초록 ▼

This invention is to improve the reproducibility and yield in separating a bonded substrate stack. A bonded substrate stack having a porous layer inside is held by substrate holding portions 105 and 106, and a fluid is injected from a nozzle to the porous layer of the bonded substrate stack, thereby

This invention is to improve the reproducibility and yield in separating a bonded substrate stack. A bonded substrate stack having a porous layer inside is held by substrate holding portions 105 and 106, and a fluid is injected from a nozzle to the porous layer of the bonded substrate stack, thereby separating the bonded substrate stack at the porous layer. The variation in pressure of the fluid is suppressed within a predetermined range by a servo-driven pump.

대표청구항 ▼

What is claimed is: 1. A separating method of separating a sample by a fluid, wherein a sample having a fragile separation layer inside is separated at the separation layer while injecting a fluid whose variation in pressure is suppressed within a predetermined range to the separation layer of the

What is claimed is: 1. A separating method of separating a sample by a fluid, wherein a sample having a fragile separation layer inside is separated at the separation layer while injecting a fluid whose variation in pressure is suppressed within a predetermined range to the separation layer of the sample. 2. The method according to claim 1, wherein the predetermined range is 짹10% of a target pressure. 3. The method according to claim 1, wherein the pressure of the fluid is servo-controlled. 4. The method according to claim 1, wherein the sample is separated while being rotated about an axis perpendicular to the separation layer. 5. The method according to claim 1, wherein the sample is separated while changing a position where the fluid is injected to the sample along with progress of separation processing. 6. The method according to claim 1, wherein the sample is separated while changing the position where the fluid is injected to the separation layer of the sample gradually or stepwise from a peripheral portion to a central portion of the separation layer along with progress of the separation processing. 7. The method according to claim 1, wherein the sample has, outside the separation layer, a concave portion recessed from a side surface. 8. The method according to claim 1, wherein the separation layer is a layer formed by anodization. 9. The method according to claim 1, wherein the separation layer is a layer formed by ion implantation. 10. A transfer method of transferring a transfer layer on a surface of a first member to a second member, comprising: the preparation step of preparing a composite member by bringing the first member having a separation layer inside and the transfer layer on the separation layer into tight contact with the second member; and the step of separating the composite member at the separation layer while injecting a fluid, maintained at substantially constant pressure by suppressing variation in the pressure within a predetermined range, to the separation layer of the composite member, thereby transferring the transfer layer of the first member to the second member. 11. A substrate manufacturing method comprising: the preparation step of preparing a bonded substrate stack by bonding a first substrate having a separation layer inside and a transfer layer on the separation layer to a second substrate; and the separation step of separating the bonded substrate stack at the separation layer while injecting a fluid, maintained at substantially constant pressure by suppressing variation in the pressure within a predetermined range, to the separation layer of the bonded substrate stack. 12. The method according to claim 11, wherein the predetermined range is 짹10% of a target pressure. 13. The method according to claim 11, wherein in the separation step, the pressure of the fluid is servo-controlled. 14. The method according to claim 11, wherein in the separation step, the bonded substrate stack is separated while being rotated about an axis perpendicular to the separation layer. 15. The method according to claim 11, wherein in the separation step, the bonded substrate stack is separated while changing a position where the fluid is injected to the bonded substrate stack along with progress of separation processing. 16. The method according to claim 11, wherein in the separation step, the bonded substrate stack is separated while changing the position where the fluid is injected to the separation layer of the bonded substrate stack gradually or stepwise from a peripheral portion to a central portion of the separation layer along with progress of the separation processing. 17. The method according to claim 11, wherein the separation layer is a fragile layer. 18. The method according to claim 11, wherein the separation layer is a layer formed by anodization. 19. The method according to claim 11, wherein the separation layer is a layer formed by ion implantation. 20. The method according to claim 11, wherein the transfer layer includes a single-crystal Si layer. 21. The method according to claim 20, wherein the transfer layer has, in addition to the single-crystal Si layer, an insulating layer on the single-crystal Si layer. 22. A semiconductor device manufacturing method comprising: the step of preparing an SOI substrate using the substrate manufacturing method of claim 11; and the step of element-isolating an SOI layer of the SOI substrate and forming a transistor on the element-isolated SOI layer. 23. The method according to claim 22, wherein the transistor is a partial depletion type FET. 24. The method according to claim 22, wherein the transistor is a complete depletion type FET.