Micro-chimney and thermosiphon die-level cooling
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
F25B-029/00
F28F-007/00
출원번호
US-0042281
(2002-01-11)
발명자
/ 주소
Chrysler,Gregory M.
Maveety,James G.
출원인 / 주소
Intel Corporation
대리인 / 주소
Pillsbury Winthrop Shaw Pittman LLP
인용정보
피인용 횟수 :
4인용 특허 :
8
초록▼
A method and arrangement for dissipating heat from a localized area within a semiconductor die is presented. A semiconductor die is constructed and arranged to have at least one conduit portion therein. At least a portion of the conduit portion is proximate to the localized area. The conduit portion
A method and arrangement for dissipating heat from a localized area within a semiconductor die is presented. A semiconductor die is constructed and arranged to have at least one conduit portion therein. At least a portion of the conduit portion is proximate to the localized area. The conduit portion is at least partially filled with a heat-dissipating material. The conduit portion absorbs heat from the localized area and dissipates at least a portion of the heat away from the localized area. As such, thermal stress on the die is reduced, and total heat from the die is more readily dissipated.
대표청구항▼
What is claimed is: 1. A method for dissipating heat from a localized area within a semiconductor die, the method comprising: providing a semiconductor die constructed and arranged to include at least one conduit portion within the die, at least a portion of the conduit portion being proximate to t
What is claimed is: 1. A method for dissipating heat from a localized area within a semiconductor die, the method comprising: providing a semiconductor die constructed and arranged to include at least one conduit portion within the die, at least a portion of the conduit portion being proximate to the localized area, the conduit portion being at least partially filled with a heat-dissipating material; absorbing, by the conduit portion, heat from the localized area; and dissipating, by the conduit portion, at least a portion of the heat away from the localized area. 2. The method of claim 1, wherein the heat-dissipating material comprises a thermally conductive material. 3. The method of claim 2, wherein the dissipating includes spreading heat by the thermally conductive material. 4. The method of claim 2, wherein the thermally conductive material comprises copper. 5. The method of claim 2, wherein the thermally conductive material comprises silver. 6. The method of claim 1, wherein the localized area is proximate to a floating point unit in the die. 7. A semiconductor die comprising; at least one conduit disposed within the die a first portion of the conduit being proximate to a localized area, and a second portion of the conduit having an end portion at a face of the die; and a heat-dissipating material at least partially filling the conduit, wherein the conduit is constructed and arranged to absorb heat from the localized area and to dissipate at least a portion of the heat away from the localized area. 8. The semiconductor die of claim 7, wherein the conduit is substantially filled with the heat-dissipating material. 9. The semiconductor die of claim 8, wherein the heat-dissipating material comprises a thermally conductive material. 10. The semiconductor die of claim 9, wherein the thermally conductive material comprises copper. 11. The semiconductor die of claim 9, wherein the thermally conductive material comprises silver. 12. The semiconductor die of claim 7, wherein the conduit is cylindrical. 13. The semiconductor die of claim 7, wherein the conduit includes a hole. 14. The semiconductor die of claim 7, wherein the conduit includes a channel. 15. The semiconductor die of claim 7, wherein the conduit includes a via. 16. The semiconductor die of claim 7, wherein the conduit includes a slot. 17. A semiconductor die comprising; a microprocessor circuit; at least one conduit disposed within the die, a first portion of the conduit being proximate to the microprocessor circuit, and a second portion of the conduit having an end portion at a face of the die; and a heat-dissipating material at least partially filling the conduit, wherein the conduit is constructed and arranged to absorb heat from the microprocessor circuit and to dissipate at least a portion of the heat away from the microprocessor circuit. 18. The semiconductor die of claim 17, wherein the conduit is substantially filled with the heat-dissipating material. 19. The semiconductor die of claim 18, wherein the heat-dissipating material comprises a thermally conductive material. 20. The semiconductor die of claim 19, wherein the thermally conductive material comprises copper. 21. The semiconductor die of claim 19, wherein the thermally conductive material comprises silver. 22. The semiconductor die of claim 17, wherein the conduit is cylindrical. 23. The semiconductor die of claim 17, wherein the conduit includes a hole. 24. The semiconductor die of claim 17, wherein the conduit includes a channel. 25. The semiconductor die of claim 17, wherein the conduit includes a via. 26. The semiconductor die of claim 17, wherein the conduit includes a slot. 27. The semiconductor die of claim 17, the first portion of the conduit being proximate to a floating point unit in the microprocessor circuit.
연구과제 타임라인
LOADING...
LOADING...
LOADING...
LOADING...
LOADING...
이 특허에 인용된 특허 (8)
Conte Alfred S. (Hollister CA), Cooling multi-chip modules using embedded heat pipes.
Tanzer Herbert J. (Topanga CA) Goodarzi Gholam A. (Torrance CA) Olaveson Richard J. (Inglewood CA), Integral extended surface cooling of power modules.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.