microelectronic die and subsequently thermally coupled to the backside of the microelectronic die.
대표청구항
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What is claimed is: 1. A method, comprising: thermally coupling a second TEC substrate of two or more thermoelectric cooling devices with a microelectronic die; electrically connecting the two or more thermoelectric cooling devices in series; and thermally coupling a first TEC substrate of the two
What is claimed is: 1. A method, comprising: thermally coupling a second TEC substrate of two or more thermoelectric cooling devices with a microelectronic die; electrically connecting the two or more thermoelectric cooling devices in series; and thermally coupling a first TEC substrate of the two or more thermoelectric cooling devices with an inner surface of an integrated heat spreader. 2. A method, comprising: thermally coupling a second TEC substrate of two or more thermoelectric cooling devices with a microelectronic die; electrically connecting the two or more thermoelectric cooling devices in series; and wherein thermally coupling comprises thermally coupling the second TEC substrate of two or more thermoelectric cooling devices with an outer surface of an integrated heat spreader and thermally coupling the microelectronic die with the inside surface of the integrated heat spreader. 3. A method, comprising: thermally coupling a second TEC substrate of two or more thermoelectric cooling devices with a microelectronic die; electrically connecting the two or more thermoelectric cooling devices in series; and wherein each of the two or more thermoelectric cooling devices comprising one or more couples, each couple having a p-element of p-semiconducting material and an n-element of n-semiconducting material, the p-and n-elements electrically interconnected at the first TEC substrate and the p-and n-elements electrically insulated at the second TEC substrate, the p-element of one couple electrically interconnected with either a positive voltage lead or an n-element of an adjacent couple, and the n-element of the one couple electrically interconnected with either a negative voltage lead or a p-element of another adjacent couple. 4. A microelectronic package, comprising: a microelectronic die; a carrier substrate coupled to the microelectronic die; and one or more thermoelectric cooling devices, the one or more thermoelectric cooling devices having a first TEC substrate and a second TEC substrate, the microelectronic die thermally coupled with the second TEC substrate of the one or more thermoelectric cooling devices. 5. The microelectronic package of claim 4, further comprising: a heat sink thermally coupled with the first TEC substrate of the one or more thermoelectric cooling devices. 6. The microelectronic package of claim 4, further comprising: an integrated heat spreader having an inner side and an outer side, the inner side thermally coupled with the first TEC substrate of each of the one or more thermoelectric cooling devices. 7. The microelectronic package of claim 4, further comprising: an integrated heat spreader disposed between and thermally coupled with the microelectronic die and the second TEC substrate of each of the one or more thermoelectric cooling devices. 8. The microelectronic package of claim 4, wherein the one or more thermoelectric cooling devices further comprising one or more couples, each couple having a p-element and an n-element, the p-and n-elements electrically interconnected at the first TEC substrate and the p-and n-elements electrically insulated at the second TEC substrate, the p-element of one couple electrically interconnected with either the positive voltage lead or an n-electrode of an adjacent couple, and the n-element of the one couple electrically interconnected with either the negative voltage lead or a p-element of another adjacent couple. 9. A method, comprising: creating an array of a plurality of thermoelectric cooling devices onto a microelectronic die; and electrically connecting two or more of the plurality of thermoelectric cooling devices in series. 10. The method of claim 9, wherein creating an array of a plurality of thermoelectric cooling devices onto a microelectronic die comprises: creating the array of the plurality of thermoelectric cooling devices onto an active side of the microelectronic die prior to creating microcircuits onto the active side of the microelectronic die. 11. The method of claim 9, wherein creating an array of a plurality of thermoelectric cooling devices onto a microelectronic die comprises: creating the array of the plurality of thermoelectric cooling devices onto a back side of the microelectronic die. 12. The method of claim 9, wherein creating an array of a plurality of thermoelectric cooling devices onto a microelectronic die comprises: creating the array of the plurality of thermoelectric cooling devices onto a substrate, the substrate thermally coupled to a back side of the microelectronic die. 13. The method of claim 9, wherein the microelectronic die has a substrate and wherein creating an array of a plurality of thermoelectric cooling devices onto a microelectronic die comprises: creating the array of the plurality of thermoelectric cooling devices onto the substrate and coupling the substrate to a back side of the microelectronic die. 14. The method of claim 9, wherein each of the plurality of thermoelectric cooling devices created comprising one or more couples, each couple having a p-element and an n-element, the p-and n-elements electrically interconnected in series, the p-element of one couple electrically interconnected with either a positive voltage lead or an n-element of an adjacent couple, and the n-element of the one couple electrically interconnected with either a negative voltage lead or a p-element of another adjacent couple. 15. A microelectronic die, comprising: a microelectronic die substrate; a thermoelectric cooling device array layer having a plurality of thermoelectric cooling devices; and an active microcircuit layer having a plurality of microcircuits. 16. The microelectronic die of claim 15, wherein the thermoelectric cooling device array layer is disposed between the microelectronic die substrate and the active microcircuit layer. 17. The microelectronic die of claim 15, wherein the microelectronic die substrate is disposed between the thermoelectric cooling device array layer and the active microcircuit layer. 18. The microelectronic die of claim 15, wherein the thermoelectric cooling device array layer is thermally bonded to a first side of the microelectronic die substrate and the active microcircuit layer located on a second side of the microelectronic die substrate opposite of the first side. 19. The microelectronic die of claim 15, wherein the plurality of thermoelectric cooling devices comprise one or more couples, each couple having a p-element of p-semiconducting material and an n-element of n-semiconducting material, the p-and n-elements electrically interconnected at a first end and electrically insulated at a second end, the p-element of one couple electrically interconnected with either the positive voltage lead or an n-element of an adjacent couple, and the n-element of the one couple electrically interconnected with either the negative voltage lead or a p-element of another adjacent couple.
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