Catalyst attached to solid and used to promote free radical formation in CMP formulations
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
C09G-001/02
C09G-001/00
C09G-001/04
B24B-001/00
출원번호
US-0361822
(2003-02-11)
발명자
/ 주소
Scott,Brandon Shane
Small,Robert J.
출원인 / 주소
DuPont Air Products NanoMaterials L.L.C.
대리인 / 주소
Morgan, Lewis &
인용정보
피인용 횟수 :
26인용 특허 :
8
초록▼
The present invention provides a composition for chemical-mechanical polishing which comprises at least one abrasive particle having a surface at least partially coated by a activator. The activator comprises a metal other than a metal of Group 4(b), Group 5(b) or Group 6(b). The composition further
The present invention provides a composition for chemical-mechanical polishing which comprises at least one abrasive particle having a surface at least partially coated by a activator. The activator comprises a metal other than a metal of Group 4(b), Group 5(b) or Group 6(b). The composition further comprises at least one oxidizing agent. The composition is believed to be effective by virtue of the interaction between the activator coated on the surface of the abrasive particles and the oxidizing agent, at the activator surface, to form free radicals. The invention further provides a method that employs the composition in the polishing of a feature or layer, such as a metal film, on a substrate surface. The invention additionally provides a substrate produced this method.
대표청구항▼
What is claimed is: 1. A composition for chemical-mechanical polishing a semiconductor or memory device substrate, comprising: a fluid comprising at least one compound that produces free radicals when contacted with an activator, wherein the fluid pH is between about 1 to about 11; and a plurality
What is claimed is: 1. A composition for chemical-mechanical polishing a semiconductor or memory device substrate, comprising: a fluid comprising at least one compound that produces free radicals when contacted with an activator, wherein the fluid pH is between about 1 to about 11; and a plurality of particles having a surface and having at least one activator associated with the surface, wherein the at least one activator comprises iron, copper, silver, or combinations thereof, and wherein the activator reacts with the compound to form the free radicals; wherein the composition when used in a chemical mechanical polishing process will remove desired metal but will not create defects or nonuniformity such that the substrate can not undergo further fabrication to become a finished operable semiconductor or memory device. 2. A composition for chemical-mechanical polishing a semiconductor or memory device substrate, comprising: a fluid comprising at least one compound that produces free radicals when contacted with at least one activator, wherein the fluid comprises less than about 500 ppm of dissolved metal ions having multiple oxidation states and the fluid pH is between about 1 to about 11; and a plurality of particles having a surface in contact with the fluid and having at least one activator associated with the surface, wherein the activator associated with the surface is a dissociable salt of a metal and is present in an amount between 5 to 10000 ppm by weight of the composition, and wherein the at least one compound when contacted with at least one activator produces free radicals; wherein the composition when used in a chemical mechanical polishing process will remove desired material but will not create defects or nonuniformity such that the substrate can not undergo further fabrication to become a finished operable semiconductor or memory device. 3. A composition for chemical-mechanical polishing a semiconductor or memory device substrate, comprising: a fluid comprising at least one oxidizer that produces reactive oxygen-containing free radicals when contacted by an activator; and a plurality of particles having a surface and having at least one activator comprising an ion of at least one of iron, copper, manganese, cobalt, cerium, and nickel associated with the surface, wherein the activator(s) associated with the surface is/are present in a total amount ranging from about 5 ppm to about 4000 ppm by weight in the composition, wherein the composition when used in a chemical mechanical polishing process will remove the desired material but will not create defects or nonuniformity such that the substrate can not undergo further fabrication to become a finished operable semiconductor or memory device. 4. The composition of claim 3 wherein the at least one oxidizer comprises a per-compound present in the composition in an amount from about 0.01% to about 30% by weight. 5. The composition of claim 4 wherein the per-compound comprises at least one peroxide. 6. The composition of claim 5 wherein the per-compound comprises hydrogen peroxide and is present in the composition in an amount from about 0.0 % to about 10% by weight. 7. The composition of claim 4 wherein the per compound comprises peracetic acid and is present in the composition in an amount from about 0.0 1% to about 10% by weight. 8. The composition of claim 4 wherein the per-compound comprises at least one persulfate. 9. The composition of claim 4 wherein the per-compound comprises at least one perphosphate. 10. The composition of claim 4 wherein the per-compound comprises at least one periodate. 11. The composition of claim 3 wherein the at least one oxidizer comprises at least one hydroxylamine compound present in the composition is from about 0.01% to about 30% by weight. 12. The composition of claim 3 wherein the oxidizer that produces free radicals comprises at least two of a peroxide, a persulfate, a perphosphate, a periodate, perodic acid, ozone, and a hydroxylamine compound, and the total amount present in the composition is from about 0. 0 1% to about 30% by weight, and wherein the activator comprises cerium, iron, copper, or mixture thereof, and wherein the fluid contain less than about 100 ppm of dissolved metals having multiple oxidation states. 13. The composition of claim 1 wherein the at least one compound comprises ozone. 14. The composition of claim 3 wherein the activator is an ion of iron present in a total amount ranging from about 5 ppm to about 200 ppm by weight in the composition. 15. The composition of claim 1 wherein the plurality of particles having a surface and having at least one activator associated with the surface comprises a metal oxide abrasive. 16. The composition of claim 15, wherein the metal oxide comprises alumina, silica, ceria, or mixtures thereof, and wherein the activator(s) associated with the surface is/are present in a total amount ranging from about 10 ppm to about 1,000 ppm by weight in the composition. 17. The composition of claim 1 wherein the plurality of particles having a surface and having at least one activator associated with the surface comprises a ceramic particle having an average particle size from about 0.001 to about 1 micron, wherein the ceramic particle comprises at least one metallic compound selected from the group consisting of zinc oxide, bismuth oxide, a metallic sulfide, a metallic titanate, a metallic tantalate, a metallic zirconate, a metallic silicate, a metallic germanium oxide, a metallic niobate, a metallic boride, a metallic nitride, a metallic carbide, a metallic telluride, a metallic arsenide, a metallic silicide, a metallic selenide, and mixtures or combinations thereof. 18. The composition of claim 1 wherein the plurality of particles having a surface and having at least one activator associated with the surface comprises alumina. 19. The composition of claim 18, wherein the particles have a BET surface area between about 5 and 430 m2/g and the weight average particle size is less than about 0.4 microns. 20. The composition of claim 18, wherein the particles have a average particle size from about 0.001 to about 0.2 microns. 21. The composition of claim 3 wherein the plurality of particles having a surface and having at least one activator associated with the surface comprises silica. 22. The composition of claim 21, wherein the particles have a BET surface area between about 5 and 1000 m2/g, an average particle size less than about 1 micron, and a particle size distribution such that at least about 95% by weight of the silica particles have a particle size within about 30% of the weight average particle size. 23. The composition of claim 21, wherein the particles have a average particle size from about 0.002 to about 0.6 microns. 24. The composition of claim 3 wherein the plurality of particles having a surface and having at least one activator associated with the surface comprises fumed silica aggregates. 25. The composition of claim 1 wherein the plurality of particles having a surface and having at least one activator associated with the surface comprises ceria. 26. The composition of claim 1 wherein the plurality of particles comprises germania, spinel, titania, an oxide of tungsten, a nitride of tungsten, zirconia, an oxide of vanadium, or a combination thereof. 27. The composition of claim 1 wherein the plurality of particles having a surface and having at least one activator associated with the surface comprises polymeric particles. 28. The composition of claim 27, wherein the polymeric particles are a composite particle further comprising a metal oxide. 29. The composition of claim 1 wherein the composition further comprises at least one second particle different from the plurality of particles having a surface and having at least one activator associated with the surface. 30. The composition of claim 29, wherein the at least one second particle is an abrasive that has no activator associated with its surface. 31. The composition of claim 1 wherein the at least one compound comprises a first oxidizer, and wherein the composition further comprises a second oxidizer. 32. The composition of claim 1 wherein the composition further comprises at least one stabilizer in an amount sufficient to stabilize the composition. 33. The composition of claim 1 wherein the composition further comprises at least one promoter in an amount between 10 ppm and 5000 ppm. 34. The composition of claim 1 wherein the composition further comprises at least one chelator. 35. The composition of claim 1 wherein the composition further comprises at least one soluble activator. 36. The composition of claim 35, wherein the soluble activator is iodine. 37. The composition of claim 1 wherein the composition further comprises at least one anti-corrosion agent, at least one dispersability agent, or both. 38. The composition of claim 1 wherein the composition further comprises at least one pH adjuster, and wherein the fluid pH is between about 2 to about 8. 39. The composition of claim 38, wherein the pH is between about 3 to about 7. 40. The composition of claim 3, wherein the pH is between about 3.5 to about 4.5. 41. The composition of claim 1 wherein the composition further comprises a polishing enhancement agent different from the at least one compound. 42. The composition of claim 1 wherein the composition further comprises a glycol, glycine, a derivative of glycine, or mixture thereof. 43. The composition of claim 1 wherein the plurality of particles having a surface and having at least one activator associated with the surface comprises a metal oxide particle comprising silica, alumina, ceria, or mixtures or combinations thereof, and wherein the metal oxide particles a particle size distribution such that the one-sigma deviation is no more than about 20% of the average particle size, and wherein the activator comprises copper oxide, iron oxide, or mixture thereof. 44. The composition of claim 3 wherein the plurality of particles having a surface and having at least one activator associated with the surface comprises a metal oxide, a polymer, or both, and wherein the activator associated with the surface comprises a dissociable cerium salt. 45. The composition of claim 1 wherein the plurality of particles having a surface and having at least one activator associated with the surface comprises a metal oxide, a polymer, or both, and wherein the activator associated with the surface comprises a dissociable copper salt. 46. The composition of claim 1 wherein the plurality of particles having a surface and having at least one activator associated with the surface comprises a metal oxide, a polymer, or both, and wherein the activator associated with the surface comprises a dissociable iron salt. 47. The composition of claim 3 wherein the plurality of particles having a surface and having at least one activator associated with the surface comprises a metal oxide, a polymer, or both, and wherein the activator associated with the surface comprises a dissociable manganese salt, a dissociable cobalt salt, a dissociable nickel salt, or mixture thereof. 48. The composition of claim 1 wherein the plurality of particles having a surface and having at least one activator associated with the surface comprises a metal oxide that has been doped with a metal selected from iron or copper. 49. The composition of claim 3 wherein the particles comprise inner surface associated with porosity and also comprise an outer surface, and wherein said activator is associated on from about 5 to about 80 percent of the outer surface of the plurality of particles having a surface and having at least one activator associated with the surface. 50. The composition of claim 49, wherein the activator is associated on from about 25 to about 50 percent of the outer surface of the plurality of particles having a surface and having at least one activator associated with the surface. 51. The composition of claim 1 wherein the amount of activator associated with the surface is from about 0.01% to about 3% by weight of the plurality of particles having at least one activator. 52. The composition of claim 3 wherein the fluid comprises less than about 10 ppm of dissolved metal ions having multiple oxidation states. 53. The composition of claim 52, wherein the fluid comprises less than about 2 ppm of dissolved metal ions having multiple oxidation states. 54. The composition of claim 1 wherein the plurality of particles having a surface and having at least one activator associated with the surface comprises silica, alumina, ceria, or mixtures thereof, wherein the at least one activator associated with the surface comprises iron, wherein the amount of activator iron is from about 0.0 1% to about 3% by weight of the plurality of particles. 55. The composition of claim 54, wherein the fluid comprises less than about 10 ppm of dissolved iron. 56. The composition of claim 3 wherein the plurality of particles having a surface and having at least one activator associated with the surface comprises silica, alumina, ceria, or mixtures thereof, wherein the at least one activator associated with the surface comprises cerium, wherein the amount of activator cerium is from about 0.0 1% t about 3% by weight of the plurality of particles. 57. A composition for chemical-mechanical polishing a semiconductor or memory disk substrate, comprising: a fluid comprising at least one compound that produces free radicals when contacted by an activator; and an activator in the fluid in an amount sufficient to increase the removal rate of tungsten 10% over the removal rate of the composition without the activator, wherein the activator is selected from: iodine; a cerium salt; or a metalglycine complex, wherein the metal consists essentially of cerium, iron, manganese, cobalt, or mixture thereof; such that the semiconductor or memory disk substrate is undamaged so the substrate can undergo further fabrication steps. 58. The composition of claim 57, wherein the activator comprises iodine and the compound that produces free radicals is a per compound. 59. The composition of claim 57, wherein the activator comprises cerium in an amount between about 10 ppm and about 1000 ppm. 60. The composition of claim 57, wherein the activator comprises a metal-glycine complex, wherein the metal consists essentially of cerium, iron, manganese, cobalt, or mixture thereof, and wherein the free radical is a hydroxide radical. 61. A method of polishing a substrate surface having at least one feature thereon comprising a metal, which method comprises: providing the composition of claim 1; and chemically-mechanically polishing the feature by contacting the feature with the composition, wherein performing the polishing process will not create defects or nonuniformity such that the substrate can not undergo further fabrication to become a finished operable product. 62. The method of claim 61, wherein the plurality of abrasive articles having a surface in contact with the fluid and having at least one activator associated wit the surface comprises an abrasive present in the composition in an amount from about 0.0 10/ to about 20% by weight, and wherein the at least one compound that produces free radicals comprises at least one oxidizer that produces free radicals present in the composition in an amount between about 0.0 1% to about 30%. 63. The method of claim 62, wherein substrate is a semiconductor, the metal feature comprises aluminum, copper, titanium, tungsten, tantalum, any alloy thereof, any metal nitride thereof, any metal silicon alloy thereof, and any combination thereof. 64. The method of claim 63, wherein the feature is adjacent a material selected from the group consisting of tantalum, tantalum nitride, titanium, titanium nitride, titanium tungsten, tungsten, and any combination thereof, and wherein the metal feature material is different from the material adjacent to it. 65. The method of claim 63, wherein said method is sufficient to provide a chemically-mechanically polished substrate surface having a within-wafer nonuniformity from about zero to about 12 percent. 66. The method of claim 63, wherein said method is sufficient to provide a chemically-mechanically polished semiconductor substrate surface wherein any microscratch thereon produced during the chemical-mechanical polishing is less than about 20 Angstroms in depth. 67. The method of claim 62, wherein substrate is a memory device, the metal feature comprises aluminum, copper, titanium, tungsten, tantalum, nickel, nickel-iron, or any alloy thereof, Sendust, and Cadmium-Zinc-Telluride, and any combination thereof. 68. The method of claim 67, wherein said method is sufficient to provide a chemically-mechanically polished memory device substrate surface wherein any microscratch thereon produced during the chemical-mechanical polishing is less than about 20 Angstroms in depth. 69. The method of claim 62, wherein substrate is a silicon substrate, a gallium arsenide (GaAs) substrate, a thin film transistor-liquid crystal display glass substrate, or a Micro Electro Mechanical Systems structure, wherein said method is sufficient to provide a chemically-mechanically polished substrate surface wherein any microscratch thereon produced during the chemical-mechanical polishing is less than about 20 Angstroms in depth. 70. The method of claim 62, wherein at least one portion of the particles in the composition are recovered from used CMP slurries after polishing and are re-used to polish another substrate surface. 71. The method of claim 70, wherein the at least one portion of the recovered particles are recovered by filtration, centrifugation, or a combination thereof. 72. The method of claim 61, wherein the polishing involves movably contacting the feature or the composition with a polishing pad, wherein said polishing pad has a surface and comprises an activator associated with said polishing pad surface. 73. The method of claim 61, wherein the activator does not require actinic energy and is not exposed to activating actinic energy. 74. A method of polishing a substrate surface having at least one feature thereon comprising a metal, which method comprises: providing the composition of claim 3, wherein the activator does not require actinic energy; and chemically mechanically polishing the feature by contacting the feature with the composition, wherein the composition is not exposed to activating actinic energy, wherein performing the polishing process will not create defects or nonuniformity such that the substrate can not undergo further fabrication to become a finished operable product. 75. The method of claim 74, wherein the activator is a dissociable salt of iron present in an amount between about 5 ppm and about 200 ppm. 76. A method of polishing a substrate surface having at least one feature thereon comprising a metal, which method comprises: providing the composition of claim 2, ;and chemically mechanically polishing the feature by contacting the feature with the composition, wherein performing the polishing process will not create defects or nonuniformity such that the substrate can not undergo further fabrication to become a finished operable product. 77. The method of claim 61, wherein the activator comprises iron ions associated with the surface, and the amount of activator iron is between about 2 ppm to 500 ppm based on the weight of the slurry. 78. The method of claim 61, wherein the activator comprises iron ions associated with the surface, and the amount of activator iron is between about 3 ppm to 100 ppm based on the weight of the slurry. 79. The method of claim 61, wherein the activator comprises iron ions associated with the surface, and the amount of activator iron is between about 4 ppm to 20 ppm based on the weight of the slurry. 80. A method of polishing a substrate surface consisting essentially of: providing the composition of claim 1 disposed between the substrate surface and a polishing pad, wherein the polishing pad exerts a force toward the substrate surface; and movably contacting the substrate surface with the polishing pad and composition disposed between the polishing pad and the substrate surface. 81. A method of polishing a substrate surface consisting essentially of: providing the composition of claim 2 disposed between the substrate surface and a polishing pad, wherein the polishing pad exerts a force toward the substrate surface; and movably contacting the substrate surface with the polishing pad and composition disposed between the polishing pad and the substrate surface. 82. A method of polishing a substrate surface consisting essentially of: providing the composition of claim 3 disposed between the substrate surface and a polishing pad, wherein the polishing pad exerts a force toward the substrate surface; and movably contacting the substrate surface with the polishing pad and composition disposed between the polishing pad and the substrate surface. 83. The composition for chemical-mechanical polishing of claim 1, wherein a plurality of particles having a surface and having at least one activator associated with the surface have been contacted with one or more of acids, chelators, or both, wherein the amount of activator associated with the surface of the particle is less than the amount of activator associated with the surface of the particle prior to said contact with one or more of acids, chelators, or both. 84. The composition for chemical-mechanical polishing of claim 3, wherein a plurality of particles having a surface and having at least one activator associated with the surface have been contacted with one or more of acids, chelators, or both, wherein the amount of activator associated with the surface of the particle is less than the amount of activator associated with the surface of the particle prior to said contact with one or more of acids, chelators, or both. 85. The composition of claim 1 further comprising between 0. 001 to about 1 weight percent of a stabilizer selected from vitamin B, vitamin C, and citric acid. 86. The composition of claim 1 further comprising between 0. 001 to about 1 weight percent of a stabilizer selected from vitamin B, vitamin C, and citric acid.
연구과제 타임라인
LOADING...
LOADING...
LOADING...
LOADING...
LOADING...
이 특허에 인용된 특허 (8)
Brian L. Mueller ; Shumin Wang, CMP polishing pad including a solid catalyst.
Yoshikazu Nishii JP; Nobuhiro Maeda JP; Shin-ichi Ogawa JP; Yoichi Hachitani JP; Masayuki Higashida JP; Itaru Watanabe JP, Glass material for carrying a photocatalyst, filter device using the same and light irradiating method.
Small Robert James ; Peterson Maria Louise ; Troung Tuan ; Bonneau Lionel,FRX ; Drouget Jean Claude,FRX, Slurry composition and method of chemical mechanical polishing using same.
Bateman, Stuart Arthur; Simons, Ranya; Wu, Dong Yang; McMahon, Patrick James; Bilyk, Alexander; Berry, Douglas H.; Kobak, Seana B.; Kirchner, James F.; Straus, Lori Clarice; Johnson, Mark Paul, Activation method using modifying agent.
De Rege Thesauro, Francesco; Grumbine, Steven; Carter, Phillip; Li, Shoutian; Zhang, Jian; Schroeder, David; Tsai, Ming-Shih, Compositions and methods for CMP of semiconductor materials.
Siddiqui, Junaid Ahmed; Small, Robert J.; Castillo, Daniel Hernandez, Free radical-forming activator attached to solid and used to enhance CMP formulations.
Zhou, Hongjun; Shi, Xiaobo; Schwartz, Jo-Ann Theresa, Metal compound chemically anchored colloidal particles and methods of production and use thereof.
Siddiqui, Junaid Ahmed; Compton, Timothy Frederick; Richards, Robin Edward, Method for immobilizing ligands and organometallic compounds on silica surface, and their application in chemical mechanical planarization.
Lianto, Prayudi; Hsiung, Kuma; Bergman, Eric J.; Klocke, John L.; Rafi, Mohamed; Azim, Muhammad; See, Guan Huei; Sundarrajan, Arvind, Methods for chemical mechanical polishing (CMP) processing with ozone.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.