IPC분류정보
| 국가/구분 |
United States(US) Patent
등록
|
| 국제특허분류(IPC7판) |
|
| 출원번호 |
US-0080485
(2005-03-16)
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| 우선권정보 |
JP-2000-321171(2000-10-20) |
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발명자
/ 주소 |
- Kamiguchi,Yuuzo
- Yuasa,Hiromi
- Nagata,Tomohiko
- Yoda,Hiroaki
- Koui,Katsuhiko
- Yoshikawa,Masatoshi
- Iwasaki,Hitoshi
- Sahashi,Masashi
- Takagishi,Masayuki
|
| 출원인 / 주소 |
|
| 대리인 / 주소 |
Oblon, Spivak, McClelland, Maier &
|
| 인용정보 |
피인용 횟수 :
33 인용 특허 :
11 |
초록
▼
There is provided a practical magnetoresistance effect element which has an appropriate value of resistance, which can be sensitized and which has a small number of magnetic layers to be controlled, and a magnetic head and magnetic recording and/or reproducing system using the same. In a magnetoresi
There is provided a practical magnetoresistance effect element which has an appropriate value of resistance, which can be sensitized and which has a small number of magnetic layers to be controlled, and a magnetic head and magnetic recording and/or reproducing system using the same. In a magnetoresistance effect element wherein a sense current is caused to flow in a direction perpendicular to the plane of the film, a resistance regulating layer is provided in at least one of a pinned layer, a free layer and an non-magnetic intermediate layer. The resistance regulating layer contains, as a principal component, an oxide, a nitride, a fluoride, a carbide or a boride. The resistance regulating layer may be a continuous film or may have pin holes. Thus, it is possible to provide a practical magnetoresistance effect element which has an appropriate value of resistance, which can be sensitized and which has a small number of magnetic layers, while effectively utilizing the scattering effect depending on spin.
대표청구항
▼
What is claimed is: 1. A magnetoresistance effect element comprising: a magnetoresistance effect film including a magnetization fixed layer having a ferromagnetic film in which the direction of magnetization is substantially fixed to one direction, a magnetization free layer having a ferromagnetic
What is claimed is: 1. A magnetoresistance effect element comprising: a magnetoresistance effect film including a magnetization fixed layer having a ferromagnetic film in which the direction of magnetization is substantially fixed to one direction, a magnetization free layer having a ferromagnetic film in which the direction of magnetization varies in response to an external magnetic field, and a non-magnetic intermediate layer provided between the magnetization fixed layer and the magnetization free layer; a pair of electrodes which are electrically connected to the magnetoresistance effect film and configured to apply a current in a direction perpendicular to the plane of the magnetoresistance effect film; and a resistance regulating layer containing an oxide, a nitride, a fluoride, a carbide or a boride and having a hole or holes provided with metal therein; the resistance regulating layer formed in the non-magnetic intermediate layer or on the interface between the non-magnetic intermediate layer and at least one of the magnetization fixed layer and the magnetization free layer, two adjacent layers which contact the resistance regulating layer having an electric conduction substantially limited to conduction through the hole or the holes of the resistance regulating layer, and the ferromagnetic film of at least one of the magnetization fixed layer and the magnetization free layer comprising at least a first magnetic layer formed of Fe or an Fe base alloy. 2. A magnetoresistance effect, element as set forth in claim 1, wherein the ferromagnetic film of the at least one of the magnetization fixed layer and the magnetization free layer further comprises a second magnetic layer having a composition different from that of the first magnetic layer formed of Fe or the Fe base alloy and the second magnetic layer and the first magnetic layer are stacked. 3. A magnetoresistance effect element as set forth in claim 1, wherein the ferromagnetic film of the at least one of the magnetization fixed layer and the magnetization free layer further comprises a second magnetic layer of a Co--Fe alloy or a Ni--Fe alloy, and the second magnetic layer and the first magnetic layer formed of Fe or the Fe base alloy are stacked. 4. A magnetoresistance effect element as set forth in claim 1, wherein the ferromagnetic film of the magnetization fixed layer only comprises the first magnetic layer formed of Fe or the Fe base alloy and the magnetization free layer comprises a Co base alloy layer, a Ni base alloy layer, or a stacked structure of a Co base alloy layer and an Ni base alloy layer. 5. A magnetoresistance effect element as set forth in claim 1, wherein each of the ferromagnetic films of the magnetization fixed layer and the magnetization free layer comprises the first magnetic layer formed of Fe or the Fe base alloy, and the ferromagnetic film of the magnetization free layer further comprises one of a Co base alloy layer, an Ni base alloy layer, and a stacked structure of a Co base alloy layer and an Ni base alloy layer, which is stacked with the first magnetic layer formed of Fe or the Fe base alloy. 6. A magnetoresistance effect element as set forth in claim 1, wherein the first magnetic layer formed of Fe or the Fe base alloy has a body-centered cubic structure. 7. A magnetoresistance effect element as set forth in claim 6, wherein the ferromagnetic film of the magnetization fixed layer only comprises the first magnetic layer formed of Fe or the Fe base alloy having the body-centered cubic structure and the ferromagnetic film of the magnetization free layer comprises a second magnetic layer of a face-centered cubic structure. 8. A magnetoresistance effect element as set forth in claim 6, wherein each of the ferromagnetic films of the magnetization fixed layer and the magnetization free layer comprises the first magnetic layer formed of Fe or the Fe base alloy having the body-centered cubic structure and the magnetization free layer further comprises a second magnetic layer of a face-centered cubic structure which is stacked on the first magnetic layer. 9. A magnetoresistance effect element as set forth in claim 8, wherein the first magnetic layer formed of Fe or the Fe base alloy having the body-centered cubic structure of the magnetization free layer has a film thickness of 2 nm or less. 10. A magnetoresistance effect element as set forth in claim 1, wherein the first magnetic layer is formed of the Fe base alloy and the Fe base alloy contains at least one selected from the group consisting of FeNi, FeCo, FeSi, FeMo, and FeAl.
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