초록 ▼

A method of fabrication of a semiconductor integrated circuit device, calls for disposing, in an ultrapure water preparing system, UF equipment having therein a UF module which has been manufactured by disposing, in a body thereof, a plurality of capillary hollow fiber membranes composed of a polysu

A method of fabrication of a semiconductor integrated circuit device, calls for disposing, in an ultrapure water preparing system, UF equipment having therein a UF module which has been manufactured by disposing, in a body thereof, a plurality of capillary hollow fiber membranes composed of a polysulfone membrane or polyimide membrane, bonding the plurality of hollow fiber membranes at end portions thereof by hot welding, and by this hot welding, simultaneously adhering the hollow fiber membranes to the body. Upon preparation of ultrapure water to be used for the fabrication of the semiconductor integrated circuit device, it is possible to prevent run-off of ionized amine into the ultrapure water.

대표청구항 ▼

What is claimed is: 1. A method of fabrication of a semiconductor integrated circuit device, comprising the steps of: (a) introducing water into a primary pure water purifying system as first raw material water; (b) introducing, as second raw material water, primary pure water which has been obtain

What is claimed is: 1. A method of fabrication of a semiconductor integrated circuit device, comprising the steps of: (a) introducing water into a primary pure water purifying system as first raw material water; (b) introducing, as second raw material water, primary pure water which has been obtained by the purification of said first raw material water through use of said primary pure water purifying system, into a secondary pure water purifying system having a secondary pure water circulating loop; and (c) feeding a first wet treatment apparatus with secondary pure water which has been obtained by the purification of said second raw material water through use of said secondary pure water purifying system, thereby subjecting a semiconductor integrated circuit wafer to first wet treatment in the first wet treatment apparatus, step (c) including the sub-steps of: (c1) removing ions from the second raw material water through use of a cation removing filter disposed between a secondary pure water supply point from the secondary pure water circulating loop and a use point in the first wet treatment apparatus, the cation removing filter having a membrane sheet; and (c2) feeding the use point of said first wet treatment apparatus with the secondary pure water which has passed through said cation removing filter. 2. A fabrication method according to claim 1, wherein an ultrafiltration filter is disposed in said secondary pure water circulating loop before the supply point. 3. A fabrication method according to claim 2, wherein said ultrafiltration filter is a heat-welded type. 4. A fabrication method according to claim 2, wherein said first wet treatment is a cleaning treatment. 5. A fabrication method according to claim 4, wherein said semiconductor integrated circuit device comprises a flash memory portion. 6. A fabrication method according to claim 5, wherein said semiconductor integrated circuit device has an MISFET whose gate insulating film or a tunnel oxide film has a thickness, in terms of a silicon oxide film, of 20 nm or less. 7. A fabrication method according to claim 5, wherein said semiconductor integrated circuit device has an MISFET whose gate insulating film or a tunnel oxide film has a thickness, in terms of a silicon oxide film, of 10 nm or less. 8. A fabrication method according to claim 5, wherein said semiconductor integrated circuit device has an MISFET whose gate insulating film or tunnel oxide film has a thickness, in terms of a silicon oxide film, of 5 nm or less. 9. A fabrication method according to claim 4, wherein said semiconductor integrated circuit device has an MISFET whose gate insulating film or a tunnel oxide film has a thickness, in terms of a silicon oxide film, of 5 nm or less. 10. A fabrication method according to claim 1, wherein said cation removing filter is capable of removing ionized amine. 11. A fabrication method according to claim 1, wherein said wet treatment is a rinsing treatment. 12. A fabrication method according to claim 1, wherein said secondary pure water purifying system includes an ultra filter, the cation removing filter being disposed between the ultra filter and the use point such that said ions are removed from the second raw material water through use of said cation removing filter downstream of the ultra filter. 13. A method of wet treating a semiconductor integrated circuit device, forming part of a method of fabrication of said semiconductor integrated circuit device, comprising: (a) introducing water into a primary pure water purifying system as first raw material water; (b) introducing, as second raw material water, primary pure water which has been obtained by the purification of said first raw material water through use of said primary pure water purifying system, into a secondary pure water purifying system having a secondary pure water circulating loop; and (c) feeding a first wet treatment apparatus with secondary pure water which has been obtained by the purification of said second raw material water through use of said secondary pure water purifying system, thereby subjecting a semiconductor integrated circuit wafer to first wet treatment in the first wet treatment apparatus, step (c) including the sub-steps of: (c1) removing ions from the second raw material water through use of a cation removing filter disposed between a secondary pure water supply point from the secondary pure water circulating loop and a use point in the first wet treatment apparatus, the cation removing filter having a membrane sheet; and (c2) feeding the use point of said first wet treatment apparatus with the secondary pure water which has passed through said cation removing filter. 14. The wet-treating method according to claim 13, wherein said wet-treating method is a method of cleaning the semiconductor integrated circuit device. 15. The wet-treating method according to claim 13, wherein said wet-treating method is a method of rinsing the semiconductor integrated circuit device. 16. The wet-treating method according to claim 13, wherein said cation removing filter is capable of removing ionized amine. 17. The wet-treating method according to claim 13, wherein said secondary pure water purifying system includes an ultra filter, the cation removing filter being disposed between the ultra filter and the use point such that said ions are removed from the second raw material water through use of said cation removing filter downstream of the ultra filter. 18. A method of fabrication of a semiconductor integrated circuit device, comprising the steps of: (a) introducing first water into a first water purifying system, and sending out first purified water from the first water purifying system; (b) introducing the first purified water into a second water purifying system having a pure water circulating loop, and sending out second purified water from a first supply point on the pure water circulating loop; and (c) feeding a first wet treatment apparatus with the second purified water, thereby carrying out first wet treatment to a wafer in the first wet treatment apparatus, step (c) including the sub-steps of: (c1) removing ions from the second purified water through use of an ion removing filter at least capable of removing cations disposed between the first supply point and a use point in the first wet treatment apparatus, the cation removing filter having a membrane sheet; and (c2) feeding the use point with the second purified water which has passed through said ion removing filter 19. A fabrication method according to claim 18, wherein an ultrafiltration filter is disposed in said pure water circulating loop before the first supply point. 20. A fabrication method according to claim 19, wherein said ultrafiltration filter is a heat-welded type. 21. A fabrication method according to claim 19, wherein said first wet treatment is a cleaning treatment. 22. A fabrication method according to claim 21, wherein said semiconductor integrated circuit device comprises a flash memory portion. 23. A fabrication method according to claim 22, wherein said semiconductor integrated circuit device has an MISFET whose gate insulating film or a tunnel oxide film has a thickness, in terms of a silicon oxide film, of 20 nm or less. 24. A fabrication method according to claim 22, wherein said semiconductor integrated circuit device has an MISFET whose gate insulating film or a tunnel oxide film has a thickness, in terms of a silicon oxide film, of 10 nm or less. 25. A fabrication method according to claim 22, wherein said semiconductor integrated circuit device has an MISFET whose gate insulating film or tunnel oxide film has a thickness, in terms of a silicon oxide film, of 5 nm or less. 26. A fabrication method according to claim 21, wherein said semiconductor integrated circuit device has an MISFET whose gate insulating film or a tunnel oxide film has a thickness, in terms of a silicon oxide film, of 5 nm or less. 27. A fabrication method according to claim 18, wherein said ion removing filter is capable of removing ionized amine. 28. A fabrication method according to claim 18, wherein said wet treatment is a rinsing treatment.