초록 ▼

Disclosed is a method for fabricating a semiconductor device by using a PECYCLE-CVD process. The method includes the steps of feeding source gas into a process chamber for predetermined time within one cycle, allowing reaction gas to flow in the process chamber at least until a plasma reaction is fi

Disclosed is a method for fabricating a semiconductor device by using a PECYCLE-CVD process. The method includes the steps of feeding source gas into a process chamber for predetermined time within one cycle, allowing reaction gas to flow in the process chamber at least until a plasma reaction is finished in the process chamber and feeding purge gas into the process chamber for a predetermined time within one cycle, thereby purging residual products remaining in the process chamber after source gas is reacted, forming plasma in the process chamber for a predetermined time within one cycle so as to allow reaction gas to react with plasma, thereby depositing a thin film on a wafer, and feeding purge gas into the process chamber for a predetermined time within one cycle, thereby purging residual products remaining in the process chamber after reaction gas is reacted. Superior step-coverage and uniformity of the thin film are achieved while depositing the thin film at a higher speed.

대표청구항 ▼

What is claimed is: 1. A method for fabricating a semiconductor device by using a PECYCLE-CVD process, the method comprising the steps of: i) feeding source gas into a process chamber for predetermined time within one cycle; ii) allowing reaction gas to flow in the process chamber at least until a

What is claimed is: 1. A method for fabricating a semiconductor device by using a PECYCLE-CVD process, the method comprising the steps of: i) feeding source gas into a process chamber for predetermined time within one cycle; ii) allowing reaction gas to flow in the process chamber at least until a plasma reaction is finished in the process chamber and feeding purge gas into the process chamber for a predetermined time within one cycle, thereby purging residual products remaining in the process chamber after source gas is reacted; iii) forming plasma in the process chamber for a predetermined time within one cycle so as to allow reaction gas to react with plasma, thereby depositing a thin film on a wafer; and iv) feeding purge gas into the process chamber for a predetermined time within one cycle, thereby purging residual products remaining in the process chamber after reaction gas is reacted. 2. The method as claimed in claim 1, wherein reaction gas is continuously fed into the process chamber while one cycle is being carried out. 3. The method as claimed in claim 1, wherein source gas is one selected from the group consisting of Ta2O5, Al 2O, HfO2, Ru, BST, SB, Pt, TiN, Ti, and TiO2. 4. The method as claimed in claim 1, wherein reaction gas includes at least one selected from the group consisting of N2, O2, H2, NH3, N2O, cyclo-alkane such as CxH(2x), and gas such as CxH(2x+2), in which at least a part of alkane is replaced with F or Cl. 5. The method as claimed in claim 1, wherein inert gas selected from the group consisting of He, Ne, Ar, Xe, and Kr is added to the reaction gas. 6. The method as claimed in claim 1, wherein plasma power is adjusted below 1000 W when forming plasma. 7. The method as claimed in claim 1, wherein, when forming the thin film, pressure of the process chamber is below atmospheric pressure, a substrate temperature is about 50 to 800째 C., and a plasma reaction time is set in a range about 0.01 to 180 seconds. 8. The method as claimed in claim 1, wherein, when forming the thin film, a purge time for purging source gas or reaction gas is set within 60 seconds. 9. The method as claimed in claim 1, wherein the thin film includes a Mo source thin film.