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An apparatus and method for treating surfaces of semiconductor wafers with a reactive gas, such as ozone, utilizes streams of gaseous material ejected from a gas nozzle structure to create depressions on or holes through a boundary layer of processing fluid formed on a semiconductor wafer surface to

An apparatus and method for treating surfaces of semiconductor wafers with a reactive gas, such as ozone, utilizes streams of gaseous material ejected from a gas nozzle structure to create depressions on or holes through a boundary layer of processing fluid formed on a semiconductor wafer surface to increase the amount of reactive gas that reaches the wafer surface through the boundary layer. The apparatus and method may be used to clean a semiconductor wafer surface and/or grow an oxide layer on the wafer surface by oxidation.

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What is claimed is: 1. A method for treating a surface of an object with a reactive gas comprising: forming a processing fluid layer on said surface of said object; and ejecting at least one stream of reactive gas onto said processing fluid layer on said surface of said object to create a hole in s

What is claimed is: 1. A method for treating a surface of an object with a reactive gas comprising: forming a processing fluid layer on said surface of said object; and ejecting at least one stream of reactive gas onto said processing fluid layer on said surface of said object to create a hole in said processing fluid layer so that stream of reactive gas directly contacts and reacts with said surface of said object, said reactive gas consisting of ozone gas. 2. The method of claim 1 further comprising forming a layer of reacted material on said surface of said object using said reactive gas. 3. The method of claim 2 wherein said forming of said layer of reacted material includes forming an oxide layer on said surface of said object using said reactive gas. 4. The method of claim 3 further comprising forming a layer of silicon-based material on said object such that said surface of said object includes said layer of silicon-based material, said oxide layer being formed over said layer of silicon-based material. 5. The method of claim 3 further comprising forming patterned structures on said object such that said surface of said object includes said patterned structures, said oxide layer being formed over said patterned structures. 6. The method of claim 3 further comprising forming an electrode region of a transistor in said object, said oxide layer being formed over said electrode region. 7. The method of claim 1 wherein said ejecting of said at least one stream of reactive gas includes ejecting a wall-like stream of said reactive gas onto said processing fluid layer on said surface of said object. 8. The method of claim 1 further comprising ejecting at least one stream of inert gas onto said processing fluid layer on said surface of said object. 9. The method of claim 8 wherein said at least one stream of inert gas is ejected at a higher pressure than said at least one stream of reactive gas. 10. The method of claim 1 wherein said forming of said processing fluid layer includes dispensing a processing fluid onto said surface of said object to form said processing fluid layer. 11. The method of claim 10 wherein said dispensing of said processing fluid includes dispensing said processing fluid in the form of a spray onto said surface of said object. 12. The method of claim 10 wherein said dispensing of said processing fluid includes dispensing said processing fluid in the form of a fog onto said surface of said object. 13. The method of claim 12 wherein said dispensing of said processing fluid includes generating said fog using sonic energy. 14. The method of claim 10 wherein said dispensing of said processing fluid includes passing said processing fluid through spaces of a gas nozzle structure, said gas nozzle structure being configured to eject said at least one stream of reactive gas onto said processing fluid layer. 15. The method of claim 1 wherein said ejecting of said at least one stream of reactive gas includes ejecting multiple streams of reactive gas from a plurality of openings of a gas nozzle structure. 16. The method of claim 15 wherein said gas nozzle structure is shaped in a bar-like configuration, and wherein said ejecting of said multiple streams of reactive gas from said plurality of openings of said gas nozzle structure includes ejecting said multiple streams of reactive gas onto an area of said processing fluid layer that corresponds to said bar-like configuration of said gas nozzle structure. 17. The method of claim 15 wherein said gas nozzle structure includes a grid-like portion with a plurality of spaces, said spaces of said grid-like portion allowing said processing fluid dispensed to pass through said gas nozzle structure. 18. The method of claim 15 wherein said gas nozzle structure is shaped in a triangular configuration. 19. A method for treating a surface of an object with a reactive gas comprising: forming a processing fluid layer on said surface of said object; and ejecting multiple streams of gaseous material onto said processing fluid layer on said surface of said object such that multiple holes are formed in said processing fluid layer, including introducing said reactive gas through said multiple holes to allow said reactive gas to direct contact and react with said surface of said object, said reactive gas consisting of ozone gas. 20. The method of claim 19 wherein said ejecting of said multiple streams of gaseous material includes controlling pressure of said multiple streams of gaseous material. 21. The method of claim 19 wherein said gaseous material includes said reactive gas. 22. The method of claim 19 wherein said introducing of said reactive gas includes forming a layer of reacted material on said surface of said object. 23. The method of claim 22 wherein said forming of said layer of reacted material includes forming an oxide layer on said surface of said object. 24. The method of claim 23 further comprising forming a layer of silicon-based material on said object such that said surface at said object includes said layer of silicon-based material, said oxide layer being formed over said layer of silicon-based material. 25. The method of claim 23 further comprising forming patterned structures on said object such that said surface of said object includes said patterned structures, said oxide layer being formed over said patterned structures. 26. The method of claim 23 further comprising forming an electrode region of a transistor in said object, said oxide layer being formed over said electrode region. 27. The method of claim 19 wherein said ejecting of said multiple streams of gaseous material includes ejecting a wall-like stream of gaseous material onto said processing fluid layer. 28. The method of claim 19 wherein said ejecting of said multiple streams of gaseous material includes ejecting at least one stream of inert gas and at least one stream of reactive gas. 29. The method of claim 28 wherein said at least one stream of inert gas is ejected at a higher pressure than said at least one stream of reactive gas. 30. The method of claim 19 wherein said forming of said processing fluid layer includes dispensing a processing fluid onto said surface of said object to form said processing fluid layer. 31. The method of claim 30 wherein said dispensing of said processing fluid includes dispensing said processing fluid in the form of a spray onto said surface of said object. 32. The method of claim 30 wherein said dispensing of said processing fluid includes dispensing said processing fluid in the form of a fog onto said surface of said object. 33. The method of claim 32 wherein said dispensing of said processing fluid includes generating said fog using sonic energy. 34. The method of claim 30 wherein said dispensing of said processing fluid includes passing said processing fluid through spaces of a gas nozzle structure, said gas nozzle structure being configured to eject said multiple streams of gaseous material onto said processing fluid layer. 35. The method of claim 19 wherein said ejecting of said multiple streams of gaseous material includes ejecting said multiple streams of gaseous material from a plurality of openings of a gas nozzle structure. 36. The method of claim 35 wherein said gas nozzle structure is shaped in a bar-like configuration, and wherein said ejecting of said multiple streams of gaseous material from said plurality of openings of said gas nozzle structure includes ejecting said multiple streams of gaseous material onto an area of said fluid layer that corresponds to said bar-like configuration of said gas nozzle structure. 37. The method of claim 35 wherein said gas nozzle structure includes a grid-like portion wit a plurality of spaces, said spaces of said grid-like portion allowing said processing fluid dispensed to pass through said gas nozzle structure. 38. The method of claim 35 wherein said gas nozzle structure is shaped in a triangular configuration. 39. A method for treating a surface of an object with a reactive gas comprising: forming a processing fluid layer on said surface of said object; ejecting at least one stream of inert gas onto said processing fluid layer on said surface of said object to create a hole in said processing fluid layer; and ejecting at least one stream of reactive gas into said holes to allow said reactive gas to directly contact and react with said surface of said object. 40. The method of claim 39 wherein said at least one stream of inert gas is ejected at a higher pressure than said at least one stream of reactive gas. 41. The method of claim 39 wherein said ejecting of said at least one stream of inert gas includes controlling pressure of said at least one stream of inert gas. 42. The method of claim 39 further comprising forming a layer of reacted material on said surface of said object using said reactive gas. 43. The method of claim 42 wherein said reactive gas includes ozone, and wherein said forming of said layer of reacted material includes forming an oxide layer on said surface of said object using said reactive gas. 44. The method of claim 43 further comprising forming a layer of silicon-based material on said object such that said surface of said object includes said layer of silicon-based material, said oxide layer being formed over said layer of silicon-based material. 45. The method of claim 39 wherein said ejecting of said at least one stream of inert gas includes ejecting a wall-like stream of inert gas onto said fluid layer on said surface of said object. 46. The method of claim 39 wherein said ejecting of said at least one stream of reactive gas includes ejecting a wall-like stream of reactive gas onto said fluid layer on said surface of said object. 47. The method of claim 39 wherein said forming of said processing fluid layer includes dispensing a processing fluid onto said surface of said object to form said processing fluid layer. 48. The method of claim 47 wherein said dispensing of said processing fluid includes dispensing said processing fluid in the form of a spray onto said surface of said object. 49. The method of claim 47 wherein said dispensing of said processing fluid includes passing said processing fluid trough spaces of a gas nozzle structure, said gas nozzle structure being configured to eject said at least one stream of reactive gas onto said processing fluid layer. 50. The method of claim 39 wherein said ejecting of said at least one stream of reactive gas includes ejecting multiple streams of reactive gas from a plurality of openings of a gas nozzle structure. 51. A method for treating a surface of an object with a reactive gas comprising: forming a processing fluid layer on said surface of said object; and ejecting at least one stream of reactive gas onto said processing fluid layer on said surface of said object to create a hole in said processing fluid layer so that said reactive gas directly contacts and reacts with said surface of said object, said reactive gas consisting of ozone gas and at least one other gas selected from a group consisting of nitrogen gas, HF vaporized gas and IPA vaporized gas. 52. The method of claim 51 further comprising forming a layer of reacted material on said surface of said object using said reactive gas. 53. The method of claim 52 wherein said forming of said layer of reacted material includes forming an oxide layer on said surface of said object using said reactive gas. 54. The method of claim 51 wherein said ejecting of said at least one stream of reactive gas includes ejecting a wall-like stream of said reactive gas said processing fluid layer on said surface of said object. 55. The method of claim 51 further comprising ejecting at least one stream of inert gas onto said processing fluid layer on said surface of said object. 56. The method of claim 55 wherein said at least one stream of inert gas is ejected at a higher pressure than said at least one stream of reactive gas. 57. The method of claim 51 wherein said ejecting of said at least one stream of reactive gas includes controlling pressure of said at least one stream of reactive gas.