초록 ▼

A plurality of metal wire layers consisting of a first metal wire layer and a second metal wire layer are formed on a semiconductor substrate. A fluorinated silicate glass film serving as an interlayer metal dielectric film is formed between the first and second metal wire layers. A silicon nitride

A plurality of metal wire layers consisting of a first metal wire layer and a second metal wire layer are formed on a semiconductor substrate. A fluorinated silicate glass film serving as an interlayer metal dielectric film is formed between the first and second metal wire layers. A silicon nitride film serving as a protective insulation film is formed on the fluorinated silicate glass film layer. An adhesive layer made of, for example, a P--SiO film, P--SiON film, or PE-SiO film, is formed between the fluorinated silicate glass film and the silicon nitride film.

대표청구항 ▼

What is claimed is: 1. A semiconductor device comprising: a semiconductor substrate; a plurality of metal wire layers formed on said semiconductor substrate, comprising a highest metal wire layer and a plurality of lower metal wire layers underlying said highest metal wire layer; a plurality of flu

What is claimed is: 1. A semiconductor device comprising: a semiconductor substrate; a plurality of metal wire layers formed on said semiconductor substrate, comprising a highest metal wire layer and a plurality of lower metal wire layers underlying said highest metal wire layer; a plurality of fluorinated silicate glass films formed respectively between said plurality of lower metal wire layers, and said plurality of fluorinated silicate glass films acting as an interlayer metal dielectric film; a silicon nitride film formed on the highest fluorinated silicate glass film of said plurality of fluorinated silicate glass films, and said silicon nitride film acting as a protective insulation film; and an adhesive layer formed overlying and in contact with said highest metal wire layer, and between said highest fluorinated silicate glass film and said silicon nitride film. 2. The semiconductor device according to claim 1, wherein at least one of the upper surface of said highest fluorinated silicate glass film and the upper surface of said adhesive layer is an interfacially-treated surface formed by interfacial treatment. 3. The semiconductor device according to claim 1, wherein said adhesive layer is a P--SiO film or P--SiON film. 4. The semiconductor device according to claim 3, wherein said adhesive layer has a thickness of 10 to 1000 nm. 5. The semiconductor device according to claim 1, wherein said adhesive layer is a PE-SiO film. 6. The semiconductor device according to claim 5, wherein said adhesive layer has a thickness of 50 to 2000 nm. 7. The semiconductor device according to claim 1, wherein the highest metal wire layer is formed on the highest fluorinated silicate glass film, and said adhesive layer is formed on said highest fluorinated silicate glass film.