Process for manufacturing a substrate and associated substrate
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
H01L-021/46
H01L-021/02
H01L-021/30
출원번호
US-0972158
(2004-10-22)
우선권정보
FR-02 05423(2002-04-03)
발명자
/ 주소
Rayssac,Olivier
Letertre,Fabrice
출원인 / 주소
S.O.I.Tec Silicon on Insulator Technologies S.A.
대리인 / 주소
Winston &
인용정보
피인용 횟수 :
3인용 특허 :
7
초록▼
A process for producing a substrate is described. The process includes providing an assembly having a first layer weakly bonded to a temporary support at an interface therebetween. At least a portion of the first layer is selectively etched substantially to the interface to create an etched zone. A
A process for producing a substrate is described. The process includes providing an assembly having a first layer weakly bonded to a temporary support at an interface therebetween. At least a portion of the first layer is selectively etched substantially to the interface to create an etched zone. A second layer is then bonded to un-etched portions of the first layer to cover the etched zone and to form a closed cavity. The first layer is detached from the temporary support at the weak bond by providing a raised pressure in the cavity.
대표청구항▼
What is claimed is: 1. A process for producing a substrate, comprising: providing an assembly including a first layer weakly bonded to a temporary support at an interface therebetween, wherein a weak bond having a bond energy that is less than about 1 joule/m2 is provided at the interface between t
What is claimed is: 1. A process for producing a substrate, comprising: providing an assembly including a first layer weakly bonded to a temporary support at an interface therebetween, wherein a weak bond having a bond energy that is less than about 1 joule/m2 is provided at the interface between the first layer and temporary support; selectively etching the first layer substantially to the interface without damaging the temporary support to create an etched zone; bonding a second layer to un-etched portions of the first layer to cover the etched zone and form a closed cavity; and detaching the first layer from the temporary support at the weak bond by providing a raised pressure in the cavity. 2. The process of claim 1 which further comprises selectively etching portions of the first layer substantially to the interface to create a pattern of etched zones; bonding the second layer to the un-etched portions of the first layer to cover the etched zones and form a plurality of closed cavities; and detaching the first layer from the temporary support at the weak bond by providing raised pressures in the cavities. 3. The process of claim 2, which further comprises providing substantially uniformly raised pressure in the cavities over the entire substrate. 4. The process of claim 2, which further comprises raising the pressure in the cavities in a non-uniform manner over the substrate. 5. The process of claim 4, which further comprises raising the pressure to a greater extent in the cavities that are located near the substrate periphery. 6. The process of claim 2, wherein the etching comprises forming a pattern of elongated cavities in the first layer. 7. The process of claim 6, wherein the cavities are evenly distributed over at least part of the substrate. 8. The process of claim 7, wherein the cavities are evenly distributed over the entire substrate. 9. The process of claim 6, wherein at least certain cavities form channels which communicate with one another. 10. The process of claim 2, wherein the cavities are insulated from each other. 11. The process of claim 1, wherein the cavity contains a gas and the pressure is raised by raising the pressure of the gas. 12. The process of claim 1, wherein the cavity contains a gas and the pressure is raised by raising the temperature of the gas. 13. The process of claim 1, which further comprises depositing at least part of the first layer directly upon the temporary support. 14. The process of claim 13, wherein the first layer comprises a thin growth layer and the deposited first layer, and wherein the weak bond is created between the temporary support and the thin growth layer. 15. The process of claim 1, wherein the thin growth layer is attached to the temporary support by layer transfer from a donor substrate. 16. The process of claim 15, wherein the weak bond is created by limiting the adhesive energy between the thin transferred layer and the temporary support. 17. The process of claim 1, wherein the second layer comprises a mechanical support for the first layer. 18. The process of claim 1, wherein a material of the first layer and an adjacent material of the temporary support exhibit sufficiently different thermal dilatation coefficients such that a rise in temperature causes shearing at an interface between the first layer and the temporally support. 19. The process of claim 18, wherein the first and second layers are made of materials that exhibit sufficiently close thermal dilatation coefficients such that the rise in temperature does not cause any degradation of adhesion between the materials or layers. 20. The process of claim 1, wherein the second layer is bonded onto the first layer by sealing. 21. The process of claim 1, wherein the material of the second layer is quartz. 22. The process of claim 21, wherein the material of the first layer is at least one of a mono-or poly-metallic nitride. 23. A substrate for producing micro-electronics, optoelectronics or optics components, comprising: a first layer wherein the material of the first layer is at least one of a mono-or poly-metallic nitride; a temporary support weakly bonded to the first layer at an interface therebetween, wherein a weak bond having a bond energy that is less than about 1 joule/m2 is provided at the interface between the first layer and temporary support; at least one cavity formed in the first layer substantially to the interface; and a second layer bonded to the first layer and covering the at least one cavity such that a raised pressure can be generated within the at least one cavity to detach the first layer from the temporary support at the weak bond. 24. The substrate of claim 23, wherein the first layer includes a plurality of cavities, and the second layer is bonded to the first layer to cover the cavities. 25. The substrate of claim 24, further comprising a pattern of evenly distributed cavities. 26. The substrate of claim 25, wherein the cavities are separated from one another. 27. The substrate of claim 25, wherein at least certain cavities form channels which communicate with one another. 28. The substrate of claim 23, wherein the at least one cavity has an elongated shape. 29. The substrate of claim 23, wherein the weak bond is present between the temporary support and a thin growth layer. 30. The substrate of claim 23, wherein the first layer and temporary support are made of materials that exhibit sufficiently different thermal dilatation coefficients such that an increase in temperature causes shearing at the interface between the first layer and the temporary support.
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이 특허에 인용된 특허 (7)
Chen Yong ; Wang Shih-Yuan, Method for detaching an epitaxial layer from one substrate and transferring it to another substrate.
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