초록 ▼

According to the present invention, by applying a basic surface-processing agent to a film underlying a resist, the excessive photoacid present at the interface between the resist and the front-end film is neutralized and the pattern shape can be controlled. The present invention provides a method o

According to the present invention, by applying a basic surface-processing agent to a film underlying a resist, the excessive photoacid present at the interface between the resist and the front-end film is neutralized and the pattern shape can be controlled. The present invention provides a method of manufacturing a semiconductor device including the steps of, forming an insulating film on a surface, applying a surface processing agent containing of at least a solvent and a basic component on the insulating film, applying a resist on the insulating film thus applied with the surface processing agent, patterning the resist by lithography, and transferring a resist pattern to the insulating film by a dry etching process.

대표청구항 ▼

What is claimed is: 1. A method of fabricating a semiconductor device comprising the steps of: forming an insulating film on a surface; applying a surface processing agent on said insulating film, said surface processing agent containing at least a solvent and a basic component; applying a resist o

What is claimed is: 1. A method of fabricating a semiconductor device comprising the steps of: forming an insulating film on a surface; applying a surface processing agent on said insulating film, said surface processing agent containing at least a solvent and a basic component; applying a resist on said insulating film applied with said substrate-surface surface processing agent; patterning said resist by lithography to form a resist pattern; and patterning said insulating film by the dry etching process while using said resist pattern as a mask, wherein said surface processing agent neutralizes photoacids released from said resist or said insulating film, thereby effectively suppressing defective patterning at the interface of said insulating film and resist interface. 2. The method as claimed in 1, wherein said surface processing agent contains said solvent with a proportion of 90 to 99.99% and said basic component with a proportion of 0.01 to 10%. 3. The method as claimed in 1, wherein said solvent comprises a mixed solution of PGMEA (propylene glycol monomethyl ether acetate) and PGME (propylene glycol monomethyl ether). 4. The method as claimed in 1, wherein said basic component comprises any of an organic amine and an ammonium salt. 5. The method as claimed in 1, wherein said basic component includes a compound represented by a formula 6. The method as claimed in 1, wherein said basic component has a strength of a base that neutralizes photoacids released from said resist or said insulating film. 7. The method as claimed in 1, wherein said step of applying said surface processing agent and said step of applying said resist are conducted in continuation. 8. The method as claimed in 1, wherein said resist is a chemical amplification resist. 9. The method as claimed in 1, wherein said insulating film is added with a photoacid generator. 10. The method as claimed in 1, wherein said insulating film is formed by a spin-on method. 11. The method as claimed in 1, wherein said dry etching process is conducted by using a gas containing a fluorine compound as an etching gas. 12. The method as claimed in 1, wherein said insulating film forms a pattern as a result of said dry etching process, and wherein said pattern is transferred onto another insulating film formed between said surface and said insulating film by another dry etching process. 13. The method as claimed in 12, wherein said another insulating film is a polymer film. 14. The method as claimed in 13, wherein said polymer is a novolac resin film. 15. The method as claimed in 1, wherein said another dry etching process uses a gas containing hydrogen and oxygen as an etching gas. 16. The method as claimed in 12, wherein said another insulating film forms another pattern as a result of said another dry etching process, and wherein said another pattern is transferred onto a further insulating film formed under said another insulating film between said surface and said another insulating film by conducting a further dry etching process. 17. The method as claimed in 16, wherein said further insulating film comprises a silicon compound film. 18. The method as claimed in 17, wherein said silicon compound film is a silicon oxide film.